M.-H. Liao

Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs”

Based on the stress extraction and measurement by the atomic-force-microscope-Raman technique with nanometer-level space resolution, the high compressive stress about 700 MPa on the Si critical dimension (CD) is observed in the current complementary metal-oxide-semiconductor (CMOS) transistor. The difference of thermal expansion between Si and Shallow trench isolation (STI) oxide during the total thermal budget for the standard CMOS transistor manufacture process results in this high compressive stress in Si CD and will further degrade the electron carrier mobility about 25% seriously. In order to relax this intrinsic-processed compressive stress in Si CD and recover this device performance loss, the novel process is proposed in this paper in addition to the usage of one-side pad-SiN layer demonstrated in our previous work. With this novel process of additional nitrogen-ion implantation (IMP) treatment in STI oxide, it can be found that the less compressive stress in the Si CD can be achieved by the smaller difference of thermal expansion coefficients between Si and highly n-doped SiO2 STI oxide. The formation of Si-N bonding in the STI-oxide region can be monitored by Fourier-transform infrared spectroscopy spectra, and the thermal expansion coefficients for Si, SiO2, and SiN are 2.6, 0.4, and 2.87 ppm/K, respectively. The relaxation of intrinsic-processed compressive stress in the Si CD of about 400 MPa by this proposed additional nitrogen IMP treatment contributes 14 % electron-carrier-mobility enhancement/recovery. The experimental electrical data agree well with the theoretical k.p calculation for the strained-Si theory.

Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors From 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element Modeling

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Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036]

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Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design

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The Optimization of SiGe Hetero-Structure Thin-Film Solar Cell by the Theoretical Calculation and Quantitative Analysis

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Optimized Si0.5Ge0.5/Si Interface Quality by the Process of Low Energy Hydrogen Plasma Cleaning and Investigation by Positron Annihilation Spectroscopy☆

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The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique

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A non-linear analytic stress model for the analysis on the stress interaction between TSVs

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Stress and Curvature of Periodic Trench Structures on Sapphire Substrate with GaN Film

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The Improving Si0.5Ge0.5/Si Interface Quality through a Low Energy Hydrogen Plasma Cleaning Process and Positron Annihilation Spectroscopy

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