Lawrence G. Pearce

Investigation of plasma process damage in a thick gate oxide, large geometry, process using protected devices

Plasma process induced damage is a major device issue. A non-uniform plasma can generate significant MOS gate damage and this damage is commonly reported on state-of-the-art thin oxides and small devices. This work will describe plasma damage observed on a thick gate, large geometry process. Protected devices were used to confirm plasma damage. Protected devices for study of damage along with issues with fuse protection are discussed. Blowing of fuses may be better than laser cutting and fuse protection of all device nodes may not be needed.