Leah L. Kelly

Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface

Despite significant interest in hybrid organic/inorganic semiconductor interfaces, little is known regarding the fate of charge carriers at metal oxide interfaces, particularly on ultrafast time scales. Using core-hole clock spectroscopy, we investigate the ultrafast charge carrier dynamics of conductive ZnO films at a hybrid interface with an organic semiconductor. The adsorption of C60 on the ZnO surface strongly suppresses the ultrafast carrier delocalization and increases the charge carrier residence time from 400 attoseconds to nearly 30 fs. Here, we show that a new hybridized interfacial density of states with substantial molecular character is formed, fundamentally altering the observed carrier dynamics. The remarkable change in the dynamics sheds light on the fate of carriers at hybrid organic/inorganic semiconductor interfaces relevant to organic optoelectronics and provides for the first time an atomistic picture of the electronically perturbed near-interface region of a metal oxide.

Resonance and localization effects at a dipolar organic semiconductor interface

The image state manifold of the dipolar organic semiconductor vanadyl naphthalocyanine (VONc) on highly oriented pyrolytic graphite is investigated by angle-resolved two-photon photoemission (AR-TPPE) spectroscopy in the 0-1 monolayer regimes. Interfacial charge-transfer from the image potential state of clean graphite populates a near-resonant VONc anion level, identifiable by the graphite image potential state by its distinct momentum dispersion obtained from AR-TPPE. This affinity level is subject to depolarization by the neighboring molecules, resulting in stabilization of this state with coverage. Near a coverage of one monolayer, a hybrid image potential/anion state is also formed, showing progressive localization with coverage. Intensities for all these features develop rather differently with molecular coverage, pointing towards the different types of charge-transfer interactions at play at this interface.

Hybridization-Induced Carrier Localization at the C60/ZnO Interface

Electronic coupling and ground-state charge transfer at the C60 /ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

Electronic structure and dynamics of quasi-2D states of vanadyl naphthalocyanine on Au(111)†

We investigate the evolution of the interfacial electronic structure and dynamics of thin films of the organic semiconductor vanadyl naphthalocyanine on Au(111). Using angle-resolved two-photon photoemission, a comprehensive coverage- and excitation-energy-dependent characterisation of the electronic structure and the resulting dynamics of short-lived image potential resonances (IPRs) on Au(111) are presented. The study of these quasi-two-dimensional (quasi-2D) bands is enabled by molecular adsorption and reveals a significant lengthening of their lifetimes. The resonances remain, however, significantly coupled to the continuum of bulk bands of Au(111) even in the presence of the organic adsorbate, giving rise to Fano-like quantum interference and ‘intensity switching’ effects. Coupling to the continuum is also responsible for providing excitation pathways to the image potential manifold above and below optical resonance with the Shockley surface state. The organic semiconductor interface and quasi-2D bands investigated here provide a model for understanding the role of quantum effects in ultrafast dynamics of confined systems and at interfaces such as those that are relevant e.g. for interfacial charge-transfer processes in organic electronics.

Spectroscopy and control of near-surface defects in conductive thin film ZnO

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.