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豊三川

Mitsubishi Chemical Corporation

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Archive | 2010

Method for producing nitride crystals, and production vessel and members

Yutaka Mikawa; 豊三川; Makiko Kiyomi; 真紀子清見; Yuji Kagamitani; 勇二鏡谷; Toru Ishiguro; 徹石黒; Yoshihiko Yamamura; 山村美彦

Archive | 2010

Method for producing nitride crystal, nitride crystal and apparatus for producing the same

Toru Ishiguro; Yuji Kagamitani; Makiko Kiyomi; Yutaka Mikawa; 豊三川; 真紀子清見; 徹石黒; 勇二鏡谷

Archive | 2014

GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL

Yusuke Tsukada; 悠介塚田; Shuichi Kubo; 久保秀一; Kazunori Kamada; 和典鎌田; Hideo Fujisawa; 英夫藤澤; Tatsuhiro Ohata; 達寛大畑; Hirotaka Ikeda; 宏隆池田; Hajime Matsumoto; 創松本; Yutaka Mikawa; 豊三川

Archive | 2013

窒化ガリウム基板、および、窒化物半導体結晶の製造方法

悠介塚田; 久保秀一; 和典鎌田; 英夫藤澤; 達寛大畑; 宏隆池田; 創松本; 豊三川

Archive | 2017

CONDUCTIVE C-PLANE GaN SUBSTRATE

豊三川; 英夫藤澤; 多恵望月; 秀郎浪田; 紳一郎川端

Archive | 2014

ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法

悠介塚田; 哲長尾; 和典鎌田; 田代雅之; 健史藤戸; 英夫藤澤; 豊三川; 哲治梶本; 崇深田

Archive | 2014

SUBSTRAT DE GaN AUTOPORTEUR, CRISTAL DE GaN, PROCÉDÉ DE PRODUCTION DE MONOCRISTAL DE GaN ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF À SEMI-CONDUCTEUR

Satoru Nagao; 哲長尾; Yusuke Tsukada; 悠介塚田; Kazunori Kamada; 和典鎌田; Shuichi Kubo; 久保秀一; Hirotaka Ikeda; 宏隆池田; Kenji Fujito; 健史藤戸; Hideo Fujisawa; 英夫藤澤; Yutaka Mikawa; 豊三川; Tae Mochizuki; 多恵望月

Archive | 2014

Crystal of nitride of group-13 metal on periodic table, and method for producing same

豊三川; 秀郎浪田; 宏隆池田; 和典鎌田; 英夫藤澤; 厚彦小島

Archive | 2012

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND SEED USED THEREFOR

Hideo Fujisawa; 英夫藤澤; Yutaka Mikawa; 豊三川; Kazunori Kamata; 和典鎌田

Archive | 2012

Method for producing regenerated raw material, method for producing nitride crystal and nitride crystal

Hideo Fujisawa; 英夫藤澤; Yutaka Mikawa; 豊三川; Kazunori Kamata; 和典鎌田

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