Kouichi Nagano

A fully-integrated 0.13/spl mu/m CMOS mixed-signal SoC for DVD player applications

A mixed-signal SoC for DVD applications is designed in 0.13/spl mu/m 1P 6M CMOS. One DSP, two 32b RISC CPUs, three dedicated processing units, PRML read channel with an analog front end (AFE) and several other subsystems are integrated on the same die. The AFE contains a 5th-order G/sub m/-C filter and over 66dB C/N. The SoC contains 24M transistors in a 64mm/sup 2/ die and consumes 1.5W at 40MS/s which corresponds to 1.5/spl times/ DVD playback.

A 0.13um CMOS ultra-compact DVD SoC employing a full digital equalizing PRML read channel

A 0.13 /spl mu/m CMOS DVD SoC has been developed, reducing the die size from a previous 64 mm/sup 2/ to 34mm/sup 2/ without degrading its performance and functionality, by optimizing the chip architecture and implementation scheme in the same generation process technology. The presented SoC features a novel PRML read channel, employing full digital equalizers with an oversampling method to improve system stability while keeping channel quality.

Quasi-Synchronous Sampling and Adaptive Partial-Response Maximum-Likelihood Read-Channel System

We propose a read-channel system with quasi-synchronous sampling and an adaptive partial-response maximum-likelihood (PRML) method to achieve accurate timing recovery and correct data extraction under high-density recording with a high transfer rate. The proposed system can extract data correctly in the state of either oversampling or undersampling using first-in-first-out flip-flops (FIFOs) and an asynchronously sampled data processable maximum-likelihood detector (ASML). In other words, it allows a sampling clock to be incompletely synchronized with a channel bit. Furthermore, the ASML adaptively learns the references required for calculating branch metrics even though the input data are not synchronized with the channel bit. This system achieves stable data extraction under quasi-synchronous sampling, improves the bit-error-rate performance, and can be applied to next-generation, high-density, and high-transfer-rate storage systems.