Henrik Morkner

An integrated FBAR filter and PHEMT switched-amp for wireless applications

Amplifiers and filters must work together in modern wireless systems. Traditional technology does not allow these two functions to be combined effectively. However, this paper demonstrates that the technology does exist to integrate filters and amplifiers into one small package. This paper demonstrates that two switched-amplifiers and a FBAR filter can be integrated into a small glass metal SO-8 package. The combination provides 23 dB gain over a 100 MHz bandwidth, 35 dB rejection out of band. This is the only integrated FBAR filter with dual amplifier known to the authors to ever be reported.

Ka-band 2W and 4W MMIC Power Amplifiers In 7×7mm Low-cost SMT Package

This paper describes the design and usage of 2 W and 4 W SMT packaged high power amplifiers (HPA) suitable for low cost sub mm-wave applications. The development of PHEMT HPA MMICs are described. The designed 2 W and 4 W power amplifiers exhibit 20 dB of small signal gain, 33 dBm and 35 dBm 1 dB gain compression output power respectively in between 24 and 31 GHz frequency range. Those MMIC PAs were assembled in 7 x 7 mm low cost SMT packages, and obtained nearly identical RF performances as the die parts.

A novel 3 V, 7 mA PHEMT GaAs active MMIC mixer/LNA for wireless applications

A novel monolithic integrated active mixer/LNA utilizing advanced pseudomorphic GaAs FETs has been developed for a mobile wireless receiver. RF coverage is 900 MHz to 2400 MHz. The mixer/LNA operates on a single 3 volt supply at 7 mA. The mixer provides 4 dB conversion gain with a -10 dBm LO drive. The LNA provides a 1.6 dB noise figure and 14 dB gain. The die is small and packaged in the SSOP-16 plastic package to keep costs low. This is the only GaAs PHEMT active mixer/LNA known to provide such performance from such a small DC requirement.

6-24 GHz Mixer Using 0.25 μm Enhancement Mode PHEMT Technology in a Low Cost Chip Scale Package

This paper discusses development of a 6-24 GHz mixer in a novel chip scale package. The mixer and package was fabricated together using Avagos enhancement mode (E-mode) PHEMT technology. This chip scale package is high performance, low cost and it totally eliminates all the assembly steps (such as die attach, bond wire etc) required to package a singulated die in a package. The mixer has been tested at two different stages of fabrication, first Un-Capped (like without top-lid in case of conventional package) and after final GaAs-Capped (with top-lid on). The measured conversion loss of un-capped mixer is ~9 dB upto 22 GHz @LO=+16 dBm. Conversion loss of capped wafer is marginally lower than uncapped mixer upto 22 GHz. The IIP3 of uncapped mixer mixer is about +19 dBm and capped mixer IIP3 is about 1-2 dB lower than Capped mixer in most of the band. Rest of the performances of (Capped and Un-capped) mixers are very similar. L-R Isolation ~35 dB, L-I Isolation ~40 dB. IF test frequency is 2 GHz. To the best of authors knowledge this is the first reported chip scale packaged Mixer.

A novel integrated microwave bias network for low cost multistage amplifiers

A novel MMIC bias network topology utilizing FETs has been developed. The bias network is very compact, providing low DC path loss with high, broad band RF isolation. This bias network consists of two FETs and a capacitor, and is implemented with pseudomorphic HEMT. The bias network is useful in multi-stage amplifiers where stage-to-stage RF isolation is critical to system stability and performance. A VGA (variable gain amplifier) is shown with measured results as a application example of the bias network. There is no other known published information or patents on this bias network topology.

A Complete Antenna-to-CMOS 4×6mm Front End Module for Dual Band 802.11abgn WLAN

A complete antenna-to-CMOS FEM (front end module) is described. Its simple assembly belies the high integration level of diplexer, switches, LNAs, linear PAs, load insensitive power detection, baluns, post and pre filtering. The active components are based on enhancement mode PHEMT while filtering and 4 times 6 mm substrate are in plastic encapsulated LTCC. The FEMS covers 802.11 abgn 2.4 GHz and 5-6 GHz bands. The receiver gives 10 dB and 4.9 dB total gain and NF at 10 mA in band. The transmitter gives 22 dB gain and 17dBm power out while less than -22 dB EVM at 165 mA and meeting spectral emission masking. Above data includes all diplexer, baluns, and filtering, directional couplers, referenced power detection, DC chokes and bypassing, and CMOS compatible logic for power down and linearity mode select. The final FEM has only 2 MMICs and a substrate to give this solution high reliability and low cost.