M. Manca

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2 -Based van der Waals Heterostructures

The strong light-matter interaction and the valley selective optical selection rules make monolayer (ML) MoS[subscript 2] an exciting 2D material for fundamental physics and optoelectronics applications. But, so far, optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogeneous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better-characterized ML materials MoSe[subscript 2] and WSe[subscript 2]. In this work, we show that encapsulation of ML MoS[subscript 2] in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T = 4 K. Narrow optical transition linewidths are also observed in encapsulated WS[subscript 2], WSe[subscript 2], and MoSe[subscript 2] MLs. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high-quality samples. Among the new possibilities offered by the well-defined optical transitions, we measure the homogeneous broadening induced by the interaction with phonons in temperature-dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.

Enabling valley selective exciton scattering in monolayer WSe2 through upconversion.

Excitons, Coulomb bound electron–hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe2 monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects. But so far the bosonic character of exciton scattering processes remains largely unexplored in these two-dimensional materials. Here we show that scattering between B-excitons and A-excitons preferably happens within the same valley in momentum space. This leads to power dependent, negative polarization of the hot B-exciton emission. We use a selective upconversion technique for efficient generation of B-excitons in the presence of resonantly excited A-excitons at lower energy; we also observe the excited A-excitons state 2s. Detuning of the continuous wave, low-power laser excitation outside the A-exciton resonance (with a full width at half maximum of 4 meV) results in vanishing upconversion signal.

Charged excitons in monolayer WSe2: Experiment and theory

© 2017 American Physical Society. Charged excitons, or X± trions, in monolayer transition-metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X0 they dominate the emission spectrum at low and elevated temperatures. We use charge-tunable devices based on WSe2 monolayers encapsulated in hexagonal boron nitride to investigate the difference in binding energy between X+ and X- and the X- fine structure. We find in the charge-neutral regime, the X0 emission accompanied at lower energy by a strong peak close to the longitudinal optical (LO) phonon energy. This peak is absent in reflectivity measurements, where only the X0 and an excited state of the X0 are visible. In the n-doped regime, we find a closer correspondence between emission and reflectivity as the trion transition with a well-resolved fine-structure splitting of 6 meV for X- is observed. We present a symmetry analysis of the different X+ and X- trion states and results of the binding energy calculations. We compare the trion binding energy for the n- and p-doped regimes with our model calculations for low carrier concentrations. We demonstrate that the splitting between the X+ and X- trions as well as the fine structure of the X- state can be related to the short-range Coulomb-exchange interaction between the charge carriers.

Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides

The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced doping is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

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Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure

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Observation of exciton-phonon coupling in MoSe 2 monolayers

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Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

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Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers

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Optical spectroscopy of excited exciton states in MoS2 monolayers in van der Waals heterostructures

range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.