Kohei Fujii

Single supply 1W Ku-band Power Amplifier Based on 0.25μm E-mode PHEMT

Development of enhancement mode PHEMT (E-PHEMT), single supply, 13 to 17GHz power amplifier MMIC is described. The amplifier was designed with highly integrated lumped-passive based design techniques utilizing a 0.25mum GaAs E-PHEMT production process. The designed power amplifier exhibit 30 dB of small signal gain, 31dBm 1dB gain compression output power with 31% PAE at 16 GHz. This MMIC was fabricated in Avagos advanced E-PHEMT process and have been demonstrated in fully production capability

An Integrated Low Noise Amplifier and Image-rejection Mixer in a Surface Mount Package for Low Cost 10-22 GHz Applications

A novel integrated low noise amplifier and image-rejection distributed mixer has been demonstrated. The 10 to 22 GHz wideband configuration requires no filtering yet delivers 2.3 dB of NF and 15 dB conversion gain. The LNA/IRM have been integrated onto a single GaAs MMIC chip and then packaged into a low cost 5times5mm surface mount package

0.15uM Y-Gate pHEMT Process Using Deep-UV Phase-Shift Lithography

An AlGaAs/InGaAs pHEMT process employing Deep-UV Phase-Shift lithography to create 0.15uM Y-shape gates has been developed and released to manufacturing. The gate formation process has high throughput and low cost compared to E-beam lithography and excellent process control has been achieved. Typical Fet characteristics are: peak fT=86Ghz, Vp=-1.0V, Gmmax=520mS/mm, Imax=575mA/mm, and BVdg=14 volts. A 9-section traveling wave amplifier (TWA) with 10dB gain up to 88 Ghz has been manufactured in this process.

Constant Linearity Variable Gain Traveling Wave Amplifier MMIC for 1 to 26.5 GHz Applications

This paper describes the design and test results of a constant linearity variable gain traveling wave amplifier (VGTWA) suitable for 1 to 26.5GHz applications. The constant linearity VGTWA consists of variable feedback cascode stages, input artificial transmission line, output artificial transmission line, and a drain DC biasing network. The VGTWA was fabricated by the Avagos 0.25mum enhancement mode PHEMT process thus requires only a positive supply for bias and control. The constant linearity VGTWA exhibits 9 +/- 2 dB of maximum small signal gain between 1 and 26.5GHz frequencies with 15dB gain control. The TGTWA exhibits 14dBm minimum output 3rd order intercept point over the gain controlling range. The VGTWA also exhibits constant input/output return losses over the gain controlling conditions