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Featured researches published by Luo Qing.


Acta Physico-chimica Sinica | 2006

Base-induced Bronsted acid sites on dealuminated HY zeolite: A solid-state NMR spectroscopy study

Hu Wei; Luo Qing; Li Shen-Hui; Shen Wan-Ling; Yue Yong; Deng Feng

Using trimethylphosphine(TMP) and d(5)-pyridine (deuterated pyridine) as the basic probe molecules, the concentrations of Bronsted acid sites on both HY zeolite and dealuminated HY zeolite have been quantitatively determined using solid-state H-1 and P-31 magic-angle spinning (MAS) NMR. After the adsorption of the probe molecules, the concentration of Bronsted acid sites on the dealuminated HY zeolite increases by about 25%, whereas the parent HY sample remains almost unchanged. The increase in the concentration of Bronsted acid sites is due to the appearance of base-induced Bronsted acid sites in the dealuminated HY zeolite. The terminal SiOH in the vicinity of the aluminum atom is induced to form a bridging hydroxyl group (SiOHAl) in the presence of the basic probe molecules. The mechanism of formation of the induced Bronsted acid sites has also been discussed.


Chinese Physics Letters | 2015

Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

Liu Hongtao; Yang Bao-he; Lv Hangbing; Xu Xiaoxin; Luo Qing; Wang Guoming; Zhang Meiyun; Long Shibing; Liu Qi; Liu Ming

We investigate the effect of the formation process under pulse and dc modes on the performance of one transistor and one resistor (1T1R) resistance random access memory (RRAM) device. All the devices are operated under the same test conditions, except for the initial formation process with different modes. Based on the statistical results, the high resistance state (HRS) under the dc forming mode shows a lower value with better distribution compared with that under the pulse mode. One of the possible reasons for such a phenomenon originates from different properties of conductive filament (CF) formed in the resistive switching layer under two different modes. For the dc forming mode, the formed filament is thought to be continuous, which is hard to be ruptured, resulting in a lower HRS. However, in the case of pulse forming, the filament is discontinuous where the transport mechanism is governed by hopping. The low resistance state (LRS) can be easily changed by removing a few trapping states from the conducting path. Hence, a higher HRS is thus observed. However, the HRS resistance is highly dependent on the length of the gap opened. A slight variation of the gap length will cause wide dispersion of resistance.


Acta Physico-chimica Sinica | 2002

Synthesis of Vinyl-functionalized MSU-X Silicates

Gong Yanjun; Li Zhihong; Wu Dong; Sun Yuhan; Deng Feng; Luo Qing; Yue Yong

Vinyl-functionalized MSU-X silicates were prepared by one-pot synthesis methodology at the presence of Tx-15 and AEO(9) surfactants respectively. The solids were characterized by XRD, FT-IR, Si-29 MASNMR, HRTEM, SEM, N-2 physisorption techniques. The surface morphology and textural properties of such materials varied with the synthesis mechanism and content of vinyl groups in the channel. The effects of the organic groups on the modified MSU-2 were investigated carefully. The vinyl-modified mesopore with 10% (x) VTES templated by AEO(9) was of 3.1 nm. pore diameter, but that templated by Tx-15 displayed a bimodal mesoporous channels, in which the smaller pore size was about 3 nm, while the bigger one was in the range of 40 similar to 46 nm.


Archive | 2013

Auxiliaries-added replacement cooking process of bamboo materials

Li Peiyi; Zhang Meiyun; Xia Xinxing; Lin Chuntao; Li Jinbao; Yin Xuefeng; Luo Qing; Wu Pan


Archive | 2017

SELECTOR FOR USE IN BIPOLAR RESISTIVE MEMORY AND MANUFACTURING METHOD FOR SELECTOR

Liu Ming; Luo Qing; Xu Xiaoxin; Lv Hangbing; Long Shibing; Liu Qi


Archive | 2017

SELF-GATING RESISTIVE STORAGE DEVICE AND METHOD FOR FABRICATION THEREOF

Lv Hangbing; Liu Ming; Xu Xiaoxin; Luo Qing; Liu Qi; Long Shibing


Archive | 2017

SELECTION DEVICE FOR USE IN BIPOLAR RESISTIVE MEMORY AND MANUFACTURING METHOD THEREFOR

Liu Ming; Luo Qing; Xu Xiaoxin; Lv Hangbing; Long Shibing; Liu Qi


Archive | 2017

Selector for bipolarity resistive random access memory and preparation method for the same

Liu Ming; Luo Qing; Xu Xiaoxin; Lyu Hangbing; Long Shibing; Liu Qi


Yixue Yanjiusheng Xuebao | 2016

サイトカインにより誘導されたキラー細胞とヒト肺腺癌A549およびA549/DDP細胞の共培養におけるサイトカインの変化【JST・京大機械翻訳】

Li Fei; Li Ning; Li Peiyi; Yue Yun; Zhang Chuanqin; Wang Xue; Luo Qing


Archive | 2016

Pulse parameter testing system based on two-terminal device

Liu Ming; Luo Qing; Xu Xiaoxin; Lyu Hangbing; Long Shibing; Liu Qi

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Liu Ming

Chinese Academy of Sciences

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Liu Qi

Chinese Academy of Sciences

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Long Shibing

Chinese Academy of Sciences

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Xu Xiaoxin

Chinese Academy of Sciences

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Lv Hangbing

Chinese Academy of Sciences

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Zhang Meiyun

Shaanxi University of Science and Technology

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Li Jinbao

Shaanxi University of Science and Technology

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Deng Feng

Chinese Academy of Sciences

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Lyu Hangbing

Chinese Academy of Sciences

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Yue Yong

Chinese Academy of Sciences

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