L. V. Yashina

Tolerance of topological surface states towards magnetic moments: Fe on Bi2Se3.

We study the effect of Fe impurities deposited on the surface of the topological insulator Bi(2)Se(3) by means of core-level and angle-resolved photoelectron spectroscopy. The topological surface state reveals surface electron doping when the Fe is deposited at room temperature and hole doping with increased linearity when deposited at low temperature (~8 K). We show that in both cases the surface state remains intact and gapless, in contradiction to current belief. Our results suggest that the surface state can very well exist at functional interfaces with ferromagnets in future devices.

Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water

The long-term stability of functional properties of topological insulator materials is crucial for the operation of future topological insulator based devices. Water and oxygen have been reported to be the main sources of surface deterioration by chemical reactions. In the present work, we investigate the behavior of the topological surface states on Bi2X3 (X = Se, Te) by valence-band and core level photoemission in a wide range of water and oxygen pressures both in situ (from 10(-8) to 0.1 mbar) and ex situ (at 1 bar). We find that no chemical reactions occur in pure oxygen and in pure water. Water itself does not chemically react with both Bi2Se3 and Bi2Te3 surfaces and only leads to slight p-doping. In dry air, the oxidation of the Bi2Te3 surface occurs on the time scale of months, in the case of Bi2Se3 surface of cleaved crystal, not even on the time scale of years. The presence of water, however, promotes the oxidation in air, and we suggest the underlying reactions supported by density functional calculations. All in all, the surface reactivity is found to be negligible, which allows expanding the acceptable ranges of conditions for preparation, handling and operation of future Bi2X3-based devices.

The Chemistry of Imperfections in N‑Graphene

Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material still remains an enigma. Here we demonstrate a method to handle N-impurities in graphene, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration. By applying photoemission spectroscopy and density functional calculations, we show that the electron doping effect of graphitic N is strongly suppressed by pyridinic N. As the latter is converted into the graphitic configuration, the efficiency of doping rises up to half of electron charge per N atom.

X-ray photoelectron studies of clean and oxidized α-GeTe(111) surfaces

Clean and oxidized (104–1015 L of O2) surfaces of α-GeTe have been investigated with x-ray photoelectron spectroscopy by using the synchrotron radiation facility BESSY II as well as an Al Kα source. To understand the first steps of oxidation, complementary quantum chemical calculations were performed. The cleaved surfaces of α-GeTe were found to be rumpled with (111) domains that can be related to the domain (twin) structure of the bulk. Both the Ge 3d and the Te 4d spectra of freshly cleaved surfaces exhibit at least three components, which are explained by a Ge or Te termination of the surface domains with possible contributions of a surface reconstruction. The surface oxidation starts at exposures of 104 L and proceeds via several steps. At low exposures, only changes in the Ge spectra are observed. Consequently, the first step of the reaction is associated with the formation of intermediate peroxidelike structures, wherein both oxygen atoms are bonded to germanium atoms. In the range of exposures between 1010 and 1015 L, a layer of a relatively stable oxidation product with the approximate stoichiometry Ge1+δ+4Te1−δ0O2(1+δ)2− is formed, which shows growth kinetics that obey a time-logarithmic law. At this stage, the peroxidelike structures are still present at the oxide/crystal interface. Once the oxidized layer exceeds a thickness of ≈2.5 nm at ∼1013 L, a transformation of the Te0 state into the Te+4 state is observed at the surface of the oxide layer. The final oxidation product can be described as mGeO2×nTeO2.Clean and oxidized (104–1015 L of O2) surfaces of α-GeTe have been investigated with x-ray photoelectron spectroscopy by using the synchrotron radiation facility BESSY II as well as an Al Kα source. To understand the first steps of oxidation, complementary quantum chemical calculations were performed. The cleaved surfaces of α-GeTe were found to be rumpled with (111) domains that can be related to the domain (twin) structure of the bulk. Both the Ge 3d and the Te 4d spectra of freshly cleaved surfaces exhibit at least three components, which are explained by a Ge or Te termination of the surface domains with possible contributions of a surface reconstruction. The surface oxidation starts at exposures of 104 L and proceeds via several steps. At low exposures, only changes in the Ge spectra are observed. Consequently, the first step of the reaction is associated with the formation of intermediate peroxidelike structures, wherein both oxygen atoms are bonded to germanium atoms. In the range of exposures betw...

Phase relations in pseudobinary systems of germanium, tin, and lead chalcogenides

Available experimental data for the GeTe-SnTe, GeTe-PbTe, SnTe-PbTe, PbS-PbSe, PbS-PbTe, and PbSe-PbTe systems are critically evaluated, and their T-x phase diagrams are calculated. The results indicate that the phase diagrams of these systems can be described in terms of a four-parameter model for the excess Gibbs energy. The effects of cation and anion substitutions on the topology of phase diagrams and excess Gibbs energy are analyzed in relation to the character of chemical bonding in constituent chalcogenides.

Photoemission of Bi2Se3 with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?

Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50-70 eV) with linear or circular polarization indeed probe the initial-state spin texture of Bi2Se3 while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.

Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi1−xMnx)2Se3

Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi1−xMnx)2Se3 is a prototypical magnetic topological insulator with a pronounced surface band gap of ∼100 meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn doping does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection.

The use of galvanic displacement in synthesizing Pt(Cu) catalysts with the core-shell structure

The formation of a Pt(Cu) bimetallic catalyst on the carbon support by galvanic displacement of copper electrodeposits with platinum (PtCl62− as the displacing agent) is systematically studied. Composition, structure, and electrocatalytic properties of samples corresponding to different stages of copper displacement are analyzed. For substantially long displacement times, the formation of stable Pt(Cu)st particles with the atomic ratio Pt: Cu ≈ 7: 3 is observed. The Pt(Cu)st/C electrodes are shown to be close to the Pt/C electrode as regards the adsorption of hydrogen and copper atoms and the specific activity in methanol oxidation (with 0.5 M H2SO4 as the supporting electrolyte). Such electrocatalytic behavior of Pt(Cu)st particles makes it possible to infer the formation of the “core(Pt, Cu)-shell(Pt)” structure, as confirmed by the XPS data.

Carbon nanowalls: the next step for physical manifestation of the black body coating

The optical properties of carbon nanowall (CNW) films in the visible range have been studied and reported for the first time. Depending on the film structure, ultra-low total reflectance up to 0.13% can be reached, which makes the CNW films a promising candidate for the black body-like coating, and thus for a wide range of applications as a light absorber. We have estimated important trends in the optical property variation from sample to sample, and identified the presence of edge states and domain boundaries in carbon nanowalls as well as the film mass density variation as the key factors. Also we demonstrated that at much lower film thickness and density than for a carbon nanotube forest the CNWs yield one order higher specific light absorption.

Controlled assembly of graphene-capped nickel, cobalt and iron silicides

The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved.