L. Campajola

A new generation photodetector for astroparticle physics: the VSiPMT

Abstract The VSiPMT (Vacuum Silicon PhotoMultiplier Tube) is an innovative design we proposed for a revolutionary photon detector. The main idea is to replace the classical dynode chain of a PMT with a SiPM (G-APD), the latter acting as an electron detector and amplifier. The aim is to match the large sensitive area of a photocathode with the performance of the SiPM technology. The VSiPMT has many attractive features. In particular, a low power consumption and an excellent photon counting capability. To prove the feasibility of the idea we first tested the performance of a special non-windowed SiPM by Hamamatsu (MPPC) as electron detector and current amplifier. Thanks to this result Hamamatsu realized two VSiPMT industrial prototypes. In this work, we present the results of a full characterization of the VSiPMT prototype.

Proof of feasibility of the Vacuum Silicon PhotoMultiplier Tube (VSiPMT)

The Vacuum Silicon PhotoMultiplier Tube (VSiPMT) is an innovative design we propose for a modern hybrid photodetector based on the combination of a Silicon PhotoMultiplier (SiPM) with a hemispherical vacuum glass PMT standard envelope. The basic idea is to replace the classical dynode chain of a PMT with a SiPM, which acts as an electron multiplying detector. Such a solution will match the goal of a large photocathode sensitive area with the performances of a SiPM. This will lead to many advantages such as lower power consumption, mild sensitivity to magnetic fields and high quantum efficiency. The feasibility of this idea has been throughly studied both from a theoretical and experimental point of view. As a first step we performed the full characterization of a special non-windowed Hamamatsu MPPC with a laser source. The response of the SiPM to an electron beam was studied as a function of the energy and of the incident angle by means of a Geant4-based simulation. In this paper we present the preliminary results of the characterization of the SiPM with an electron source and we discuss how the development of next generation SiPMs will overcome the main weaknesses of VSiPMT, such as relatively low PDE and high photocathode voltage.

Absolute dose calibration of EBT3 Gafchromic films

Radiochromic films are a commercial product available in a large number of different types. They can be used in a wide range of doses and fluence for different radiation types. The application in different fields such as photon and ion radiotherapy, industrial irradiations for modification of materials, sterilization and radiation hardness, makes very interesting to study the response of the films to more radiation types and energies. The aim of this work is to define the characteristics and dynamic range of EBT3 Gafchromic films for some specific applications. To this end the behaviour of EBT3 Gafchromic films has been studied in depth by comparing the films response to different radiation types. In particular, this work has been carried out to establish a useful procedure to monitor the electronic devices irradiations for radiation hardness applications. The dynamic range of EBT3 films has been found to be compatible with the typically demanded fluences and the calibration has been found to be absolute, namely independent of the incident radiation type. The easy handling, the possibility of replacement of the films and high resolution power allow the monitoring of irradiations with a high range of doses.

A novel method for SEE validation of complex SoCs using Low-Energy Proton beams

This paper discusses radiation tests on complex System-on-Chip (SoC) controllers using Low-Energy Protons (LEPs). The aim of this novel set of guidelines is to be also applicable to System In Package (SIP) or hybrid components that are now often used to overcome printed circuit boards real estate restrictions in Hi-Rel electronics. Despite the growing success of microcontrollers SoC in HiRel applications, general and standardized methods for Single Event Effects (SEE) testing of complex SoCs have not been widely established. This paper will propose a general methodology, structured in a modular test sequence for test definition, coding, validation and setup, with suggestions relevant also for FPGA tests and potentially for system-level characterization of miniaturized assemblies. It will be illustrated by the relevant example of a microcontroller solution including lockstep options. Our methodology proposes using a first step with LEPs for irradiation, and this paper compares this approach with current techniques and standards, showing how proton testing is becoming increasingly interesting, especially for ultra-deep submicron processes in proton dominated environments like thin-shielded Low Earth Orbit (LEO) missions or aircraft avionics. The proposed method can be used for testing a wide variety of SoCs, providing a good trade-off between a rigorous and expensive space qualification process and the usage of an untested COTS or non fault tolerant IPs with unpredictable failure modes. LEP tests have a high risk of misinterpretation, and a correct guideline is paramount to exploit their value.

