Liu Yu-Min

Zero dispersion wavelength and dispersion slope control of hollow-core photonic bandgap fibres

This paper investigates the zero dispersion wavelength and dispersion slope control of hollow-core photonic bandgap fibres (PBGFs) by using a full-vector finite element method. By simulation we found that theoretically the zero dispersion wavelength can be tailored by respectively changing the rounded diameter of air holes, pitch, refractive index, normalized thickness of core rings, and hole diameter to pitch ratio. At the same time the tailoring of dispersion slope can also be realized by changing the rounded diameter of air holes or pitch or normalized thickness of core rings. To illustrate the reasonability of fibre designs, this paper also gives the variance of normalized interface field intensity which measures the scattering loss relatively versus wavelength for different designs. From the viewpoint of loss, varying the rounded diameter and the thickness of core ring could shift zero wavelength but it is difficult to get the required parameters within so tiny range in practical drawing of PBGFs, on the other hand, it is possible in practice to respectively alter the pitch and refractive index to shift zero wavelength. But varying hole diameter to pitch ratio is not worthwhile because they each induce large increase of loss and narrowness of transmission bandwidth. The zero dispersion wavelength can be engineered by respectively varying the rounded diameter of air holes, pitch, refractive index, and normalized thickness of core rings without incurring large loss penalties.

Self-organized GaN/A1N hexagonal quantum-dots: strain distribution and electronic structure

This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AIN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AIN system are calculated by solving a three-dimension effective mass Shrodinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.

Electronic Structure and Optical Properties of Antimony-Doped SnO2 from First-Principle Study

A first-principles study has been performed to calculate the electronic and optical properties of the SbxSn1−xO system. The simulations are based upon the method of generalized gradient approximations with the Perdew—Burke—Ernzerhof form in the framework of density functional theory. The supercell structure shows a trend from expanding to shrinking with the increasing Sb concentration. The increasing Sb concentration induces the band gap narrowing. Optical transition has shifted to the low energy range with increasing Sb concentration. Other important optical constants such as the dielectric function, reflectivity, refractive index, and electron energy loss function for Sb-doped SnO2 are discussed. The optical absorption edge of SnO2 doped with Sb also shows a redshift.

Novel Propagation Properties of Total Internal Reflection Photonic Crystal Fibres with Rhombic Air Holes

We investigate the propagation properties of a multi-layer photonic crystal fiber with novel rhombic air holes using the finite element method, and calculate the dependence of the propagation properties on the wavelength in the fiber with different geometrical structural parameters, including the internal angle and the external arrangement of the rhombic air holes. Optimizing these parameters, we design a photonic crystal which exhibits both a small dispersion value and low loss near the wavelength of 1.55μm.

The strain relaxation of InAs/GaAs self-organized quantum dot

This paper presents a detailed analysis of the dependence of degree of strain relaxation of the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently shaped quantum dots arranged with different transverse periods are simulated in this analysis. It investigates the total residual strain energy that stored in the quantum dot and the substrate for all kinds of quantum dots with the same volume, as well as the dependence on both the aspect ratio and transverse period. The calculated results show that when the transverse period is larger than two times the base of the quantum dots, the influence of transverse periods can be ignored. The larger aspect ratio will lead more efficient strain relaxation. The larger angle between the faces and the substrate will lead more efficient strain relaxation. The obtained results can help to understand the shape transition mechanism during the epitaxial growth from the viewpoint of energy, because the strain relaxation is the main driving force of the quantum dots self-organization.

Electronic Structure and Optical Properties of Zinc-Blende InxGa1−xNyAs1−y by a First-Principles Study

Electronic structure and optical properties of the zinc-blende InxGa1−xNyAs1−y system are calculated from the first-principles. Some relative simulations are performed using CA-PZ form of local density approximation in the framework of density functional theory. The supercell of intrinsic GaAs is calculated and optimized by using different methods, and the LDA-CA-PZ gives the most stable structure. The band gap of InxGa1−xAs tends to decrease with the increasing In concentration. For the case of In0.0625Ga0.9375NyAs1−y, the band gap will show slight difference when N concentration is larger than 18.75%. The optical transition of In dopant in GaAs exhibits a red shift, while it is a blue shift for the N dopant in InGaAs. Besides, dielectric function, reflectivity, refractive index and loss function in different doping model of InxGa1−xNyAs1−y are also discussed.

Approximate calculation of electronic energy levels of axially symmetric quantum dot and quantum ring by using energy dependent effective mass

Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrodinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail.

The influences of thickness of spacing layer and the elastic anisotropy on the strain fields and band edges of InAs/GaAs conical shaped quantum dots

Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges (both conduction band and valence band) of the InAs/GaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronic devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.

An improved forward/backward spatial smoothing Root-MUSIC algorithm based on signal decorrelation

The traditional Root-MUSIC algorithm has a weak ability for the extraction of coherent sources. In this paper, an improved forward/backward spatial smoothing Root-MUSIC Algorithm is proposed. By reconstructing and weighting the covariance matrix of the uniform linear array and the subarrays according to certain rules, the modified algorithm could provide a better performance in direction of arrival estimation of coherent sources than the standard. The simulations are given in order to validate the validity of the proposed method.

Electronic structures of stacked layers quantum dots: influence of the non-perfect alignment and the applied electric field

Electronic structures of the artificial molecule comprising two truncated pyramidal quantum dots vertically coupled and embedded in the matrix are theoretically analysed via the finite element method. When the quantum dots are completely aligned, the electron energy levels decrease with the horizontally applied electric field. However, energy levels may have the maxima at non-zero electric field if the dots are staggered by a distance of several nanometers in the same direction of the electric field. In addition to shifting the energy levels, the electric field can also manipulate the electron wavefunctions confined in the quantum dots, in company with the non-perfect alignment.