L. Salamanca-Riba

Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices

ZnO thin films have been grown heteroepitaxially on epi-GaN/sapphire (0001) substrates. Rutherford backscattering spectroscopy, ion channeling, and high resolution transmission electron microscopy studies revealed high-quality epitaxial growth of ZnO on GaN with an atomically sharp interface. The x-ray diffraction and ion channeling measurements indicate near perfect alignment of the ZnO epilayers on GaN as compared to those grown directly on sapphire (0001). Low-temperature cathodoluminescence studies also indicate high optical quality of these films presumably due to the close lattice match and stacking order between ZnO and GaN. Lattice-matched epitaxy and good luminescence properties of ZnO/GaN heterostructures are thus promising for ultraviolet lasers. These heterostructures demonstrate the feasibility of integrating hybrid ZnO/GaN optoelectronic devices.

Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects

A series of heteroepitaxial Ba0.6Sr0.4TiO3 were grown on 0.29(LaAlO3):0.35(Sr2TaAlO6) substrates using pulsed-laser deposition. X-ray characterization revealed compressive in-plane stresses in the thinnest films, which were relaxed in a continuous fashion with increasing thickness. A theoretical treatment of the misfit strain was in good agreement with the measured out-of-plane lattice parameter. The low-frequency dielectric constant was measured to be significantly less than the bulk value and found to decrease rapidly for films less than 100 nm. A thermodynamic model was developed to understand the reduction in dielectric constant. By observing the microstructure using plan-view and cross-section transmission electron microscopy, we identified local strain associated with a threading dislocation density on the order of 1011 cm−2 as a possible mechanism for dielectric degradation in these films.

Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3

Large-scale wurtzite GaN nanowires and nanotubes were grown by direct reaction of metal gallium vapor with flowing ammonia in an 850–900 °C horizontal oven. The cylindrical structures were as long as 500 μm with diameters between 26 and ∼100 nm. Transmission electron microscopy, scanning electron microscopy, and x-ray diffraction were used to measure the size and structures of the samples. Preliminary results show that the size of the nanowires depends on the temperature and the NH3 flow rate. The growth mechanism is discussed briefly. The simple method presented here demonstrates that GaN nanowires can be grown without the use of a template or catalyst, as reported elsewhere.

Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite

We report on the discovery of a lead-free morphotropic phase boundary (MPB) in Sm doped BiFeO3 with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric to antiferroelectric transition at approximately Bi0.86Sm0.14FeO3 with dielectric constant and out-of-plane piezoelectric coefficient comparable to those of epitaxial (001) oriented PbZr0.52Ti0.48O3 (PZT) thin films at the MPB. The discovered composition may be a strong candidate of a Pb-free piezoelectric replacement of PZT.

Inversion of wurtzite GaN(0001) by exposure to magnesium

Magnesium incorporation during the molecular-beam epitaxy growth of wurtzite GaN is found to invert the Ga-polar (0001) face to the N-polar face. The polarity is identified based on the two different sets of reconstructions seen on the film prior to and after about 1 monolayer Mg exposure. The inversion boundary is seen to lie on the (0001) plane from transmission electron microscopy images, and a structural model is presented for the inversion. On the Ga-polar face, Mg is also seen to stabilize growth in the N-rich regime.

Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films

We have studied the effect of misfit strain on the microstructure and properties of ferroelectric lead zirconate titanate thin films. We have changed the misfit strain by varying the film thickness and studied the thickness effect on the domain formation of epitaxial PbZr0.2Ti0.8O3 (PZT) films grown by pulsed laser deposition on (001) LaAlO3 substrates with La0.5Sr0.5CoO3 (LSCO) electrodes. The nominal thickness of the PZT films was varied from 60 to 400 nm with the LSCO electrode thickness kept constant at 50 nm. X-ray diffraction experiments show that the films relax via the formation of a domains, the fraction of which increase with the ferroelectric film thickness. The c-axis lattice constant of PZT films calculated from the 002 reflection decreases with increasing film thickness and approaches the bulk value of ∼0.413 nm in the films thicker than 300 nm. Cross-sectional transmission electron microscopy images reveal that the a-domain fraction and period increase with increasing film thickness. The re...

