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Featured researches published by Koji Hotta.


international symposium on power semiconductor devices and ic's | 2006

Mechanical stress dependence of power device electrical characteristics

H. Tanaka; Koji Hotta; Satoshi Kuwano; M. Usui; Masayasu Ishiko

This paper describes how mechanical stress affects the electrical characteristics of a power device, depending on the surface structure of the device or the device type. Experimental results show that devices in which the current flow direction is vertical to the substrate, such as trench structure devices, are affected the least by mechanical stress


Microelectronics Reliability | 2005

Effects of uni-axial mechanical stress on IGBT characteristics

Masanori Usui; Masayasu Ishiko; Koji Hotta; Satoshi Kuwano; Masato Hashimoto

This paper describes the impacts of mechanical stress on vertical power devices. The stress dependence of the DC characteristics of trench insulated gate bipolar transistors (IGBTs) was measured. The experimental results could be reproduced by the device simulation, which included stress dependence models of the carrier mobility and the band gap. We found that the stress dependence of the on-state voltage mainly arose from the MOSFET portion of the IGBT. Using the device simulation, we estimated the effects of mechanical stress on the surge voltage and the saturation current, which give us the important information for designing a power module with higher ruggedness.


power electronics specialists conference | 2004

An abnormal turn-off surge suppression concept for PT-IGBTs at high voltage operation

Koji Hotta; Takeshi Fukami; Kimimori Hamada; Takahide Sugiyama; Masayasu Ishiko

In this paper, we investigate the turn-off surge behavior of PT-IGBTs, and in particular, abnormal increases in surge voltage appearing at high voltage conditions, which are required for a hybrid vehicle with a more powerful motor output. Simulation and experimental results showed that the abnormal surge voltage can be suppressed by increase of an extra-carrier at the interface between the n-drift and n+buffer layers, because the abnormal phenomenon resulted from depletion of the accumulated carrier during the turn-off period. This countermeasure is achieved by designing the PT-IGBT as the increase of the extra-carrier at the interface during the turn-off period. This allows reduction of the surge voltage, and thereby makes it possible to use the device for higher voltage operation over 600 V, such as in hybrid vehicle application, and consequently, to increase the motor power of the hybrid vehicle without sacrificing reliability and cost.


Archive | 2004

Trench gate field effect devices

Koji Hotta; Sachiko Kawaji; Takahide Sugiyama; Masanori Usui


Archive | 2012

Vehicular instrument-mounting structure

Koji Hotta; Kenshi Yamanaka; Yutaka Hotta


Archive | 2012

Vehicle equipment mounting structure

Koji Hotta; Kenshi Yamanaka; Yutaka Hotta


Microelectronics Reliability | 2004

Investigation of IGBT turn-on failure under high applied voltage operation

Masayasu Ishiko; Koji Hotta; Sachiko Kawaji; Takahide Sugiyama; Tomoyuki Shouji; Takeshi Fukami; Kimimori Hamada


Archive | 2011

Automobile with vehicle drive motor

Koji Hotta; Kenshi Yamanaka


Archive | 2006

Semiconductor devices with electric current detecting structure

Koji Hotta


Archive | 2014

Current sensor, power converter

Koji Hotta

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