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Featured researches published by L. Treitinger.


international zurich seminar on digital communications | 1990

Silicon bipolar circuits for gigahertz communication systems mixers, multipliers, modulators

P. Weger; L. Treitinger; E. Bertagnolli; G. Schultes; E. Bonek

Key elements for digital communication systems have been built on the basis of integrated silicon bipolar circuits. Experimental results are presented on mixers and multipliers suitable for operation for DC up to 10 GHz and above, as well as PSK (phase shift keying) modulators for frequencies up to 5 GHz and the corresponding demodulators. These elements have been obtained by modifications of elementary logic circuits. These elementary logic and analog circuits are performance demonstrators included in test chips for the development of high-speed silicon bipolar technologies, which are now in production with 2- mu m lithography and in preproduction with feature sizes less than 2 mu m. These technologies are well suited for high complexities of about 50 K gates and beyond. Thus, complex communication systems can easily be integrated on a single chip.<<ETX>>


international zurich seminar on digital communications | 1990

Silicon bipolar technology-a versatile base for high-speed communication circuits

L. Treitinger; E. Bertagnolli; K. Ehinger; J. Popp; M. Reisch; H. Kabza; R. Schreiter; I. Kerner; R. Kopl; H. Weidlich; J. Weng; P. Weger; H. von Philipsborn; H.M. Rein

The technical requirements on versatile IC technologies include speed capability for operation in the 10 GHz range and above; low power consumption in the 1-5 GHz range for possible battery power supply; capability of high-precision analog functions at ultimate speed; uniformity and reliability for mass production; and capability of integration of complex systems on single chips. An overview is presented on the extent to which these technical requirements can be met by silicon bipolar technologies in the present and the near future. Particular attention is given to silicon bipolar transistors as fast integrated optical detectors and to the properties of demonstration circuits. It is concluded that most of the demands of future information systems can be fulfilled with existing silicon bipolar technologies.<<ETX>>


Archive | 1980

4.2.3.1.2 Phase diagrams and thermodynamic properties

H. von Philipsborn; M. Rubinstein; L. Treitinger


Archive | 1980

4.2.3.3.7 Raman and IR phonon spectra

H. von Philipsborn; M. Rubinstein; L. Treitinger


Acta Crystallographica Section A | 1984

Grain size, texture and doping profiles of polycrystalline silicon interfaces

H. Eichermüller; L. Treitinger; H. von Philipsborn


Archive | 1980

4.2.2.2.1.2 Cu-Cr spinels with anion substitutions

H. von Philipsborn; L. Treitinger


Archive | 1980

4.2.3.3.3 Band gap and level schemes

H. von Philipsborn; M. Rubinstein; L. Treitinger


Archive | 1980

4.2.1.10 References for 4.2.1.0. - 4.2.1.9

H. von Philipsborn; L. Treitinger


Archive | 1980

4.2.3.2.1 Ordering temperatures and exchange interaction

H. von Philipsborn; M. Rubinstein; L. Treitinger


Archive | 1980

4.2.1.8.1 Crystallographic properties

H. von Philipsborn; L. Treitinger

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