Niobium doped TiO2: Intrinsic transparent metallic anatase versus highly resistive rutile phase

We report on the structural, electrical, and optical properties of 5% niobium doped TiO2 thin films grown on various substrates by pulsed laser deposition. The epitaxial anatase Nb:TiO2 film on LaAlO3 is shown to be an intrinsic transparent metal and its metallic property arises from Nb substitution into Ti site as evidenced by the Rutherford backscattering channeling result. In contrast, the rutile Nb:TiO2 thin films show insulating behaviors with 2–3 orders higher room temperature electrical resistivity and ∼30 times lower mobility. A blueshift in the optical absorption edge is observed in both phases, though of differing magnitude.

In Situ Observation of Reversible Nanomagnetic Switching Induced by Electric Fields

We report direct observation of controlled and reversible switching of magnetic domains using static (dc) electric fields applied in situ during Lorentz microscopy. The switching is realized through electromechanical coupling in thin film Fe(0.7)Ga(0.3)/BaTiO(3) bilayer structures mechanically released from the growth substrate. The domain wall motion is observed dynamically, allowing the direct association of local magnetic ordering throughout a range of applied electric fields. During application of approximately 7-11 MV/m electric fields to the piezoelectric BaTiO(3) film, local magnetic domains rearrange in the ferromagnetic Fe(0.7)Ga(0.3) layer due to the transfer of strain from the BaTiO(3) film. A simulation based on micromagnetic modeling shows a magnetostrictive anisotropy of 25 kPa induced in the Fe(0.7)Ga(0.3) due to the strain. This electric-field-dependent uniaxial anisotropy is proposed as a possible mechanism to control the coercive field during operation of an integrated magnetoelectric memory node.

Dependence of dielectric properties on internal stresses in epitaxial barium strontium titanate thin films

A series of heteroepitaxial BaxSr1−xTiO3 thin films with composition x=0.50 were deposited on (001) MgO substrates by pulsed-laser deposition. The thickness of the films was varied from 14 to 500 nm to produce a systematically decreasing level of in-plane tensile stresses. The microstructural and crystallographic features of the films were determined via transmission electron microscopy and x-ray diffraction. A theoretical treatment of the in-plane misfit strain as a function of film thickness is in agreement with the measured out-of-plane lattice parameters. Electrical measurements indicate a drop in the dielectric constant from 2350 for highly stressed thin films to 1700 for relaxed thicker films. The variation in the dielectric constant with the misfit strain is in accordance with a thermodynamic model developed. The relationship between the dielectric constant and electric field is also described by extending the thermodynamic model and taking the effect of electric field into account. A new definitio...

Growth of GaN nanowires by direct reaction of Ga with NH3

Semiconducting, single crystal wurtzite GaN nanowires have been grown by direct reaction of metal Ga with NH3 in a tube furnace. This paper discusses the growth mechanism. Nanowires grow only between 8251C and 925 o C. Their diameters vary between 20 and 150 nm and depend directly on temperature and NH3 flow rate. Wires as long as 500mm have been fabricated; once wires have formed, their length increases directly with time in the reactor. There are three different stages in the process, each of which has its own mechanism. First, a nearly amorphous GaN matrix forms, followed by growth of hillocks of thin GaN platelets. Finally, nanowires emerge from the edges of the platelets in characteristic directions. This analysis can be used as a guide for controlling GaN wire diameters and lengths. Strategies for growth of thinner and thicker nanowires are suggested. Thicker cylindrical structures denoted as rods grow from the face of the platelets. Description of their growth mechanism requires further study. r 2001 Elsevier Science B.V. All rights reserved.