M. Lamponi

Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler

We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III-V waveguide has a width of only 1.7 μm, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with high-performance modulator designs and allowing efficient coupling to a standard 220-nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30 mA and an output power of more than 4 mW at room temperature in continuous-wave operation regime. Continuous wave lasing up to 70°C is obtained.

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 °C and a thermo-optic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

High Gain (30 dB) and High Saturation Power (11 dBm) RSOA Devices as Colorless ONU Sources in Long-Reach Hybrid WDM/TDM-PON Architecture

We propose a hybrid wavelength-division-multi-plexing/time-division-multiplexing architecture using reflective semiconductor optical amplifiers (RSOAs) for next-generation access solutions. We demonstrate that the use of a high gain and high output power RSOA as remote modulator enables a 36-dB optical budget for colorless operation at 2.5 Gb/s over 45-km single-mode fiber. This RSOA-based configuration provides a reasonable cost per user for this hybrid system and can be easily upgraded.

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Radio-Over-Fiber Access Network Architecture Based on New Optimized RSOA Devices With Large Modulation Bandwidth and High Linearity

Next-generation wireless communications systems need to have high throughputs to satisfy user demand, to be low-cost, and to have an efficient management as principal features. Using a high-performance, low-cost reflective semiconductor optical amplifier (RSOA) as a colorless remote modulator at the antenna unit, the wavelength-division multiplexing (WDM) technique can be used for supporting distributed antenna systems (DASs). Each antenna unit is connected to the central unit using optical fiber and all links are used to transmit radio signals. Due to a large optical bandwidth, RSOAs are potential candidates for cost effective WDM systems. In this paper, simulations are carried out to determine optimized RSOA devices for wireless technology. New RSOA structures are fabricated and evaluated. The optimized RSOA is electrically driven by a standard Wi-Fi input signal (IEEE 802.11 g) with a 64-quadrature amplitude modulation (QAM) format. A large modulation bandwidth and a high electrooptic gain are demonstrated, which are confirmed by good performance when using orthogonal frequency-division multiplexing techniques. Characteristics such as high linearity and large electrooptic modulation bandwidth of our RSOA are sufficient to ensure an error vector magnitude (EVM) lower than 5% with a dynamic range exceeding 35 dB in a back-to-back configuration (at 0 dBm). Uplink transmission over a 20 km of single-mode fiber is also demonstrated with EVM lower than 5% and a dynamic range exceeding 25 dB (at 5 dBm).

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Coherent terahertz photonics

We present a review of recent developments in THz coherent systems based on photonic local oscillators. We show that such techniques can enable the creation of highly coherent, thus highly sensitive, systems for frequencies ranging from 100 GHz to 5 THz, within an energy efficient integrated platform. We suggest that such systems could enable the THz spectrum to realize its full applications potential. To demonstrate how photonics-enabled THz systems can be realized, we review the performance of key components, show recent demonstrations of integrated platforms, and give examples of applications.

Widely wavelength tunable hybrid III–V/silicon laser with 45 nm tuning range fabricated using a wafer bonding technique

A hybrid III-V on silicon laser, integrating two intra-cavity ring resonators, is fabricated by using a wafer bonding technique. It achieves a thermal tuning range of 45 nm, with side mode suppression ratio higher than 40 dB.

Integrated InP Heterodyne Millimeter Wave Transmitter

A monolithically integrated tunable heterodyne source designed for the generation and modulation of sub-terahertz signals is demonstrated. Distributed feedback lasers, semiconductor optical amplifier amplifiers, passive waveguides, beam combiners, electro-optic modulators, and high-speed photodetectors have been monolithically integrated on the same InP-based platform. Millimeter wave generation at up to 105 GHz based on heterodyning the optical tones from two integrated lasers in the integrated high bandwidth unitraveling-carrier photodetector has been demonstrated. This photonic integrated chip was used in a 100-Mb/s OOK wireless transmission experiment using the integrated amplitude modulator.

Directly modulated and fully tunable hybrid silicon lasers for future generation of coherent colorless ONU

We propose and demonstrate asymmetric 10 Gbit/s upstream--100 Gbit/s downstream per wavelength colorless WDM/TDM PON using a novel hybrid-silicon chip integrating two tunable lasers. The first laser is directly modulated in burst mode for upstream transmission over up to 25 km of standard single mode fiber and error free transmission over 4 channels across the C-band is demonstrated. The second tunable laser is successfully used as local oscillator in a coherent receiver across the C-band simultaneously operating with the presence of 80 downstream co-channels.