L. Vlasukova

Track formation in germanium crystals irradiated with superhigh-energy ions

Damage production was studied in 710 MeV Bi and 1.3 GeV U ions irradiated single-crystalline germanium by means of transmission electron microscopy and selective chemical etching. The formation of discontinuous tracks was registered in the depth region of high electronic energy loss of the incident ions. The observed features of discontinuous track formation in Ge are described within the fluctuation model of track formation.

Ion-Beam Synthesis of InSb Nanocrystals in Si Matrix

The results of structural and optical investigation of crystalline Si with embedded InSb nanocrystals are reported. These nanocrystals were synthesized in silicon matrix by means of high-fluence “hot” implantation of Sb and In ions followed by thermal treatment. TEM gives an evidence of nanocrystal formation in implanted and annealed samples as well as an existence of microtwins and dislocation-type defects and substantial residual mechanical strains. We have identified nanocrystals as InSb from RS data. Mechanical strains in “silicon – InSb nanocrystals” system have been evaluated, too.