Laurent Vivien

Roadmap on silicon photonics

Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with predictions of where the field is destined to reach.

Optical microcavity with semiconducting single-wall carbon nanotubes

We report studies of optical Fabry-Perot microcavities based on semiconducting single-wall carbon nanotubes with a quality factor of 160. We experimentally demonstrate a huge photoluminescence signal enhancement by a factor of 30 in comparison with the identical film and by a factor of 180 if compared with a thin film containing non-purified (8,7) nanotubes. Furthermore, the spectral full-width at half-maximum of the photo-induced emission is reduced down to 8 nm with very good directivity at a wavelength of about 1.3 microm. Such results prove the great potential of carbon nanotubes for photonic applications.

Highly sensitive refractive index sensing by fast detuning the critical coupling condition of slot waveguide ring resonators

We experimentally investigate refractive index sensing in silicon slot waveguide ring resonators by the detection of the giant shift of the ring transmission spectrum envelope enabled by the following specific conditions: the slot waveguide cross section as well as the ring couplers have been designed to lead to a V-shaped microring resonator spectrum modulated by the classical frequency comb and exhibiting quality factor peaks of 2000-6000 around λ=1.5u2009u2009μm. By tracking the spectrum envelope wavelength shift, sensitivity up to S=1,300u2009u2009nm per refraction index unit (RIU) is reported when the slots are filled by liquids with refraction index values close to 1.33.

High-quality photonic entanglement for wavelength-multiplexed quantum communication based on a silicon chip

We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400 pairs of entangled photons /s/MHz for 500 μW pump power, compatible with standard telecom dense wavelength division multiplexers. We demonstrate high-purity energy-time entanglement, i.e., free of photonic noise, with near perfect raw visibilities (> 98%) between various channel pairs in the telecom C-band. Such a compact source stands as a path towards more complex quantum photonic circuits dedicated to quantum communication systems.We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400 pairs of entangled photons /s/MHz for 500 μW pump power, compatible with standard telecom dense wavelength division multiplexers. We demonstrate high-purity energy-time entanglement, i.e., free of photonic noise, with near perfect raw visibilities (> 98%) between various channel pairs in the telecom C-band. Such a compact source stands as a path towards more complex quantum photonic circuits dedicated to quantum communication systems.

Analysis of silicon-on-insulator slot waveguide ring resonators targeting high Q-factors

Vertical slot waveguide micro-ring resonators in silicon photonics have already been demonstrated in previous works and applied to several schemes, including sensing and hybrid nonlinear optics. Their performances, first quantified by the reachable Q-factors, are still perceived to be restrained by larger intrinsic propagation losses than those suffered by simple Si wire waveguides. In this Letter, the optical loss mechanisms of slot waveguide micro-ring resonators are thoroughly investigated with a special focus on the coupler loss contribution that turns out to be the key obstacle to achieving high Q-factors. By engineering the coupler design, slotted ring resonators with a 50 μm radius are experienced with a loaded Q-factor up to 10 times improvement from Q=3,000 to Q=30,600. The intrinsic losses due to the light propagation in the bent slot ring itself are proved to be as low as 1.32±0.87u2009u2009dB/cm at λ=1,550u2009u2009nm. These investigations of slot ring resonators open high performance potentials for on-chip nonlinear optical processing or sensing in hybrid silicon photonics.

Sharp bends and Mach-Zehnder interferometer based on Ge-rich-SiGe waveguides on SiGe graded buffer.

The integration of germanium (Ge)-rich active devices in photonic integrated circuits is challenging due to the lattice mismatch between silicon (Si) and Ge. A new Ge-rich silicon-germanium (SiGe) waveguide on graded buffer was investigated as a platform for integrated photonic circuits. At a wavelength of 1550 nm, low loss bends with radii as low as 12 µm and Multimode Interferometer beam splitter based on Ge-rich SiGe waveguide on graded buffer were designed, fabricated and characterized. A Mach Zehnder interferometer exhibiting a contrast of more than 10 dB has been demonstrated.

Giant electro-optic effect in Ge/SiGe coupled quantum wells

Silicon-based photonics is now considered as the photonic platform for the next generation of on-chip communications. However, the development of compact and low power consumption optical modulators is still challenging. Here we report a giant electro-optic effect in Ge/SiGe coupled quantum wells. This promising effect is based on an anomalous quantum-confined Stark effect due to the separate confinement of electrons and holes in the Ge/SiGe coupled quantum wells. This phenomenon can be exploited to strongly enhance optical modulator performance with respect to the standard approaches developed so far in silicon photonics. We have measured a refractive index variation up to 2.3u2009×u200910−3 under a bias voltage of 1.5u2009V, with an associated modulation efficiency VπLπ of 0.046u2009V cm. This demonstration paves the way for the development of efficient and high-speed phase modulators based on the Ge/SiGe material system.

Ultra-wideband Ge-rich silicon germanium integrated Mach–Zehnder interferometer for mid-infrared spectroscopy

This Letter explores the use of Ge-rich Si0.2Ge0.8 waveguides on graded Si1-xGex substrate for the demonstration of ultra-wideband photonic integrated circuits in the mid-infrared (mid-IR) wavelength range. We designed, fabricated, and characterized broadband Mach-Zehnder interferometers fully covering a range of 3xa0μm in the mid-IR band. The fabricated devices operate indistinctly in quasi-TE and quasi-TM polarizations, and have an extinction ratio higher than 10xa0dB over the entire operating wavelength range. The obtained results are in good correlation with theoretical predictions, while numerical simulations indicate that the device bandwidth can reach one octave with low additional losses. This Letter paves the way for further realization of mid-IR integrated spectrometers using low-index-contrast Si1-xGex waveguides with high germanium concentration.

Graded SiGe waveguides with broadband low-loss propagation in the mid infrared

Mid-infrared (mid-IR) silicon photonics is expected to lead key advances in different areas including spectroscopy, remote sensing, nonlinear optics or free-space communications, among others. Still, the inherent limitations of the silicon-on-insulator (SOI) technology, namely the early mid-IR absorption of silicon oxide and silicon at λ~3.6 µm and at λ ~8.5 µm respectively, remain the main stumbling blocks that prevent this platform to fully exploit the mid-IR spectrum (λ ~2-20 µm). Here, we propose using a compact Ge-rich graded-index Si1-xGex platform to overcome this constraint. A flat propagation loss characteristic as low as 2-3 dB/cm over a wavelength span from λ = 5.5 µm to 8.5 µm is demonstrated in Ge-rich Si1-xGex waveguides of only 6 µm thick. The comparison of three different waveguides design with different vertical index profiles demonstrates the benefit of reducing the fraction of the guided mode that overlaps with the Si substrate to obtain such flat low loss behavior. Such Ge-rich Si1-xGex platforms may open the route towards the implementation of mid-IR photonic integrated circuits with low-loss beyond the Si multi-phonon absorption band onset, hence truly exploiting the full Ge transparency window up to λ ~15 µm.

Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band

In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (VπLπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 Vpp, compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gb ps.