M. Gherasimova

290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles

We demonstrate a compact system, incorporating a 32-element linear array of ultraviolet (290 nm and 340 nm) light-emitting diodes (LEDs) and a multi-anode photomultiplier tube, to the in-flight fluorescence detection of aerosolized particles, here containing the biological molecules tryptophan and NADH. This system illustrates substantial advances in the growth and fabrication of new semiconductor UV light emitting devices and an evolution in packaging details for LEDs tailored to the bio-aerosol warning problem. Optical engineering strategies are employed which take advantage of the size and versatility of light-emitting diodes to develop a truly compact fluorescence detector.

Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition

We report flexible synthesis of group III–nitride nanowires and nanostructures by metalorganic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Supersaturation and surface stoichiometry strongly influence the stability of liquid droplets and growth selectivity. To facilitate and sustain the VLS growth, indium catalyst is introduced based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Both GaN and AlN nanowires have been synthesized using MOCVD. Three-dimensional AlN∕GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Ultraviolet light-emitting diodes operating in the 340nm wavelength range and application to time-resolved fluorescence spectroscopy

We report on the development of UV light-emitting diodes in the 340nm wavelength range, based on quaternary AlGaInN quantum-well active media. Output powers up to 1mW from small area devices (<100μm diameter) directly off a planar chip have been achieved. The devices have been operated as subnanosecond pulsed sources to demonstrate their applicability to compact time-resolved fluorescence spectroscopy.

Tensile Behavior of Free-Standing Gold Films

A method for tensile testing thin gold films is presented. Free-standing tensile specimens were prepared by evaporating 0.8 {micro}m of gold onto a patterned oxidized silicon wafer. Using common microelectronic fabrication techniques, free-standing thin film specimens were produced that span rectangular windows in the wafer. The wafer was diced into individual tensile specimens composed of a thin film surrounded by a silicon frame. The final step before testing was to cleave the silicon frame so that the load was completely carried by the metal film. The ultimate tensile strength of the films was found to be approximately 150% greater than that of annealed bulk gold. In contrast, the measured elastic modulus for the thin film specimens was approximately the same as that documented for bulk gold.

Investigation of Mg doping in high-Al content p-type AlxGa1−xN (0.3<x<0.5)

A study of Mg doping of AlxGa1−xN up to x∼50% using microstructural and electrical probes is reported. The viability of effective p-type doping is defined by a minimum concentration of Mg required to offset the background impurities and, more importantly, a maximum limit above which inversion domains and structural defects start to nucleate, accompanied by a rapid degradation of electrical transport. Resistivity of 10 Ω cm and free hole concentrations above 1017cm−3 are achieved for AlxGa1−xN up to x∼50% within an optimum window of Mg incorporation.

Heteroepitaxial evolution of AlN on GaN Grown by metal-organic chemical vapor deposition

We have investigated the morphological evolution during heteroepitaxial growth of AlN on GaN by metal-organic chemical vapor deposition at different V/III ratios. Two-dimensional layer–by–layer and step flow growth modes, combined with strain-induced cracking, are observed at low and intermediate V/III ratios, while nitrogen-rich conditions yield three-dimensional domain-like growth due to limited Al adatom diffusion. Samples grown at the metal-rich conditions exhibit a crosshatch pattern of surface undulations possibly related to the presence of misfit dislocations that form at the early stages of nucleation. Our observations show that the local stoichiometry at the vapor-solid interface strongly influences the adatom kinetics during the growth, thereby affecting the nature of strain relaxation and growth mode.

Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

Vertically injected thin-film ultraviolet light-emitting diodes operating at 325 and 280nm are demonstrated. Low-temperature AlN interlayers allow crack-free growth of AlxGa1−xN with compositions up to x=0.53 on GaN-on-sapphire templates. The GaN layer allows laser-induced separation of the highly strained epi stack from the sapphire substrate with high yield. Cathode contacts are formed on nitrogen-face AlxGa1−xN (up to x=0.53) and allow vertical injection of current into the active region. Controlled roughening of the nitrogen-face AlxGa1−xN is also demonstrated through photoelectrochemical etching and results in >2.5× light extraction gain for 325 and 280nm devices.

Growth of AlGaN nanowires by metalorganic chemical vapor deposition

Growth of ternary AlGaN nanowires using metalorganic chemical vapor deposition is investigated. Structural, chemical, and optical characterization at nanoscopic scale is carried out by high resolution transmission electron microscopy, x-ray energy dispersive spectroscopy, and spatially resolved cathodoluminescence. Spontaneous formation of Al(Ga)N∕GaN coaxial nanowires with distinct emission at 370 nm is observed. It is identified that the interplay between surface kinetics and thermodynamics facilitates the catalytic growth of GaN core while a limited surface diffusion of Al adatoms leads to nonselective, vapor-solid growth of Al(Ga)N sheath. The observation points to a fundamental difference in nanosynthesis using near-equilibrium and nonequilibrium techniques.

Spectroscopic Sorting of Aerosols by a Compact Sensor Employing UV LEDs

A compact sensor for physically sorting bioaerosols based on fluorescence spectra from single particles excited using arrays of ultraviolet light emitting diodes (UV LEDs) is presented. The optical system integrates electronics for real-time processing of spectral data and a miniaturized aerodynamic deflector for particle separation. Fluorescent polystyrene latex spheres are used to demonstrate fluorescence collection on-the-fly, operation of a real-time spectral algorithm, and physical separation of individual particles. This sensor illustrates the utility of recently developed UV LEDs, in conjunction with novel optical design and custom electronics, to shrink the size of aerosol fluorescence detection systems.

Optically pumped ultraviolet AlGaInN quantum well laser at 340 nm wavelength

We have demonstrated and characterized an optically pumped room temperature pulsed laser at 340 nm, based on a separate confinement AlGaInN multiple quantum well heterostructure design. The lasing was achieved at threshold peak power of ∼800 kW/cm2. Gain spectroscopy showed modest peak modal gain on the order of 5 cm−1, suggesting that the combination of weak optical confinement and nonradiative recombination would lead to high threshold currents for comparably constructed diode lasers.