Koray Köksal

The linear optical properties of a multi-shell spherical quantum dot of a parabolic confinement for cases with and without a hydrogenic impurity

Throughout this work, we aim to explore the linear optical properties of a semiconductor multi-shell spherical quantum dot with and without a hydrogenic donor impurity. The core and well layers are defined by the parabolic electronic potentials in the radial direction. The energy levels and corresponding wavefunctions of the structure are calculated by using the shooting technique in the framework of the effective-mass approximation. We investigate the intersublevel absorption coefficients of a single electron and the hydrogenic donor impurity comparatively as a function of the photon energy. In addition, we carry out the effect of a donor impurity and the layer thickness on the oscillator strengths and magnitude and position of absorption coefficient peaks. We illustrate the electron probability distribution and variation of the energy levels in cases with and without the impurity for different thicknesses of layers. This kind of structure gives an opportunity to tune and control the absorption coefficient of the system by changing three different thickness parameters. Also it provides a possibility to separate 0s and 1p electrons in different regions of the quantum dot.

The angular electronic band structure and free particle model of aromatic molecules: High-frequency photon-induced ring current

This work introduces an analysis of the relationship of first-principles calculations based on DFT method with the results of free particle model for ring-shaped aromatic molecules. However, the main aim of the study is to reveal the angular electronic band structure of the ring-shaped molecules. As in the case of spherical molecules such as fullerene, it is possible to observe a parabolic dispersion of electronic states with the variation of angular quantum number in the planar ring-shaped molecules. This work also discusses the transition probabilities between the occupied and virtual states by analyzing the angular electronic band structure and the possibility of ring currents in the case of spin angular momentum (SAM) or orbital angular momentum (OAM) carrying light. Current study focuses on the benzene molecule to obtain its angular electronic band structure. The obtained electronic band structure can be considered as a useful tool to see the transition probabilities between the electronic states and possible contribution of the states to the ring currents. The photoinduced current due to the transfer of SAM into the benzene molecule has been investigated by using analytical calculations within the frame of time-dependent perturbation theory.

Optical manipulation of photo-induced current in spherical semiconductor quantum dots by optical vortices

In this work, we have investigated the existence of photo-induced current in spherically symmetric semiconductor quantum dots by orbital angular momentum carrying twisted light. For the quantum dot structure, the core and shell materials are and semiconductor, respectively. Because, the thickness of semiconductor layer is in the scale of nanometre, the structure has quantum mechanical properties. And, the total radius of quantum dot is comparable to the spot size of highly focused twisted laser beam. In that case, we investigate the effect of orbital angular momentum and radial node of twisted light on the induced current and magnetic field in the structure. Furthermore, we calculate dependence of induced current on frequency of the light. The results show that magnitude and direction of the induced current can be manipulated by tuning the parameters: radial node, orbital angular momentum, frequency of light and polarisation vector.

The electronic and optical properties of a triexciton in CdSe/ZnS core/shell quantum dot nanocrystals

In the study, we aim to investigate the electronic and optical properties of single excitons, biexcions and triexcitons in a CdSe/ZnS core/shell quantum dot nanocrystal. The electronic structure has been determined by solving of the Poisson–Schrödinger equations self-consistently. In calculations, the exchange-correlation effects between identical particles have been taken into account in the frame of the local density approximation. We have demonstrated that the optical properties of triexciton systems are remarkably different from the single and biexciton systems. Absorption peaks or transition energies of the triexciton system are well separated from those of single- and bi-exciton systems. We have observed that the core-radius dependent transition energy variations of triexcitons are higher when compared with single- and bi-excitonic systems. The transition energy shifts of double and triple excitons with respect to the single exciton have been calculated as a function of the core radius and we have shown that the energy shifts are inversely proportional with the radius. We have also investigated the radius-dependent changes in binding energies and lifetimes of the structures and the comparative results have been discussed in a detail manner.

Effect of a buffer layer between the shell and ligand on the optical properties of an exciton and biexciton in type-II quantum dot nanocrystals

In this study, we have investigated the effect of the buffer layers on the electronic and optical properties of an exciton (X) and a biexciton (XX) in a type-II CdTe/CdSe quantum dot nanocrystal. In an experimental study, it has been reported that when a CdTe/CdSe quantum dot nanocrystal is coated by a ZnTe material as a buffer layer, the photoluminescence quantum yield is growing from 4 to 20%. We have confirmed theoretically this improvement and extended the calculations to an XX structure. In the calculations, two different semiconductor materials, CdS and ZnTe, have been considered for the buffer layer. We have theoretically shown that the buffer layer causes an increase in the radiative oscillator strength of both X and XX. When the ZnTe is used as the buffer layer, the oscillator strength becomes stronger when compared to CdSe buffer material because of higher conduction band offset between CdSe and ZnTe.