Le T.T. Phuong
University of Education, Winneba
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Featured researches published by Le T.T. Phuong.
Journal of Applied Physics | 2018
Chuong V. Nguyen; Nguyen N. Hieu; Do Muoi; C.A. Duque; E. Feddi; Hieu V. Nguyen; Le T.T. Phuong; Bui D. Hoi; Huynh V. Phuc
In this work, using the compact density matrix approach, we study the linear and nonlinear magneto-optical properties of monolayer molybdenum disulfide (MoS2) via an investigation of the absorption coefficients (MOACs) and refractive index changes (RICs). The results are presented as functions of photon energy and external magnetic field. Our results show that the MOACs and the RICs appear as a series of peaks in the inter-band transitions between Landau levels, while the intra-band transitions result in only one peak. Because of the strong spin-orbit coupling, the peaks caused by the spin-up and -down states are different. With the increase in the magnetic field, both MOACs and RICs give a blue-shift and reduce in their amplitudes. These results suggest a potential application of monolayer MoS2 in the optoelectronic technology, magneto-optical, valleytronic, and spintronic devices.In this work, using the compact density matrix approach, we study the linear and nonlinear magneto-optical properties of monolayer molybdenum disulfide (MoS2) via an investigation of the absorption coefficients (MOACs) and refractive index changes (RICs). The results are presented as functions of photon energy and external magnetic field. Our results show that the MOACs and the RICs appear as a series of peaks in the inter-band transitions between Landau levels, while the intra-band transitions result in only one peak. Because of the strong spin-orbit coupling, the peaks caused by the spin-up and -down states are different. With the increase in the magnetic field, both MOACs and RICs give a blue-shift and reduce in their amplitudes. These results suggest a potential application of monolayer MoS2 in the optoelectronic technology, magneto-optical, valleytronic, and spintronic devices.
Journal of Electronic Materials | 2018
Huynh V. Phuc; Vu V. Tuan; Nguyen N. Hieu; V. V. Ilyasov; Igor A. Fedorov; Bui D. Hoi; Le T.T. Phuong; Nguyen Van Hieu; E. Feddi; Chuong V. Nguyen
Using density functional theory, we have studied the structural, electronic and optical properties of two-dimensional graphene-like C2Ndocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}
Superlattices and Microstructures | 2017
Huynh V. Phuc; Nguyen N. Hieu; Bui D. Hoi; Le T.T. Phuong; Nguyen Van Hieu; Chuong V. Nguyen
Surface Science | 2018
Huynh V. Phuc; Nguyen N. Hieu; Bui D. Hoi; Le T.T. Phuong; Chuong V. Nguyen
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Superlattices and Microstructures | 2018
Nguyen N. Hieu; V. V. Ilyasov; Tuan V. Vu; N. A. Poklonski; Huynh V. Phuc; Le T.T. Phuong; Bui D. Hoi; Chuong V. Nguyen
Superlattices and Microstructures | 2018
Huynh V. Phuc; Nguyen N. Hieu; V. V. Ilyasov; Le T.T. Phuong; Chuong V. Nguyen
end{document} nanosheet under in-plane strains. Our results indicate that the C2Ndocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}
Physica E-low-dimensional Systems & Nanostructures | 2019
N.V.Q. Binh; Nguyen N. Hieu; Chuong V. Nguyen; Huynh V. Phuc; Bui D. Hoi; Le T.T. Phuong; Tran Cong Phong
Journal of Physics and Chemistry of Solids | 2019
N.V.Q. Binh; Bui D. Hoi; Doan V. Thuan; Nguyen N. Hieu; Chuong V. Nguyen; Huynh V. Phuc; Tong S. Tien; Nguyen T.T. Nhan; Nguyen Dinh Hien; Nguyen N. Anh; Le T. Dung; Le T.T. Phuong
hbox {C}_2hbox {N}
Chemical Physics | 2019
Doan Quoc Khoa; Duy Trinh Nguyen; Chuong V. Nguyen; Vo T.T. Vi; Huynh V. Phuc; Le T.T. Phuong; Bui D. Hoi; Nguyen N. Hieu
Optik | 2018
Doan Q. Khoa; Nguyen N. Hieu; Tran N. Bich; Le T.T. Phuong; Bui D. Hoi; Tran P.T. Linh; Quach K. Quang; Chuong V. Nguyen; Huynh V. Phuc
end{document} nanosheet is a semiconductor with a direct band gap of 1.70 eV at the equilibrium state opening between the highest valence band and lowest conduction band located at the Γdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}