Li Yi-Gang

High-Power Er3+/Yb3+ Codoped Double-Cladding Fibre Amplifier with More Than 2 W Output Power

A high-power Er3+/Yb3+-codoped double-cladding all-fibre amplifier was successfully demonstrated and experimentally investigated. The amplifier could be operated with a maximum output power of 2.18 W and 2.11 W at 1541 nm and 1550 nm wavelengths, respectively, when the maximum pump power was 6.07 W. The power conversion efficiency was up to 35.6% and 34.4% at the two wavelengths, respectively. The output power and the gain were greater than 2.00 W and 20.0 dB, respectively, in the wavelength range from 1539 nm to 1565 nm for 20.0 mW input signal power. The gain fluctuation and the noise figure around 1550 nm wavelength were less than 0.3 dB and 6.0 dB, respectively.

Performance Improvement of Distributed and Discrete Raman Amplifiers with a Fibre Loop Mirror

We use a fibre loop mirror to reflect the residual pump power (RPP) into the fibre for solving the problems of the RPP in Raman amplifiers. The experimental results show that the novel bi-directional pumping scheme without adding extra pump lasers is effective, and higher gain and lower noise are obtained for both the distributed and the discrete Raman amplifiers.

Experimental and Numerical Analysis of a Two-Order Cascaded Raman Fibre Laser

A two-order cascaded Raman fibre laser based on GeO2-SiO2 fibre and fibre Bragg gratings is fabricated. Output power 309 mW of the second Stokes light around 1176.2 nm is obtained with a slope efficiency of 45.3%. The experimental results agree well with the simulation results obtained by using the double-pass model.

Modulation Spectroscopy of GaAs Covered by InAs Quantum Dots

Contactless: electroreflectance has been employed at room temperature to study the Fermi level pinning at undoped-n(+) GaAs surfaces covered by 1.6 and 1.8 monolayer (ML) InAs quantum dots (QDs). It is shown that the 1.8 ML InAs QD moves the Fermi level at GaAs surface to the valence band maximum by about 70 meV compared to bare GaAs, whereas 1.6 ML InAs on GaAs does not modify the Fermi level, It is confirmed that the modification of the 1.8 ML InAs deposition on the Fermi level at GaAs surface is due to the QDs, which are surrounded by some oxidized InAs facets, rather than the wetting layer.

Yb3+-Doped Double-Clad Fibre Laser Pumped by Rectangular Inner Cladding

A novel Yb3+-doped double-clad silica fibre with rectangular inner cladding was designed and developed by using the modified chemical vapour deposition process, solution-doping and optical machining all together. The dimensions of the inner cladding are 100×70 µm, and Yb3+-doped concentration in the core is about 0.24 wt.%. The operation of the fibre laser pumped by inner cladding is reported. The threshold of the laser is 34 mW. When the pump power launched is 141 mW, the laser output is 84 mW at the wavelength 1075.6 nm, and the slope efficiency is 77%.