Mark S. Hybertsen

Dependence of single-molecule junction conductance on molecular conformation

Since it was first suggested that a single molecule might function as an active electronic component, a number of techniques have been developed to measure the charge transport properties of single molecules. Although scanning tunnelling microscopy observations under high vacuum conditions can allow stable measurements of electron transport, most measurements of a single molecule bonded in a metal–molecule–metal junction exhibit relatively large variations in conductance. As a result, even simple predictions about how molecules behave in such junctions have still not been rigorously tested. For instance, it is well known that the tunnelling current passing through a molecule depends on its conformation; but although some experiments have verified this effect, a comprehensive mapping of how junction conductance changes with molecular conformation is not yet available. In the simple case of a biphenyl—a molecule with two phenyl rings linked by a single C–C bond—conductance is expected to change with the relative twist angle between the two rings, with the planar conformation having the highest conductance. Here we use amine link groups to form single-molecule junctions with more reproducible current–voltage characteristics. This allows us to extract average conductance values from thousands of individual measurements on a series of seven biphenyl molecules with different ring substitutions that alter the twist angle of the molecules. We find that the conductance for the series decreases with increasing twist angle, consistent with a cosine-squared relation predicted for transport through π-conjugated biphenyl systems.

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

Nitrogen atoms that replace carbon atoms in the graphene lattice strongly modify the local electronic structure. In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

High-resolution scanning tunneling microscopy imaging of mesoscopic graphene sheets on an insulating surface

We present scanning tunneling microscopy (STM) images of single-layer graphene crystals examined under ultrahigh vacuum conditions. The samples, with lateral dimensions on the micrometer scale, were prepared on a silicon dioxide surface by direct exfoliation of crystalline graphite. The single-layer films were identified by using Raman spectroscopy. Topographic images of single-layer samples display the honeycomb structure expected for the full hexagonal symmetry of an isolated graphene monolayer. The absence of observable defects in the STM images is indicative of the high quality of these films. Crystals composed of a few layers of graphene also were examined. They exhibited dramatically different STM topography, displaying the reduced threefold symmetry characteristic of the surface of bulk graphite.

Theory of neutral and charged excitons in monolayer transition metal dichalcogenides

We present a microscopic theory of neutral excitons and charged excitons (trions) in monolayers of transition metal dichalcogenides, including molybdenum disulfide. Our theory is based on an effective mass model of excitons and trions, parametrized by ab initio calculations and incorporating a proper treatment of screening in two dimensions. The calculated exciton binding energies are in good agreement with high-level many-body computations based on the Bethe-Salpeter equation. Furthermore, our calculations for the more complex trion species compare very favorably with recent experimental measurements, and provide atomistic insight into the microscopic features which determine the trion binding energy.

Connecting dopant bond type with electronic structure in n-doped graphene

Robust methods to tune the unique electronic properties of graphene by chemical modification are in great demand due to the potential of the two dimensional material to impact a range of device applications. Here we show that carbon and nitrogen core-level resonant X-ray spectroscopy is a sensitive probe of chemical bonding and electronic structure of chemical dopants introduced in single-sheet graphene films. In conjunction with density functional theory based calculations, we are able to obtain a detailed picture of bond types and electronic structure in graphene doped with nitrogen at the sub-percent level. We show that different N-bond types, including graphitic, pyridinic, and nitrilic, can exist in a single, dilutely N-doped graphene sheet. We show that these various bond types have profoundly different effects on the carrier concentration, indicating that control over the dopant bond type is a crucial requirement in advancing graphene electronics.

