M. H. Gau

Dresselhaus effect in bulk wurtzite materials

The spin-splitting energies of the conduction band for ideal wurtzite materials are calculated within the nearest-neighbor tight-binding method. It is found that ideal wurtzite bulk inversion asymmetry yields not only a spin-degenerate line (along the kz axis) but also a minimum-spin-splitting surface, which can be regarded as a spin-degenerate surface in the form of bkz2−k‖2=0 (b≈4) near the Γ point. This phenomenon is referred to as the Dresselhaus effect (defined as the cubic-in-k term) in bulk wurtzite materials because it generates a term γwz(bkz2−k‖2)(σxky−σykx) in the two-band k∙p Hamiltonian.

Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures

We have observed the

Wurtzite structure effects on spin splitting in GaN/AlN quantum wells

k

Gate-controlled spin splitting in GaN∕AlN quantum wells

-dependent spin splitting in wurtzite

Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect

{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}∕\mathrm{Ga}\mathrm{N}

Heterogeneous integration of indium phosphide on silicon by nano-epitaxial lateral overgrowth

heterostructures. An anomalous beating pattern was observed in Shubnikov--de Haas measurements due to the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the

Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As∕GaAs quantum wells

k

Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon

-dependent spin splitting at high values of

Surface morphology of indium phosphide grown on silicon by nano-epitaxial lateral overgrowth

k

Rashba effects in bulk wurtzite materials

is attributed to Dresselhaus term which is enhanced by the