In Sang Song

A 60 GHz Current-Reuse LO-Boosting Mixer in 90 nm CMOS

This letter presents a 60 GHz direct down-conversion mixer in a 90 nm CMOS. The mixer consists of an RF transconductance stage, a switching stage, an LO amplification stage, a balun and a buffer amplifier, and employs a current-reuse LO-boosting technique for low power consumption with small LO input power. The measured conversion gain of the differential IF output is 12 dB at an input LO power of -13 dBm. The mixer consumes 8.8 mW and the measured 3 dB IF bandwidth is greater than 1.2 GHz. To the best of our knowledge, this mixer achieves the highest conversion gain with the lowest LO input power of all published 60 GHz band CMOS mixers.

A Wideband Aperture Efficient 60-GHz Series-Fed E-Shaped Patch Antenna Array With Copolarized Parasitic Patches

A novel series-fed E-shaped patch antenna array with copolarized parasitic patches for enhanced aperture efficiency at 60-GHz unlicensed wideband applications is proposed. The additional radiation from the inserted copolarized parasitic patches between series-fed patches improves the gain flatness remarkably as well as the gain and aperture efficiency, because of the offset resonant frequency. The four-array antenna with parasitic patches presents 0.8-dB gain flatness over the whole 57-66 GHz unlicensed band, 14.5 dBi peak gain, and 63.6% aperture efficiency while that without parasitic patches shows 1.4-dB flatness, 13.4 dBi peak gain, and 49.2% aperture efficiency, without any change in the antenna size,

Compact LTCC Yagi-Uda type end-fire antenna-in-package for 60 GHz wireless communications

6.0\times 14.7\times 0.25

A 60-GHz transceiver system with low-power CMOS OOK modulator and demodulator

mm2.

LTCC SoP integration of 60 GHz transmitter and receiver radios

A compact low-temperature co-fired ceramic (LTCC) antenna-in-package (AiP) solution for 60 GHz mobile wireless application is proposed in this paper. To achieve compact size for mobile applications, the end-fire radiation AiP is designed using the Yagi-Uda antenna concept adding image theory and integrated CMOS chip connected wire-bonding. The LTCC AiP module including the CMOS chip has the size of 3.7 × 5.7 × 0.85 mm3. The measured result of input return loss characteristic is confirmed to be about 9 GHz bandwidth from 57 GHz to 66 GHz using on-chip probing on a FR-4 evaluation board. The 6.2 dBi gain, and over 70 degrees (E, H-plane) half power beam width (HPBW) at 60 GHz are obtained by the 3D EM simulator. The estimated radiation efficiency is about 90 % at 60 GHz.

A 60 GHz Variable Gain Amplifier with a Low Phase Imbalance in 0.18 μm SiGe BiCMOS Technology

A 60GHz transceiver system with low-power CMOS OOK modulator and demodulator is presented in this paper. The 60 GHz modulator is designed in a 90-nm CMOS process by current reuse and consumes 14.4-mW dc power at the ON-state. A data rate of up to 2 Gb/s has been measured. The 60GHz OOK demodulator is designed in a 130nm CMOS process. The demodulator consumes 14.7 mW, and recovers up to 5 Gb/s with the gain boosting detector and baseband amplifier. The fabricated 60 GHz modulator and demodulator are successfully integrated in an LTCC SiP transmitter module and receiver module with 1 by 2 patch antenna, respectively. Using these LTCC SiP modules, 648 Mb/s wireless video transmission was successfully demonstrated at 20-cm wireless distance.

Low power and high speed OOK modulator for wireless inter-chip communications

This paper presents the 60 GHz SoP research activities including the integration and demonstration of a transmitter (Tx)/receiver (Rx) radio as well as design and fabrication of mmW sub-circuits such as low loss transmission lines and transitions with air cavities, a resonator, filters, and antennas, all in LTCC multilayer circuits.

Low-profile wideband E-shaped patch antenna for 60GHz Communication

A 60GHz variable gain amplifier is designed and fabricated in 0.18 μm SiGe BiCMOS technology. A phase compensation technique is employed for the minimization of the phase imbalance at different gain states. With a 3.3 V supply, the amplifier achieves a variable gain ranging from -2.7 dB to 17.7 dB at 60 GHz, consuming DC power of 50 mW. The measured RMS phase imbalance is less than 2.8° at 57-66 GHz of the 60 GHz full band. The output 1-dB gain compression point is >; 2 dBm for all of the gain states at 60 GHz.

A Highly Integrated 1-Bit Phase Shifter Based on High-Pass/Low-Pass Structure

Millimeter-wave on-off keying (OOK) modulator for wireless inter-chip communications is proposed. The proposed modulator not only has a wide bandwidth which allows the high speed modulation but also operates with a low power consumption enhancing the power efficiency and assures the inter-chip communication. With wide bandwidth and the OOK modulation scheme, it can process data having 12 Gbps while consuming a little DC power showing the energy efficiency of 0.75 pJ/bit. The on/off ratio of the circuit is higher than 25 dB assuring little degradation on the SNR. The chip size using 65 nm GP RF CMOS is 0.254 mm2 which is very compact compared to other state-of-the-art works.

A Low Power LNA-Phase Shifter With Vector Sum Method for 60 GHz Beamforming Receiver

This paper presents a low profile, wideband E-shaped patch antenna for a 60 GHz communication system. Two slots are placed into the antenna to provide wide-band characteristics. The proposed antenna can provide a peak gain of 9.2 dBi with 22.5% of 3-dB gain bandwidth and 22% of wide impedance bandwidth. The simulated and measured radiation pattern is also presented.