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Dive into the research topics where Kyeong Won Lee is active.

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Featured researches published by Kyeong Won Lee.


Scientific Reports | 2015

High-performance graphene-quantum-dot photodetectors

Chang Oh Kim; Sung Won Hwang; Sung Kim; Dong Hee Shin; Soo Seok Kang; Jong Min Kim; Chan Wook Jang; Ju Hwan Kim; Kyeong Won Lee; Suk-Ho Choi; E. H. Hwang

Graphene quantum dots (GQDs) have received much attention due to their novel phenomena of charge transport and light absorption/emission. The optical transitions are known to be available up to ~6 eV in GQDs, especially useful for ultraviolet (UV) photodetectors (PDs). Thus, the demonstration of photodetection gain with GQDs would be the basis for a plenty of applications not only as a single-function device in detecting optical signals but also a key component in the optoelectronic integrated circuits. Here, we firstly report high-efficient photocurrent (PC) behaviors of PDs consisting of multiple-layer GQDs sandwiched between graphene sheets. High detectivity (>1011 cm Hz1/2/W) and responsivity (0.2 ~ 0.5 A/W) are achieved in the broad spectral range from UV to near infrared. The observed unique PD characteristics prove to be dominated by the tunneling of charge carriers through the energy states in GQDs, based on bias-dependent variations of the band profiles, resulting in novel dark current and PC behaviors.


ACS Applied Materials & Interfaces | 2014

Near-ultraviolet-sensitive graphene/porous silicon photodetectors.

Jungkil Kim; Soong Sin Joo; Kyeong Won Lee; Ju Hwan Kim; Dong Hee Shin; Sung Kim; Suk-Ho Choi

Porous silicon (PSi) is recognized as an attractive building block for photonic devices because of its novel properties including high ratio of surface to volume and high light absorption. We first report near-ultraviolet (UV)-sensitive graphene/PSi photodetectors (PDs) fabricated by utilizing graphene and PSi as a carrier collector and a photoexcitation layer, respectively. Thanks to high light absorption and enlarged energy-band gap of PSi, the responsivity (Ri) and quantum efficiency (QE) of the PDs are markedly enhanced in the near-UV range. The performances of PDs are systemically studied for various porosities of PSi, controlled by varying the electroless-deposition time (td) of Ag nanoparticles for the use of Si etching. Largest gain is obtained at td = 3 s, consistent with the maximal enhancement of Ri and QE in the near UV range, which originates from the well-defined interface at the graphene/PSi junction, as proved by atomic- and electrostatic-force microscopies. Optimized response speed is ∼10 times faster compared to graphene/single-crystalline Si PDs. These and other unique PD characteristics prove to be governed by typical Schottky diode-like transport of charge carriers at the graphene/PSi junctions, based on bias-dependent variations of the band profiles, resulting in novel dark- and photocurrent behaviors.


Advanced Materials | 2015

Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

Dong Hee Shin; Sung Kim; Jong Min Kim; Chan Wook Jang; Ju Hwan Kim; Kyeong Won Lee; Jungkil Kim; Si Duck Oh; Dae Hun Lee; Soo Seok Kang; Chang Oh Kim; Suk-Ho Choi; Kyung Joong Kim

Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism.


Nanotechnology | 2014

Enhancement of the effectiveness of graphene as a transparent conductive electrode by AgNO3 doping

Dong Hee Shin; Kyeong Won Lee; Jae Sung Lee; Ju Hwan Kim; Sung Kim; Suk-Ho Choi

Single-layer graphene sheets have been synthesized by using chemical vapor deposition, and subsequently doped with AgNO₃ at various doping concentrations (n(D)) from 5 to 50 mM. Atomic force microscopy and field emission scanning electron microscopy images reveal the formation of ∼10-100 nm Ag particles on the graphene surface after doping. The type of n doping is confirmed by analyzing the n(D)-dependent behaviors of Raman scattering and the work function of the doped graphene films. The sheet resistance monotonically decreases to ∼173 Ω/sq with the increase of n(D) to 50 mM, and the transmittance is reduced by only about 3% for the highest n(D). At n(D) = 10 mM optimized doped graphene layers with a sheet resistance of 202 Ω/sq and a transmittance of 96% are obtained, resulting in a maximum DC conductivity/optical conductivity ratio (σ(DC)/σ(OP)) of ∼45.5, much larger than the minimum industry standard (σ(DC)/σ(OP) = ∼35) for transparent conductive electrodes.


Scientific Reports | 2016

Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes

Kyeong Won Lee; Chan Wook Jang; Dong Hee Shin; Jong Min Kim; Soo Seok Kang; Dae Hun Lee; Sung Kim; Suk-Ho Choi; E. H. Hwang

One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in graphene has been also reported theoretically as well as experimentally, but should be further studied to fully understand its mechanism, useful for practical device applications. Especially, there has been no observation about light-induced NDR (LNDR) in graphene-related structures despite very few reports on the LNDR in GaAs-based heterostructures. Here, we report first observation of LNDR in graphene/Si quantum dots-embedded SiO2 (SQDs:SiO2) multilayers (MLs) tunneling diodes. The LNDR strongly depends on temperature (T) as well as on SQD size, and the T dependence is consistent with photocurrent (PC)-decay behaviors. With increasing light power, the PC-voltage curves are more structured with peak-to-valley ratios over 2 at room temperature. The physical mechanism of the LNDR, governed by resonant tunneling of charge carriers through the minibands formed across the graphene/SQDs:SiO2 MLs and by their nonresonant phonon-assisted tunneling, is discussed based on theoretical considerations.