Plasma dynamics and cations off-stoichiometry in LaAlO3 films grown in high pressures regimes

The indirect effect of oxygen background gas on the La/Al ratio during the growth of LaAlO3 (LAO) films by pulsed laser deposition (PLD) is analyzed, in a pressure range between 10−3 and 10−1 mbar. We resort to two complementary investigation methods: Rutherford backscattering spectroscopy and spectrally resolved, time-gated imaging of the laser plume. The first technique allows us to analyze the stoichiometry of the deposited films, and the latter allows us to analyze the plume expansion phase of the PLD process by collecting chemically resolved two-dimensional images of the relevant atomic/molecular species. The comparison between the results obtained by the two techniques allows us to highlight the role of the plume-gas interaction in affecting cations stoichiometry. Our results indicate that, in the considered pressure range, the background oxygen pressure affects the cations stoichiometry of the LAO films, besides determining their oxygen content.

First results of performance tests of the newly designed Vacuum Silicon Photo Multiplier Tube (VSiPMT).

We invented (2007) the VSiPMT, a novel, high-gain, photo detector device and we publically proposed this idea in an International Conference for the first time at the 11th Topical Seminar on Innovative Particle and Radiation Detectors (IPRD08) in Siena, triggering deep discussions on the feasibility of the device itself and on the convenience of such a solution. After several years spent in designing, evaluation, tests and eventually negotiations with some suppliers, we finally got a couple of prototypes of the Vacuum Silicon Photo Multiplier Tube (VSiPMT) made under our specifications by Hamamatsu. We present in this paper the most important results of characterization tests of the first prototypes of the VSiPMT.

Study of semi-transparent conductive layers for the realization of high quantum efficiency transmission mode CsI photocathodes for vacuum photodetectors

We worked on the R&D of an innovative photodetector, the Vacuum Silicon Photomultiplier Tube (VSiPMT). The VSiPMT is composed by a photocathode and a solid state amplification stage. A semi-transparent conductive layer is necessary to supply voltage and to obtain a highly efficient CsI photocathode. Since the literature is poor on this topic we performed a systematic and detailed study of a set of semi-transparent conductive layers, made by different material and thickness. A CsI photocathode was evaporated on each sample. The impact of the semi-transparent conductive layer on the quantum efficiency of the photocathode is discussed.

A beam pulser at the TTT-3 tandem accelerator of the university of naples

The continuous beam provided by the TTT-3 accelerator of the University of Naples have to be pulsed with 5 ns length bunch to allow experiments in many fields of the fundamental and applied physics. The characteristics of the first low energy chopper prototype and the results obtained during preliminary test with the beam are presented.

VSiPMT: An hybrid approach to high resolution photodetectors

The VSiPMT (Vacuum Silicon Photomultiplier Tube) is an innovative design for a revolutionary hybrid photodetector. The idea consists in replacing the classic dynode chain of a classic PMT with a SiPM. This new device aims at extending SiPM technology to large detection volumes. In this configuration, we match the large sensitive area of a photocathode with the performance of SiPM technology, which thererefore acts like an electron detector and current amplifier. The excellent photon counting capability, fast response, low power consumption and great stability are among the most attractive features of the VSiPMT. Hamamatsu realized two VSiPMT industrial prototypes with a photocathode of 3 mm diameter. In this work we present the progresses on the realization of a 1-inch prototype based on CsI photocathode and the preliminary tests we are performing on it.

Applications of Accelerators and Radiation Sources in the Field of Space Research and Industry

Beyond their important economic role in commercial communications, satellites in general are critical infrastructure because of the services they provide. In addition to satellites providing information which facilitates a better understanding of the space environment and improved performance of physics experiments, satellite observations are also used to actively monitor weather, geological processes, agricultural development and the evolution of natural and man-made hazards. Defence agencies depend on satellite services for communication in remote locations, as well as for reconnaissance and intelligence. Both commercial and government users rely on communication satellites to provide communication in the event of a disaster that damages ground-based communication systems, provide news, education and entertainment to remote areas and connect global businesses. The space radiation environment is an hazard to most satellite missions and can lead to extremely difficult operating conditions for all of the equipment travelling in space. Here, we first provide an overview of the main components of space radiation environment, followed by a description of the basic mechanism of the interaction of radiation with matter. This is followed by an introduction to the space radiation hardness assurance problem and the main effects of natural radiation to the microelectronics (total ionizing dose, displacement damage and the single-event effect and a description of how different effects occurring in the space can be tested in on-ground experiments by using particle accelerators and radiation sources. We also discuss standards and the recommended procedures to obtain reliable results.