M. A. Reshchikov

A comprehensive review of ZnO materials and devices

The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

Surface photovoltage in undoped n-type GaN

Steady-state and transient surface photovoltage (SPV) in undoped GaN is studied in vacuum and air ambient at room temperature and 400 K with a Kelvin probe. The results are explained within a phenomenological model accounting for the accumulation of photogenerated holes at the surface, capture of free electrons from the bulk over the near-surface potential barrier, and emission of electrons from surface states into the bulk. Simple analytical expressions are obtained and compared with experimental results. In particular, the proposed model explains the logarithmic decay of the SPV after stopping illumination. Internal and external mechanisms of the SPV are discussed in detail. It is shown that an internal mechanism dominates at low illumination intensity and/or small photon energies, while external mechanisms such as charging of a surface oxide layer and photoinduced processes play a significant role for above-bandgap illumination with sufficient intensity.

Characterization of free-standing hydride vapor phase epitaxy GaN

A free-standing GaN template grown by hydride vapor phase epitaxy has been characterized by transmission electron microscopy (TEM). The TEM investigation was augmented by x-ray diffraction, defect delineation etching process followed by imaging with atomic force microscopy and variable temperature photoluminescence. The density of dislocations near the N face was determined to be, in order, 3±1×107, 4±1×107, and about 1×107 cm−2 by cross-sectional TEM, plan-view TEM, and a defect revealing etch, respectively. The same methods on the Ga face revealed the defect concentration to be, in order, less than 1×107 cm−2 by plan-view TEM, less than 5×106 cm−2 by cross-sectional TEM, and 5×105 cm−2 by defect revealing hot H3PO4 acid, respectively. The full width at half maximum of the symmetric (0002) x-ray diffraction peak was 69 and 160 arc sec for the Ga and N faces, respectively. That for the asymmetric (101_4) peak was 103 and 140 arc sec for Ga and N faces, respectively. The donor bound exciton linewidth was a...

Yellow luminescence in ZnO layers grown on sapphire

We conducted a detailed study of the yellow luminescence (YL) band that has a maximum of 2.19eV at 10K in undoped and N-doped ZnO layers grown on sapphire substrates. Important characteristics of this band and the related defect are established. The YL band is attributed to a transition between a shallow donor and an acceptor with an energy level ∼0.4eV above the valence band. Quenching of the YL intensity with activation energies of 85meV and 0.4eV is observed at temperatures above 100 and 320K, respectively. The YL band is possibly due to a defect complex that may include a Zn vacancy.

Transient photovoltage in GaN as measured by atomic force microscope tip

We studied restoration of the band bending at the surface of undoped GaN layers after illumination with above-bandgap light. The photovoltage saturated with illumination at about 0.2–0.3eV at room temperature, although the upward band bending for GaN in the dark is of the order of 1eV. We attribute the photovoltage effect to charging of the surface states, the density of which is estimated at about 1012cm−2. Restoration of the barrier after a light pulse is simulated by a phenomenological model whereby the acceptorlike surface states are emptied of electrons under illumination and filled back in dark due to thermionic transfer of free electrons from the bulk to the surface states over the near-surface barrier. Photoinduced desorption of oxygen also affects the value of the photovoltage if the illumination is prolonged.

Study of SiNx and SiO2 passivation of GaN surfaces

The optical properties of GaN films have been found to be sensitive to SiNx and SiO2 surface passivation. The main effect of such passivation on photoluminescence (PL) data is an increase of the PL intensity for near-band-edge emission. This effect is attributed to the removal of oxygen from the surface of GaN and the subsequent formation of a protective layer during passivation. The increase in PL intensity is more pronounced for samples passivated with SiO2, which demonstrate initially lower PL intensity and a lower equilibrium concentration of free electrons. A nearly constant band bending of approximately 1.0 eV at the surface has been observed for as-grown and passivated samples by scanning Kelvin probe microscopy (SKPM). This constant value is explained by pinning of the Fermi level at the surface. In addition, we have demonstrated that passivation of the GaN surface between the contacts of a Schottky diode leads to a reduction of the leakage current observed at reverse bias. It was found that the s...

Unusual luminescence lines in GaN

A series of sharp intense peaks was observed in the low-temperature photoluminescence spectrum of unintentionally doped GaN in the photon energy range between 3.0 and 3.46 eV. We attributed the majority of these peaks to excitons bound to unidentified structural and surface defects. Most of the structural- and surface-related peaks (at 3.21, 3.32, 3.34, 3.35, 3.38, and 3.42 eV) were observed in Ga polar films. In N polar GaN, we often observed the 3.45 eV peak attributed to excitons bound to the inversion domain interfaces.

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

We report on characterization and operation principle of a set of GaN/AlGaN multiple-quantum-well (MQW) photovoltaic detectors. The structures were grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates and fabricated in the back-illuminated vertical Schottky geometry. Introduction of MQWs into the active region of devices is expected to enhance the quantum efficiency due to the high absorption coefficient. A nearly flat spectral responsivity between 325 and 350 nm with 0.054 A/W peak responsivity was achieved from the single-side polished backside (rough) illuminated GaN/AlGaN MQW devices. The cutoff wavelength of the MQW photodetector can be tuned by adjusting the well width, well composition and barrier height. A model has been developed to gain insight into the operation principles of MQWs photodiodes. The peak responsivity increased with decreasing barrier thickness due to enhanced tunneling of photogenerated carriers. 2003 Elsevier Science Ltd. All rights reserved.

Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy

We report the surface, structural, and optical properties of typical Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy. The Ga-polar films were grown on AlN buffer while the N-polar films were grown on GaN buffer layers. Atomic force microscopy imaging shows that the as-grown and chemically etched Ga-polar films have a flat and pitted surface while the N-polar surface is rougher with isolated columns or islands. Transmission electron microscopy demonstrates a low density of inversion domains in the Ga-polar films, while a much higher density of inversion domains was observed in the N-polar films. X-ray diffraction curves show a narrower (002) peak for Ga-polar films than that for N-polar films. On the other hand, both Ga- and N-polar films show a similar width of (104) peak. Despite their rough surfaces, high density of inversion domains, and broader (002) x-ray diffraction peaks, N-polar films with low dislocation density were demonstrated. In addition, higher PL efficiency...

Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

Photoenhanced electrochemical (PEC) etching in an unstirred KOH solution under He–Cd laser illumination was used for delineating extended defects in GaN films. When a low-excitation intensity was employed, the process yielded threading vertical features at dislocation sites. Application of an external voltage or a higher-illumination intensity led to high-etch rates with smooth surfaces. Some highly resistive samples, for which no etching was obtained under normal etching conditions, could be etched with the application of a single-polarity external voltage. Finally, in a GaN sample with an AlN/GaN superstructure inside, high selectivity between AlN and GaN was achieved; in this case, the PEC process stopped at the thin AlN stop layer.