Leon Moszkowicz

Ion-beam-induced insulator deposition for chip circuit modification

Abstract As semiconductor manufacturing technologies become more complex and the number of metallization levels increases, the complexity of chip circuit modification using focused ion beam technology has also increased. The fabrication of an insulating film in a localized region to protect exposed metal greatly enhances the modification capability. It is often necessary to remove a portion of an overlying metal line to gain access to an underlying area of interest. To maintain functionality, this overlying metal line must be reconnected without shorting to underlying metallurgy. We have developed an ion-beam-induced process for circuit modification which uses an oxygen and siloxane precursor. Test structures were fabricated to evaluate the electrical integrity of these films. Results indicating sufficient dielectric strength for both memory and logic applications and the material analysis of this insulator film, are presented.

A novel Ccb and Rb reduction technique for high-speed SiGe HBTs

In this paper, we discuss a novel technique to reduce base resistance (R_b) and collector-base capacitance (C_cb) for higher F_max in high-speed SiGe HBTs. In order to reduce C_cb, we first located the origins of the different components of C_cb through AC extraction. Then we utilized scanning capacitance measurements (SCM) to examine the shape of the collector-base depletion. We then propose a method to reduce the extrinsic C_cb, namely by using reticle enhancement techniques to print a blocking oxide layer to inhibit boron outdiffusion. An additional benefit was the reduction of R_b by reducing the base link resistance.