O. Pätzold

Melt Flow and Species Transport in μg‐Gradient‐Freeze Growth of Germanium

The result of a μg-experiment on the Gradient-Freeze growth of Ge:Zn with doping from the vapour phase shows a homogeneous distribution of the zinc in the melt, indicating the dominating role of a gravity-independent transport mechanism. This effect is investigated numerically on the basis of a global model of the growth setup. The numerical simulation includes the melt flow and the transport of the dopant taking into account buoyant and thermocapillary forces. The results confirm the minor influence of gravity on the species transport. The complete mixing of the melt can be explained by thermocapillary (Marangoni) convection only.

Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline Silicon

The influence of the CO concentration in the gas phase on the distribution of carbon in Bridgman-grown, multicrystalline silicon is studied. The growth experiments were conducted in a high-vacuum induction furnace either under a CO enriched atmosphere or under CO free conditions. Furthermore, thermodynamic calculations in the system silicon/oxygen/carbon were done. In crystal growth under a CO enriched atmosphere a SiC-containing layer is formed on the top surface of the melt in agreement with the calculated phase diagram. In this case, the level of substitutional carbon in the cystal was found to be almost constant, whereas the axial carbon concentration in crystals grown under CO free conditions increases monotonously according to Scheils law.

Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps

Polar GaN layers containing domains with inverse polarities are studied by means of high-resolution X-ray diffraction and transmission electron microscopy. It is shown how the presence of inversion domain boundaries can be recognized directly from reciprocal-space maps measured by X-ray diffraction.

Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy

High-temperature vapor phase epitaxy (HTVPE) is a physical vapor transport technology for a deposition of gallium nitride (GaN) layers. However, little is known about the influence of the deposition parameters on the microstructure of the layers. In order to fill this gap, the influence of the ammonia (NH3) flow applied during the HTVPE growth on the microstructure of the deposited GaN layers is investigated in this work. Although the HTVPE technology is intended to grow GaN layers on foreign substrates, the GaN layers under study were grown on GaN templates produced by metal organic vapor phase epitaxy in order to be able to separate the growth defects from the defects induced by the lattice misfit between the foreign substrate and the GaN layer. The microstructure of the layers is characterized by means of high-resolution x-ray diffraction (XRD), transmission electron microscopy and photoluminescence. In samples deposited at low ammonia flow, planar defects were detected, along which the nitrogen atoms are found to be substituted by impurity atoms. The interplay between these planar defects and the threading dislocations is discussed. A combination of XRD and micro-Raman spectroscopy reveals the presence of compressive residual stress in the samples.

Ultrasound Flow Mapping for the Investigation of Crystal Growth

A high energy conversion and cost efficiency are keys for the transition to renewable energy sources, e.g., solar cells. The efficiency of multicrystalline solar cells can be improved by enhancing the understanding of its crystallization process, especially the directional solidification. In this paper, a novel measurement system for the characterization of flow phenomena and solidification processes in low-temperature model experiments on the basis of ultrasound (US) Doppler velocimetry is described. It captures turbulent flow phenomena in two planes with a frame rate of 3.5 Hz and tracks the shape of the solid-liquid interface during multihour experiments. Time-resolved flow mapping is performed using four linear US arrays with a total of 168 transducer elements. Long duration measurements are enabled through an online, field-programmable gate array (FPGA)-based signal processing. Nine single US transducers allow for in situ tracking of a solid–liquid interface. Results of flow and solidification experiments in the model experiment are presented and compared with numerical simulation. The potential of the developed US system for measuring turbulent flows and for tracking the solidification front during a directional crystallization process is demonstrated. The results of the model experiments are in good agreement with numerical calculations and can be used for the validation of numerical models, especially the selection of the turbulence model.

Ultrasound flow mapping for 3D turbulent liquid metal flows

Conductive fluids, e.g. metallic melts, can be driven by magnetic fields, which is a branch of magnetohydrodynamics (MHD). MHD can be used for driving a melt flow during the crystal growth of photovoltaic silicon in order to improve the mass and heat transfer in the melt for better structural and electrical properties of the silicon crystals. However, the optimal application of MHD requires a good understanding of the flow, which is generally complex and unsteady during crystal growth. Substantial knowledge about the flow is usually gained through numerical simulations and MHD model experiments at room temperature. For model experiments, a comprehensive flow mapping of complex and unsteady flow phenomena is required.

Magnetic flow control in growth and casting of photovoltaic silicon: Numerical and experimental results

A novel, vertical Bridgman-type technique for growing multi-crystalline silicon ingots in an induction furnace is described. In contrast to conventional growth, a modified setup with a cone-shaped crucible and susceptor is used. A detailed numerical simulation of the setup is presented. It includes a global thermal simulation of the furnace and a local simulation of the melt, which aims at the influence of the melt flow on the temperature and concentration fields. Furthermore, seeded growth of cone-shaped Si ingots using either a monocrystalline seed or a seed layer formed by pieces of poly-Si is demonstrated and compared to growth without seeds. The influences of the seed material on the grain structure and the dislocation density of the ingots are discussed. The second part addresses model experiments for the Czochralski technique using the room temperature liquid metal GaInSn. The studies were focused on the influence of a rotating and a horizontally static magnetic field on the melt flow and the related heat transport in crucibles being heated from bottom and/or side, and cooled by a crystal model covering about 1/3 of the upper melt surface.

Ultrasound flow mapping for the investigation of crystal growth

The production of high quality solar cells requires a deep understanding of the solidification process. Especially when time-dependent magnetic fields are used to improve the material and heat transfer in the melt, the resulting flow structures are complex and unsteady. Hence, numerical simulations are used to gain an insight into the melt flow. For the calibration of the numerical simulations, model experiments using liquid metals at room temperature are used. The melt flow is strongly influenced by the melt height, that constantly decreases during a solidification process. Hence, measuring the position and the shape of the solidification front is required for an understanding of the melt flow. Furthermore a comprehensive flow mapping of complex and unsteady flow phenomena is necessary. Commercial flow instrumentation systems usually utilize only one or a few single element probes that are operated strictly in sequential multiplex. This leads to low frame rates and limits their application to quasi-static flow fields.