Ikai Lo

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

A post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N2O-plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% (N2O-plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field.

Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy

Dislocation-free vertical GaN pillars in nanoscale were grown on Si (111) surface through self-assembly by molecular-beam epitaxy. No extra catalytic or nanostructural assistance has been employed. These nanorods have a lateral dimension from ≲10 nm to ∼800 nm and a height of ≲50 nm to ≳3 μm protruding above the film, depending on the growth parameters. The top view of the nanorods has a hexagonal shape from scanning electron microscopy. Transmission electron microscopy shows that the nanorods are hexagonal, single crystal GaN along the c-axis. An extra peak at 363 nm originated from nanorods was observed in photoluminescence spectra at 66 K, which is ascribed to the surface states according to the results of surface passivation. Micro-Raman spectroscopy on a single nanorod reveals E1 and E2 modes at 559.0 and 567.4 cm−1, respectively. Large strain was observed in both the transmission electron micrograph and the Raman shift. A possible growth mechanism is discussed.

Yellow luminescence depth profiling on GaN epifilms using reactive ion etching

Depth profiling measurements of photoluminescence on GaN epitaxial films grown on c-plane sapphire with metalorganic chemical vapor deposition have been performed. Dry etching technique of reactive ion etching is used with reactive gas of CCl2F2/H2/Ar under an operation power of 200 W. Before and after each etching, reflectivity and photoluminescence spectra are measured. Film thickness is determined from both the scanning electron microscopy and the interference oscillations of the reflectivity spectra. An excellent steady etching rate of 19.2 nm/min is established. The photoluminescence measurements show that both the near-band-edge and the yellow luminescence remain fairly constant until the film thickness of about 700 nm, and a large drop is obtained in the ratio of near-band-edge to yellow emission intensity under about 300 nm. Analysis shows that the yellow luminescence emitters are mostly confined within the near interface region, and supports the origin of yellow luminescence to be due to native d...

Dresselhaus effect in bulk wurtzite materials

The spin-splitting energies of the conduction band for ideal wurtzite materials are calculated within the nearest-neighbor tight-binding method. It is found that ideal wurtzite bulk inversion asymmetry yields not only a spin-degenerate line (along the kz axis) but also a minimum-spin-splitting surface, which can be regarded as a spin-degenerate surface in the form of bkz2−k‖2=0 (b≈4) near the Γ point. This phenomenon is referred to as the Dresselhaus effect (defined as the cubic-in-k term) in bulk wurtzite materials because it generates a term γwz(bkz2−k‖2)(σxky−σykx) in the two-band k∙p Hamiltonian.

Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy

The surface morphology of GaN epitaxial films grown by plasma-assisted molecular-beam epitaxy has been investigated. We found that the surface morphology was sensitive to the N to Ga flux ratio (N/Ga) when grown at a high temperature (i.e., 788 °C). At that temperature, we did not observe large sized Ga droplets on the surface even at Ga-rich conditions. Furthermore, we found a transition from two-dimensional (2D) to three-dimensional (3D) growth in the intermediate Ga-stable regime. The slope of the growth rate was different: Slope=(0.39±0.06) was observed in the 2D-growth mode and (0.14±0.03) in the 3D-growth mode. In the high N/Ga ratio, the total dislocation concentration was reduced, and the mixed threading dislocation concentration had a minimum value at N/Ga=22.5. By comparing with the Hall carrier concentration results, we found that the mixed threading dislocations influence the number of electronic carriers.

Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures

We have observed the

Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells

k

InN nanotips as excellent field emitters

-dependent spin splitting in wurtzite

Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO 2 -Based Resistive Random Access Memory

{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}∕\mathrm{Ga}\mathrm{N}

Wurtzite structure effects on spin splitting in GaN/AlN quantum wells

heterostructures. An anomalous beating pattern was observed in Shubnikov--de Haas measurements due to the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the