L. Thevenard

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer.

Irreversible magnetization switching using surface acoustic waves

An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In preces-sional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magnetic anisotropy parameters through inverse magneto-striction. The SAW triggers precession, and eventually reversal. Using the micromagnetic parameters of a fully characterized layer of the magnetic semiconductor (Ga,Mn)(As,P), we then show that there is a large window of accessible experimental conditions (SAW amplitude/wave-vector, field amplitude/orientation) allowing irreversible switching. As this is a resonant process, the influence of the detuning of the SAW frequency to the magnetic systems eigenfrequency is also explored. Finally, another-non-resonant-switching mechanism is briefly contemplated, and found to be applicable to (Ga,Mn)(As,P): SAW-assisted domain nucleation. In this case, a small perpendicular field is applied opposite the initial magnetization and the passage of the SAW lowers the domain nucleation barrier.

Surface-acoustic-wave-driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers

Surface acoustic waves (SAW) were generated on a thin layer of the ferromagnetic semiconductor (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the layer, making it an ideal test material for the dynamic control of magnetization via magnetostriction. The amplitude and phase of the transmitted SAW during magnetic field sweeps showed a clear resonant behavior at a field close to the one calculated to give a precession frequency equal to the SAW frequency. A resonance was observed from 5 to 85 K, just below the Curie temperature of the layer. A full analytical treatment of the coupled magnetization/acoustic dynamics showed that the magnetostrictive coupling modifies the elastic constants of the material and accordingly the wave-vector solution to the elastic wave equation. The shape and position of the resonance were well reproduced by the calculations, in particular the fact that velocity (phase) variations resonated at lower fields than the acoustic attenuation variations. We suggest one reinterpret SAW-driven ferromagnetic resonance as a form of resonant, dynamic, delta-E effect, a concept usually reserved for static magnetoelastic phenomena.

Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains

The incorporation of Phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As template. For perpendicular easy axis, using magneto-optical imaging a self-organized pattern of up- and down-magnetized domains is observed for the first time in a diluted magnetic semiconductor. Combining Kerr microscopy, magnetometry and ferromagnetic resonance spectroscopy, the exchange constant and the domain wall width parameter are obtained as a function of temperature. The former quantifies the effective Mn-Mn ferromagnetic interaction. The latter is a key parameter for domain wall dynamics. The comparison with results obtained for (Ga,Mn)As/(Ga,In)As reveals the improved quality of the (Ga,Mn)As

Universal conductance fluctuations in epitaxial GaMnAs ferromagnets: dephasing by structural and spin disorder.

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Domain structure and magnetic anisotropy fluctuations in (Ga,Mn)As: Effect of annealing

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Voltage-controlled tunneling anisotropic magnetoresistance of a ferromagnetic p++-(Ga,Mn)As∕n+-GaAs Zener-Esaki diode

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Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory

layers regarding domain wall pinning, an increase of the domain wall width parameter and of the effective Mn-Mn spin coupling. However, at constant Mn doping, no significant increase of this coupling is found with increasing P concentration in the investigated range.

Magnetic patterning of (Ga,Mn)As by hydrogen passivation

Mesoscopic transport measurements reveal a large effective phase coherence length in epitaxial GaMnAs ferromagnets, contrary to usual 3d-metal ferromagnets. Universal conductance fluctuations of single nanowires are compared for epilayers with a tailored anisotropy. At large magnetic fields, quantum interferences are due to structural disorder only, and an unusual behavior related to hole-induced ferromagnetism is evidenced, for both quantum interferences and decoherence. At small magnetic fields, phase coherence is shown to persist down to zero field, even in presence of magnons, and an additional spin disorder contribution to quantum interferences is observed under domain walls nucleation.

Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)

We investigate the effect of post-growth annealing on the magnetic domain structure and magnetization reversal process of (Ga,Mn)As epilayers grown with tensile strain on a (Ga,In)As buffer. In the case of perpendicular magnetic easy-axis, annealing drastically changes the domain structure observed at magnetization reversal. In as-grown samples, strongly anisotropic domain growth is observed. Dendritic-like domain expansion with guided branching along the directions results in a grid-like pattern. This is tentatively attributed to spatial fluctuations of the uniaxial anisotropy constant, correlated with the cross-hatch pattern. In annealed samples, domain wall motion is much more isotropic, which likely results from a decrease of the relative amplitude of the uniaxial anisotropy fluctuations with increasing carrier density. However domain wall motion is impeded by linear or slightly curved defects, hundreds of micrometers long, and point-like pinning centers. The density of nucleation centers for magnetization reversal strongly decreases upon annealing.