Koji Moriya

43.4: Low Power LC Display Using In-Ga-Zn-Oxide TFTs Based on Variable Frame Frequency

By using an oxide semiconductor, we successfully prototyped a 3.4-inch QHD LCD panel including data and scan drivers; their power consumption is reduced by variable frame frequency (from 1/60 fps to 120 fps) depending on images. Low frame frequency in displaying still images on a PC monitor can reduce eyestrain.

50.2: High Reliable In-Ga-Zn-Oxide FET Based Electronic Global Shutter Sensors for In-Cell Optical Touch Screens and Image Sensors

A 6 inch XGA LCD touch screen with optical sensors in its pixels, using oxide semiconductor (OS) FETs has been developed. The extremely low off-state current of the OS FET facilitates the use of a global shutter and leads to an improved accuracy of touch detection. The possibility of a novel application of a touch screen and an image sensor that is an application of the combination of OS FETs and global shutter is proposed.

P‐143: Possibility of Reflective LC Display Using Oxide Semiconductor TFTs as Electronic Paper Display

We successfully prototyped a 3.4-inch QHD PDLCD panel integrally including data and scan drivers of oxide semiconductor TFTs and capable of displaying still images at 0.2 fps, which can be adopted to electronic paper displays. This panel can display both still images and moving images and reduce power consumption.

76.1: High Aperture Ratio LCD Display using In-Ga-Zn-Oxide TFTs without Storage Capacitor

By using oxide semiconductors, we succeeded in prototyping a 3.4-inch QHD LCD panel whose aperture ratio is high and pixels do not include a storage capacitor. The aperture ratio is increased from 40 % to 59%, resulting in reduction of power consumption in a backlight unit.