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Dive into the research topics where Kuang-woo Nam is active.

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Featured researches published by Kuang-woo Nam.


international microwave symposium | 2005

Ultra-miniature monolithic FBAR filters for wireless applications

Dong-Ha Shim; Yun-Kwon Park; Kuang-woo Nam; Seok-chul Yun; Duck-Hwan Kim; Byeoung-ju Ha; In-Sang Song

This paper presents ultra-miniature monolithic transmit (Tx) filters for 1900 MHz PCS using thin film bulk acoustic resonators (FBAR) technology. Conventional FBAR filters often include multiple tuning inductors, which have prevented the miniaturization and the monolithic integration of the filters. However, the developed filter has a novel circuit configuration using a single integrated inductor to minimize the size. The FBAR block consists of seven FBARs electrically coupled in a ladder topology. A meander type inductor is used for simplicity of fabrication processes and is optimized to increase the receive (Rx) band rejection performance. The filters are hermetically packaged at a wafer-level, which enables us to achieve a size of 1.0 mm /spl times/ 1.0 mm /spl times/ 0.7 mm. The packaged filters showed high performance with insertion loss less than 3.3 dB and Rx band rejection over 35 dB.


Integrated Ferroelectrics | 2005

MEMS BASED BULK ACOUSTIC WAVE RESONATORS FOR MOBILE APPLICATIONS

Kuang-woo Nam; Yun-Kwon Park; Seog-woo Hong; Jaemoon Pak; Gwangseo Park; In-Sang Song

ABSTRACT A silicon based film bulk acoustic wave resonator (FBAR) composed with a filter and a duplexer is fabricated using the bulk micro-machining process. It has a simple MIM (metal-insulator-metal) membrane structure using molybdenum (Mo) for the top and bottom electrodes. The bulk acoustic wave resonances are generated by the piezoelectricity of aluminum nitride (AlN) with an air gap cavity fabricated below the membrane by silicon deep-etch process to reduce acoustic loss of FBAR. The fabricated FBAR is measured with HP 8510C vector network analyzer in wide (0.5∼10.5 GHz) and narrow (1.7∼2.1 GHz) frequency range. The measured series and parallel resonance frequencies are 1856 MHz and 1907 MHz, respectively. The minimum insertion losses are less than 0.07 dB at the series resonance frequency. With the increase of the membrane area, insertion loss decreases and effective electromechanical coefficient increases. The measured effective electromechanical coefficients are higher than 6.4%. The circuit modeling of FBAR is preformed based on the MBVD (modified Butterworth Van-Dyke) model. The above results demonstrate that the fabricated FBAR has sufficient performance to be the building block of RF filters for mobile applications.


Archive | 2004

Duplexer fabricated with monolithic FBAR and isolation part and a method thereof

In-Sang Song; Byeoung-ju Ha; Yun-Kwon Park; Kuang-woo Nam; Dong-Ha Shim


Archive | 2004

Electrostatic RF MEMS switches

In-Sang Song; Young-Il Kim; Moon-chul Lee; Dong-Ha Shim; Young-Tack Hong; Sun-Hee Park; Kuang-woo Nam


Archive | 2006

Multi-band filter module and method of fabricating the same

Kuang-woo Nam; Chul-Soo Kim; In-Sang Song; Yun-Kwon Park; Eun-Seok Park


Sensors and Actuators A-physical | 2008

Monolithic 1-Chip FBAR duplexer for W-CDMA handsets

Kuang-woo Nam; Yun-Kwon Park; Byeoung-ju Ha; Chul-Soo Kim; Jea-Shik Shin; Seokchool Yun; Jaemoon Pak; Gwangseo Park; In-Sang Song


Archive | 2005

Filter comprising inductor, duplexer using the filter and fabricating methods thereof

In-Sang Song; Byeoung-ju Ha; Yun-Kwon Park; Jong-seok Kim; Duck-Hwan Kim; Kuang-woo Nam; Hae-seok Park; Seog-woo Hong


Archive | 2005

MEMS device package and method for manufacturing the same

Jong-seok Kim; Yun-Kwon Park; Kuang-woo Nam; Seok-chul Yun; In-Sang Song


Archive | 2007

Integrated device and fabricating method thereof

Eun-Seok Park; Kuang-woo Nam; In-Sang Song; Chul-Soo Kim; Yun-Kwon Park


Archive | 2007

Film bulk acoustic resonator filter and duplexer

Kuang-woo Nam; Yun-Kwon Park; In-Sang Song; Chul-Soo Kim; Eun-Seok Park

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