In situ formation of highly conducting covalent Au-C contacts for single-molecule junctions

Charge transport across metal-molecule interfaces has an important role in organic electronics. Typically, chemical link groups such as thiols or amines are used to bind organic molecules to metal electrodes in single-molecule circuits, with these groups controlling both the physical structure and the electronic coupling at the interface. Direct metal-carbon coupling has been shown through C60, benzene and π-stacked benzene, but ideally the carbon backbone of the molecule should be covalently bonded to the electrode without intervening link groups. Here, we demonstrate a method to create junctions with such contacts. Trimethyl tin (SnMe(3))-terminated polymethylene chains are used to form single-molecule junctions with a break-junction technique. Gold atoms at the electrode displace the SnMe(3) linkers, leading to the formation of direct Au-C bonded single-molecule junctions with a conductance that is ∼100 times larger than analogous alkanes with most other terminations. The conductance of these Au-C bonded alkanes decreases exponentially with molecular length, with a decay constant of 0.97 per methylene, consistent with a non-resonant transport mechanism. Control experiments and ab initio calculations show that high conductances are achieved because a covalent Au-C sigma (σ) bond is formed. This offers a new method for making reproducible and highly conducting metal-organic contacts.

Structure and Electronic Properties of Graphene Nanoislands on Co(0001)

We have grown well-ordered graphene adlayers on the lattice-matched Co(0001) surface. Low-temperature scanning tunneling microscopy measurements demonstrate an on-top registry of the carbon atoms with respect to the Co(0001) surface. The tunneling conductance spectrum shows that the electronic structure is substantially altered from that of isolated graphene, implying a strong coupling between graphene and cobalt states. Calculations using density functional theory confirm that structures with on-top registry have the lowest energy and provide clear evidence for strong electronic coupling between the graphene pi-states and Co d-states at the interface.

ELECTRONIC STATES IN LA2-XSRXCUO4+GAMMA PROBED BY SOFT-X-RAY ABSORPTION

Oxygen {ital K}-edge absorption spectra of carefully characterized La{sub 2{minus}{ital x}}Sr{sub {ital x}}CuO{sub 4+{delta}} samples were measured using a bulk-sensitive fluoresence-yield-detection method. They reveal two distinct pre-edge peaks which evolve systematically as a function of Sr concentration. The measured spectra are quantitatively described by calculations based on the Hubbard model, including local Coulomb interactions and core-hole excitonic correlations. The absorption data are consistent with a description of electronic states based on a doped charge-transfer insulator.

Interface structure between silicon and its oxide by first-principles molecular dynamics

The requirement for increasingly thin (<50 Å) insulating oxide layers in silicon-based electronic devices highlights the importance of characterizing the Si–SiO2 interface structure at the atomic scale. Such a characterization relies to a large extent on an understanding of the atomic-scale mechanisms that govern the oxidation process. The widely used Deal–Grove model invokes a two-step process in which oxygen first diffuses through the amorphous oxide network before attacking the silicon substrate, resulting in the formation of new oxide at the buried interface. But it remains unclear how such a process can yield the observed near-perfect interface. Here we use first-principles molecular dynamics to generate a model interface structure by simulating the oxidation of three silicon layers. The resulting structure reveals an unexpected excess of silicon atoms at the interface, yet shows no bonding defects. Changes in the bonding network near the interface occur during the simulation via transient exchange events wherein oxygen atoms are momentarily bonded to three silicon atoms — this mechanism enables the interface to evolve without leaving dangling bonds.

Microscopic theory of singlet exciton fission. II. Application to pentacene dimers and the role of superexchange.

We apply our theoretical formalism for singlet exciton fission, introduced in the previous paper [T. C. Berkelbach, M. S. Hybertsen, and D. R. Reichman, J. Chem. Phys. 138, 114102 (2013)] to molecular dimers of pentacene, a widely studied material that exhibits singlet fission in the crystal phase. We address a longstanding theoretical issue, namely whether singlet fission proceeds via two sequential electron transfer steps mediated by charge-transfer states or via a direct two-electron transfer process. We find evidence for a superexchange mediated mechanism, whereby the fission process proceeds through virtual charge-transfer states which may be very high in energy. In particular, this mechanism predicts efficient singlet fission on the sub-picosecond timescale, in reasonable agreement with experiment. We investigate the role played by molecular vibrations in mediating relaxation and decoherence, finding that different physically reasonable forms for the bath relaxation function give similar results. We also examine the competing direct coupling mechanism and find it to yield fission rates slower in comparison with the superexchange mechanism for the dimer. We discuss implications for crystalline pentacene, including the limitations of the dimer model.