Kuang-Yeh Chang

Amorphous silicon anti-fuse for high-speed FPGA application

Amorphous silicon has been used as a programmable material for a metal-to-metal anti-fuse. A study on the characteristics of such an anti-fuse and the parameters that affect its programming characteristics is presented. In the unprogrammed state the resistance of the anti-fuse is greater than 1 G Omega and the capacitance is less than 1.3 fF. Programmed state resistances of less than 50 Omega have been achieved. This technology is in production for a 1.0- mu m CMOS-based 1000-gate field programmable gate array (FPGA).<<ETX>>

A high reliability triple metal process for high performance application specific circuits

A triple metal process for high performance, high reliability application specific CMOS circuits is described. Key features of this process are identical pitches for all three levels of metal, layered metal for high electromigration resistance of interconnects and vias, planarised dielectrics, and very good hot carrier reliability of submicron MOS devices.<<ETX>>

Improved hot carrier reliability of submicron MOS devices by modifying the PECVD IMO film

The impact of the PECVD IMO film on hot carrier reliability of sub-micron MOS devices has been studied. It has been shown, for the first time, that modifying the PECVD IMO film can result in more than an order of magnitude improvement in the hot carrier reliability. The study underscores the importance of backed processing on the device reliability and provides direction for improving device reliability.<<ETX>>