M. Barchuk

Optical properties of epitaxial BiFeO3 thin films grown on LaAlO3

Highly strained and nearly pseudomorphic BiFeO3 epitaxial films were deposited on LaAlO3 and TbScO3 substrates, respectively. The symmetry of the tetragonal-like BiFeO3 films is discussed based on polarisation dependent Raman measurements and on the comparison with Raman spectra measured for rhombohedral films deposited on TbScO3. The evaluation of ellipsometric spectra reveals that the films deposited on LaAlO3 are optically less dense and the features in complex dielectric function are blue-shifted by 0.3 eV as compared to the rhombohedral films. Optical bandgaps of 3.10 eV and 2.80 eV were determined for the films deposited on LaAlO3 and TbScO3, respectively. The shift in the optical bandgap and dielectric function is nearly preserved also for thicker films, which indicates that the compressive strain is retained even in films with thicknesses above 100 nm as was confirmed also by XRD investigations.

Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps

Polar GaN layers containing domains with inverse polarities are studied by means of high-resolution X-ray diffraction and transmission electron microscopy. It is shown how the presence of inversion domain boundaries can be recognized directly from reciprocal-space maps measured by X-ray diffraction.

Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices

A new approach is described that is applicable for structural characterization of any heteroepitaxially grown (strained or relaxed) III-nitride superlattices (SLs). The proposed method utilizes X-ray reciprocal space mapping measured in the vicinity of an asymmetrical reflection to determine the SL period, thickness, and strain state of a quantum well/barrier. On the example of a GaN/AlN SL, it is demonstrated that the structure parameters obtained from the proposed method agree very well with the parameters revealed by the currently preferred approach that is based on the measurements of ω/2θ X-ray diffraction profiles. Furthermore, it is shown that the shape of the reciprocal lattice points measured in the asymmetrical diffraction geometry contains additional information about the density of threading dislocations (TDs) in the GaN substrate and in the GaN/AlN SL. The comparison of the density of TDs in the substrate and in the SL allows analysis of the relaxation mechanism and development of new techniques for the improvement of the structural quality of the SL.

Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy

High-temperature vapor phase epitaxy (HTVPE) is a physical vapor transport technology for a deposition of gallium nitride (GaN) layers. However, little is known about the influence of the deposition parameters on the microstructure of the layers. In order to fill this gap, the influence of the ammonia (NH3) flow applied during the HTVPE growth on the microstructure of the deposited GaN layers is investigated in this work. Although the HTVPE technology is intended to grow GaN layers on foreign substrates, the GaN layers under study were grown on GaN templates produced by metal organic vapor phase epitaxy in order to be able to separate the growth defects from the defects induced by the lattice misfit between the foreign substrate and the GaN layer. The microstructure of the layers is characterized by means of high-resolution x-ray diffraction (XRD), transmission electron microscopy and photoluminescence. In samples deposited at low ammonia flow, planar defects were detected, along which the nitrogen atoms are found to be substituted by impurity atoms. The interplay between these planar defects and the threading dislocations is discussed. A combination of XRD and micro-Raman spectroscopy reveals the presence of compressive residual stress in the samples.

Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction

X-ray diffraction is one of the most popular experimental methods employed for determination of dislocation densities, as it can recognize both the strain fields and the local lattice rotations produced by dislocations. The main challenge of the quantitative analysis of the dislocation density is the formulation of a suitable microstructure model, which describes the dislocation arrangement and the effect of the interactions between the strain fields from neighboring dislocations reliably in order to be able to determine the dislocation densities precisely. The aim of this study is to prove the capability of X-ray diffraction and two computational methods, which are frequently used for quantification of the threading dislocation densities from X-ray diffraction measurements, in the special case of partially bunched threading dislocations. The first method is based on the analysis of the dislocation-controlled crystal mosaicity, and the other one on the analysis of diffuse X-ray scattering from threading d...