Konstantinos Ntetsikas

Universal pattern transfer methods for metal nanostructures by block copolymer lithography

A universal block copolymer pattern transfer method was demonstrated to produce Co nanostructures consisting of arrays of lines or dots from a polystyrene-block-polydimethylsiloxane (PS-b-PDMS) diblock copolymer. Three processes were used: liftoff, a damascene process, and ion beam etching using a hard mask of tungsten, including a sacrificial poly(methyl methacrylate) layer under the PS-b-PDMS for the etch and liftoff processes. The ion beam etch process produced the most uniform magnetic arrays. A structural and magnetic comparison in terms of uniformity, edge roughness and switching field distribution has been reported.

Morphology, directed self-assembly and pattern transfer from a high molecular weight polystyrene-block-poly(dimethylsiloxane) block copolymer film

The self-assembly of block copolymers with large feature sizes is inherently challenging as the large kinetic barrier arising from chain entanglement of high molecular weight (MW) polymers limits the extent over which long-range ordered microdomains can be achieved. Here, we illustrate the evolution of thin film morphology from a diblock copolymer of polystyrene-block-poly(dimethylsiloxane) exhibiting total number average MW of 123 kg mol-1, and demonstrate the formation of layers of well-ordered cylindrical microdomains under appropriate conditions of binary solvent mix ratio, commensurate film thickness, and solvent vapor annealing time. Directed self-assembly of the block copolymer within lithographically patterned trenches occurs with alignment of cylinders parallel to the sidewalls. Fabrication of ordered cobalt nanowire arrays by pattern transfer was also implemented, and their magnetic properties and domain wall behavior were characterized.

Failure behavior after stepwise uniaxial extension of entangled polymer melts

This work studies how stepwise extension of various well-entangled polymer melts produce mechanical/structural breakdowns during stress relaxation. Depending on how stepwise extension is imposed on five different styrene-butadiene random copolymers, two different forms of specimen failure are observed. When a step extension is produced with a low Hencky rate or to a low strain below some thresholds, the sample breaks up rather sharply after an appreciable period of induction during which the stress relaxes quiescently. After step extension, the sample draws and undergoes unsustainable necking due to shear yielding, if the step extension is produced with a Hencky rate higher than the Rouse relaxation rate and the magnitude is beyond a Hencky strain of 1.5. Moreover, introduction of long-chain branching suppresses the elastic breakup, postponing it to Hencky strains beyond 2.5. The clearly identifiable characteristics of the elastic yielding may be understood in terms of some speculative interpretations. More convincing explanations have yet to come from future computer experiments that hopefully the present work is able to motivate.

Nanopatterning via Self-Assembly of a Lamellar-Forming Polystyrene-block-Poly(dimethylsiloxane) Diblock Copolymer on Topographical Substrates Fabricated by Nanoimprint Lithography

The self-assembly of a lamellar-forming polystyrene-block-poly(dimethylsiloxane) (PS-b-PDMS) diblock copolymer (DBCP) was studied herein for surface nanopatterning. The DBCP was synthesized by sequential living anionic polymerization of styrene and hexamethylcyclotrisiloxane (D3). The number average molecular weight (Mn), polydispersity index (Mw/Mn) and PS volume fraction (φps) of the DBCP were MnPS = 23.0 kg mol−1, MnPDMS = 15.0 kg mol−1, Mw/Mn = 1.06 and φps = 0.6. Thin films of the DBCP were cast and solvent annealed on topographically patterned polyhedral oligomeric silsesquioxane (POSS) substrates. The lamellae repeat distance or pitch (λL) and the width of the PDMS features (dL) are ~35 nm and ~17 nm, respectively, as determined by SEM. The chemistry of the POSS substrates was tuned, and the effects on the self-assembly of the DBCP noted. The PDMS nanopatterns were used as etching mask in order to transfer the DBCP pattern to underlying silicon substrate by a complex plasma etch process yielding sub-15 nm silicon features.

Magnetic reversal and thermal stability of CoFeB perpendicular magnetic tunnel junction arrays patterned by block copolymer lithography

Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First-order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

Anionic Polymerization of Styrene and 1,3-Butadiene in the Presence of Phosphazene Superbases

The anionic polymerization of styrene and 1,3-butadiene in the presence of phosphazene bases (t-BuP4, t-BuP2 and t-BuP1), in benzene at room temperature, was studied. When t-BuP1 was used, the polymerization proceeded in a controlled manner, whereas the obtained homopolymers exhibited the desired molecular weights and narrow polydispersity (Ð < 1.05). In the case of t-BuP2, homopolymers with higher than the theoretical molecular weights and relatively low polydispersity were obtained. On the other hand, in the presence of t-BuP4, the polymerization of styrene was uncontrolled due to the high reactivity of the formed carbanion. The kinetic studies from the polymerization of both monomers showed that the reaction rate follows the order of [t-BuP4]/[sec-BuLi] >>> [t-BuP2]/[sec-BuLi] >> [t-BuP1]/[sec-BuLi] > sec-BuLi. Furthermore, the addition of t-BuP2 and t-BuP1 prior the polymerization of 1,3-butadiene allowed the synthesis of polybutadiene with a high 1,2-microstructure (~45 wt %), due to the delocalization of the negative charge. Finally, the one pot synthesis of well-defined polyester-based copolymers [PS-b-PCL and PS-b-PLLA, PS: Polystyrene, PCL: Poly(ε-caprolactone) and PLLA: Poly(L-lactide)], with predictable molecular weights and a narrow molecular weight distribution (Ð < 1.2), was achieved by sequential copolymerization in the presence of t-BuP2 and t-BuP1.

Double-Layer Morphologies from a Silicon-Containing ABA Triblock Copolymer

A combined experimental and self-consistent-field theoretical (SCFT) investigation of the phase behavior of poly(stryrene- b-dimethylsiloxane- b-styrene) (PS- b-PDMS- b-PS, or SDS32) thin films during solvent vapor annealing is presented. The morphology of the triblock copolymer is described as a function of the as-cast film thickness and the ratio of two different solvent vapors, toluene and heptane. SDS32 formed terraced bilayer morphologies even when the film thickness was much lower than the commensurate thickness. The morphology transitioned between bilayer cylinders, bilayer perforated lamellae, and bilayer lamellae, including mixed structures such as a perforated lamella on top of a layer of in-plane cylinders, as the heptane fraction during solvent annealing increased. SCFT modeling showed the same morphological trends as a function of the block volume fraction. In comparison with diblock PS- b-PDMS with the same molecular weight, the SDS32 offers a simple route to produce a diversity of well-ordered bilayer structures with smaller feature sizes, including the formation of bilayer perforated lamellae over a large process window.