Liao Huailin

A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation

In this paper, a complementary metal-oxide semiconductor (CMOS)-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon (SGPS) trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications.

The simulation analysis of cross-talk behavior in SOI mixed-mode integrated circuits

With the two-dimensional (2D) TMA medici simulator, the systematic analysis of cross-talk behavior is presented for different SOI mixed-mode integrated circuits such as PD (partially-depleted), FD (fully-depleted) and BC (body-contacted) structures. It is found that the substrate-grounded SOI structure can lower the noise coupling to a large extent compared to the substrate-floating one. Besides, the efficiency of different strategies for reducing cross-talk such as trench isolation, capacitive guard ring and distance separating is also investigated. The results are very important for evaluating cross-talk effects in low-noise coupling SOI mixed-mode ICs.

Microelectronics technologies in renewable energy internet

Renewable energy internet proposes five requirements for electronic system: efficiency, safety, reliability, convenience, extensiveness. In order to achieve the above requirements, renewable energy internet demands a multi-disciplinary, multi-faceted, multi-level innovation. Microelectronics technology will permeate all levels of renewable energy internet, performing as one of the important supporting technologies of renewable energy internet. This paper will focus on solid state transformers, distributed energy storage technology, information acquisition chip technology, communications chip technology, describing the special requirements, technical challenges, trend of development of microelectronics in renewable energy internet.

A closed-form thermal noise model of SOI MOSFETs for low noise application

The authors present a closed-form thermal noise model by incorporating the energy transport theory for SOI MOSFETs. This incorporation easily solves the problems facing the present noise models and presents an accurate and analytical thermal noise expression. Meanwhile, a minimum noise value at a certain drain current (I/sub opt/) can be analytically calculated with this model, which is very crucial for the design of low-noise IC such as low noise amplifiers (LNA). Due to its simplicity, the model can be easily implemented into existing circuit simulators such as SPICE.