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Featured researches published by Lucas Orona.


npj Quantum Information | 2017

High-fidelity entangling gate for double-quantum-dot spin qubits

John M. Nichol; Lucas Orona; Shannon Harvey; Saeed Fallahi; Geoffrey C. Gardner; Michael J. Manfra; Amir Yacoby

Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 109 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of ~ 99%, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.Quantum computing: high-fidelity two-qubit entangling gateScientists have invented a new way to entangle electron spins. Entanglement, or “spooky action at a distance,” is one of the key requirements for a universal quantum computer, because it enables the transfer of information between quantum bits, or qubits. For qubits consisting of electron spins trapped in semiconductors, the Coulomb interaction between electrons can be harnessed to create entanglement. In this approach, however, the coherence of the individual spins is susceptible to spurious charge noise in the semiconductor. Amir Yacoby and colleagues at Harvard University and Purdue University overcame this challenge by using a large magnetic field gradient in a double-quantum-dot spin qubit to suppress the effects charge noise. By mitigating charge-noise-induced decoherence, the team demonstrated a two-qubit entangling gate fidelity of 90%. This high-fidelity entangling operation marks a significant milestone for spin qubits and points the way toward a scalable high-fidelity spin-based quantum computer.


Physical Review B | 2018

Coupling two spin qubits with a high-impedance resonator

Shannon Harvey; Charlotte G. L. Bøttcher; Lucas Orona; Stephen D. Bartlett; Andrew C. Doherty; Amir Yacoby


Physical Review B | 2018

Readout of singlet-triplet qubits at large magnetic field gradients

Lucas Orona; John M. Nichol; Shannon Harvey; Charlotte G. L. Bøttcher; Saeed Fallahi; Geoffrey C. Gardner; Michael J. Manfra; Amir Yacoby


Bulletin of the American Physical Society | 2018

Coupling Two Spin Qubits with a High-Impedance Resonator

Shannon Harvey; Charlotte G. L. Bøttcher; Lucas Orona; Stephen D. Bartlett; Andrew C. Doherty; Amir Yacoby


Bulletin of the American Physical Society | 2018

Scalable Spin-Qubit Device with a High Impedance Resonator

Charlotte Boettcher; Shannon Harvey; Lucas Orona; Amir Yacoby


Bulletin of the American Physical Society | 2014

Electrically tunable optical emitter graphene coupling

Lucas Orona; Klaas-Jan Tielrooij; Pablo Jarillo-Herrero


Bulletin of the American Physical Society | 2013

High mobility topological insulator Bi2Se3 exfoliated devices with hexagonal Boron Nitride dielectrics

Hadar Steinberg; Valla Fatemi; Lucas Orona; Javier Sanchez-Yamagishi; Kenji Watanabe; Takashi Taniguchi; Pablo Jarillo-Herrero


Bulletin of the American Physical Society | 2013

Transport and Capacitance Measurements of Bi2Se3 Devices

Valla Fatemi; Hadar Steinberg; Ferhat Katmis; Benjamin Hunt; Lucas Orona; Jagadeesh S. Moodera; Pablo Jarillo-Herrero


Bulletin of the American Physical Society | 2012

Fabrication of Bismuth Selenide Topological Insulating Samples

Lucas Orona; Hadar Steinberg; Valla Fatemi; Ferhat Katmis; Jagadeesh S. Moodera; Pablo Jarillo-Herrero


Bulletin of the American Physical Society | 2012

Vacancy Reduction, Structural and Electronic Studies of Epitaxial Films of Topological Insulators

Ferhat Katmis; Valla Fatemi; Hadar Steinberg; Lucas Orona; Peng Wei; Pablo Jarillo-Herrero; Jagadeesh S. Moodera

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Pablo Jarillo-Herrero

Massachusetts Institute of Technology

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Valla Fatemi

Massachusetts Institute of Technology

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Hadar Steinberg

Weizmann Institute of Science

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Ferhat Katmis

Massachusetts Institute of Technology

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Jagadeesh S. Moodera

Massachusetts Institute of Technology

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Javier Sanchez-Yamagishi

Massachusetts Institute of Technology

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