Kwang Taeg Rim

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

Nitrogen atoms that replace carbon atoms in the graphene lattice strongly modify the local electronic structure. In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

High-resolution scanning tunneling microscopy imaging of mesoscopic graphene sheets on an insulating surface

We present scanning tunneling microscopy (STM) images of single-layer graphene crystals examined under ultrahigh vacuum conditions. The samples, with lateral dimensions on the micrometer scale, were prepared on a silicon dioxide surface by direct exfoliation of crystalline graphite. The single-layer films were identified by using Raman spectroscopy. Topographic images of single-layer samples display the honeycomb structure expected for the full hexagonal symmetry of an isolated graphene monolayer. The absence of observable defects in the STM images is indicative of the high quality of these films. Crystals composed of a few layers of graphene also were examined. They exhibited dramatically different STM topography, displaying the reduced threefold symmetry characteristic of the surface of bulk graphite.

Structure and Electronic Properties of Graphene Nanoislands on Co(0001)

We have grown well-ordered graphene adlayers on the lattice-matched Co(0001) surface. Low-temperature scanning tunneling microscopy measurements demonstrate an on-top registry of the carbon atoms with respect to the Co(0001) surface. The tunneling conductance spectrum shows that the electronic structure is substantially altered from that of isolated graphene, implying a strong coupling between graphene and cobalt states. Calculations using density functional theory confirm that structures with on-top registry have the lowest energy and provide clear evidence for strong electronic coupling between the graphene pi-states and Co d-states at the interface.

Local Atomic and Electronic Structure of Boron Chemical Doping in Monolayer Graphene

We use scanning tunneling microscopy and X-ray spectroscopy to characterize the atomic and electronic structure of boron-doped and nitrogen-doped graphene created by chemical vapor deposition on copper substrates. Microscopic measurements show that boron, like nitrogen, incorporates into the carbon lattice primarily in the graphitic form and contributes ~0.5 carriers into the graphene sheet per dopant. Density functional theory calculations indicate that boron dopants interact strongly with the underlying copper substrate while nitrogen dopants do not. The local bonding differences between graphitic boron and nitrogen dopants lead to large scale differences in dopant distribution. The distribution of dopants is observed to be completely random in the case of boron, while nitrogen displays strong sublattice clustering. Structurally, nitrogen-doped graphene is relatively defect-free while boron-doped graphene films show a large number of Stone-Wales defects. These defects create local electronic resonances and cause electronic scattering, but do not electronically dope the graphene film.

Scanning tunneling microscopy and theoretical study of water adsorption on Fe3O4: implications for catalysis.

The reduced surface of a natural Hematite single crystal α-Fe(2)O(3)(0001) sample has multiple surface domains with different terminations, Fe(2)O(3)(0001), FeO(111), and Fe(3)O(4)(111). The adsorption of water on this surface was investigated via Scanning Tunneling Microscopy (STM) and first-principle theoretical simulations. Water species are observed only on the Fe-terminated Fe(3)O(4)(111) surface at temperatures up to 235 K. Between 235 and 245 K we observed a change in the surface species from intact water molecules and hydroxyl groups bound to the surface to only hydroxyl groups atop the surface terminating Fe(III) cations. This indicates a low energy barrier for water dissociation on the surface of Fe(3)O(4) that is supported by our theoretical computations. Our first principles simulations confirm the identity of the surface species proposed from the STM images, finding that the most stable state of a water molecule is the dissociated one (OH + H), with OH atop surface terminating Fe(III) sites and H atop under-coordinated oxygen sites. Attempts to simulate reaction of the surface OH with coadsorbed CO fail because the only binding sites for CO are the surface Fe(III) atoms, which are blocked by the much more strongly bound OH. In order to promote this reaction we simulated a surface decorated with gold atoms. The Au adatoms are found to cap the under-coordinated oxygen sites and dosed CO is found to bind to the Au adatom. This newly created binding site for CO not only allows for coexistence of CO and OH on the surface of Fe(3)O(4) but also provides colocation between the two species. These two factors are likely promoters of catalytic activity on Au/Fe(3)O(4)(111) surfaces.

Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy

Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.

Direct Observation of Atomic Scale Graphitic Layer Growth

The demand for better understanding of the mechanism of soot formation is driven by the negative environmental and health impact brought about by the burning of fossil fuels. While soot particles accumulate most of their mass from surface reactions, the mechanism for surface growth has so far been characterized primarily by measurements of the kinetics. Here we provide atomic-scale scanning tunneling microscope images of carbon growth by chemistry similar to that of importance in soot formation. At a temperature of 625 K, exposure of the surface of highly ordered pyrolytic graphite to 1 Langmuir of acetylene leads to the formation of both graphitic and amorphous carbonaceous material at the edges of nanoscale pits. Given the similarity of the electronic structure at these graphite defect sites to that of soot material growing in flames at higher temperatures, the present studies shed light on the mechanism for soot growth. These experiments also suggest that healing of defect sites in graphene nanostructures, which are of considerable interest as novel electronic devices, should be possible at modest surface temperatures by exposure of defected graphene to unsaturated hydrocarbons.

Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane self-assembled layers.