Scientific Reports | 2017

Analysis of the FGF gene family provides insights into aquatic adaptation in cetaceans

Kiwoong Nam; Kyeong Won Lee; Oksung Chung; Hyung-Soon Yim; Sun-Shin Cha; Sae-Won Lee; JeHoon Jun; Yun Sung Cho; Jong Bhak; João Pedro de Magalhães; Jung Hyun Lee; Jae-Yeon Jeong

Cetacean body structure and physiology exhibit dramatic adaptations to their aquatic environment. Fibroblast growth factors (FGFs) are a family of essential factors that regulate animal development and physiology; however, their role in cetacean evolution is not clearly understood. Here, we sequenced the fin whale genome and analysed FGFs from 8 cetaceans. FGF22, a hair follicle-enriched gene, exhibited pseudogenization, indicating that the function of this gene is no longer necessary in cetaceans that have lost most of their body hair. An evolutionary analysis revealed signatures of positive selection for FGF3 and FGF11, genes related to ear and tooth development and hypoxia, respectively. We found a D203G substitution in cetacean FGF9, which was predicted to affect FGF9 homodimerization, suggesting that this gene plays a role in the acquisition of rigid flippers for efficient manoeuvring. Cetaceans utilize low bone density as a buoyancy control mechanism, but the underlying genes are not known. We found that the expression of FGF23, a gene associated with reduced bone density, is greatly increased in the cetacean liver under hypoxic conditions, thus implicating FGF23 in low bone density in cetaceans. Altogether, our results provide novel insights into the roles of FGFs in cetacean adaptation to the aquatic environment.


Genes & Genomics | 2015

Characterization of cetacean Numt and its application into cetacean phylogeny

Young-Joon Ko; Eun Chan Yang; Jae-Hak Lee; Kyeong Won Lee; Jae-Yeon Jeong; Kiejung Park; Oksung Chung; Jong Bhak; Jung Hyun Lee; Hyung-Soon Yim

The translocations of mitochondrial DNA into chromosomal DNA (nuclear mitochondrial DNA, Numt) are ubiquitous in eukaryotes including yeasts, plants, and animals. The features of Numt and the recent sequencing technology can facilitate an expanded application of Numt into a valuable phylogenetic marker for unresolved taxa. To date, the phylogeny of extant cetaceans has been studied by a variety of morphological and molecular data and still has long attracted attention. Here, the Numts of cattle, two baleen whale and four toothed whales were detected by BLAST-search of the mitochondrial sequences of each species against its corresponding nuclear genome and we investigated the characteristics of cetacean Numt and revisited the phylogeny and evolution of cetartiodactyl using Numts. The content and distribution of Numt length showed similar patterns among six cetacean genomes. Under-representation of D-loop region-derived Numts and different abundance of Numt across D-loop sub-domains were observed in cetacean Numts except sperm whale. Examination of Numt location in cetacean nuclear genomes showed that some of orthologous Numts were integrated into exons, introns, and pseudogenes, suggesting that cetacean Numts may contribute to cetacean biology and evolution. Our phylogenetic study with cetacean Numt based on the maximum likelihood method corresponded to the study from other phylogenetic markers.


BioTechniques | 2017

Optimizing T4 DNA polymerase conditions enhances the efficiency of one-step sequence- and ligation-independent cloning

Mohammad Nazrul Islam; Kyeong Won Lee; Hyung-Soon Yim; Seong Hyuk Lee; Hae Chang Jung; Jung Hyun Lee; Jae-Yeon Jeong

Previously, we developed a one-step sequence- and ligation-independent cloning (SLIC) method that is simple, fast, and cost-effective. However, although one-step SLIC generally works well, its cloning efficiency is occasionally poor, potentially due to formation of stable secondary structures within the single-stranded DNA (ssDNA) region generated by T4 DNA polymerase during the 2.5 min treatment at room temperature. To overcome this problem, we developed a modified thermo-regulated one-step SLIC approach by testing shorter T4 DNA polymerase treatment durations (5 s-2.5 min) over a wide range of temperatures (25-75°C). The highest cloning efficiency resulted when inserts with homology lengths <20 bases were treated with T4 DNA polymerase for 30 s at 50°C. This briefer T4 polymerase treatment at a higher temperature helps increase cloning efficiency for inserts with strong secondary structures at their ends, increasing the utility of one-step SLIC for the cloning of short fragments.


FEBS Letters | 2017

FGF11 induced by hypoxia interacts with HIF‐1α and enhances its stability

Kyeong Won Lee; Hyung-Soon Yim; Jihye Shin; Cheolju Lee; Jung-Hyun Lee; Jae-Yeon Jeong

Fibroblast growth factor 11 (FGF11) is an intracellular FGF. Although induction of FGF11 by hypoxia has been observed in several cell types, the molecular function of FGF11 is not clearly understood yet. Here, we investigated the role of FGF11 under hypoxia. We identified hypoxia‐inducible factor‐1α (HIF‐1α) as an interacting protein of FGF11 using immunoprecipitation and mass spectrometry. FGF11 knockdown decreased HIF‐1α protein, while FGF11 overexpression increased it, without affecting HIF‐1α mRNA. Protein stability test and ubiquitination assay showed that FGF11 increased HIF‐1α stability by acting upstream of proteasomal degradation. Altogether, these results suggest a cross‐regulation between HIF‐1α and FGF11, through which hypoxia‐induced FGF11 reinforces hypoxia responses by enhancing the stability of HIF‐1α.


Oncology Reports | 2015

Hypoxia-induced fibroblast growth factor 11 stimulates capillary-like endothelial tube formation.

Jimin Yang; Woo Jean Kim; Hyoung Oh Jun; Eun Ju Lee; Kyeong Won Lee; Jae-Yeon Jeong; Sae-Won Lee

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Sung Kim

Kyung Hee University

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Hyung-Soon Yim

Korea University of Science and Technology

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Jong Bhak

Ulsan National Institute of Science and Technology

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