M. R. Correia

Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping

Strain and composition distributions within wurtzite InGaN/GaN layers are investigated by high-resolution reciprocal space mapping (RSM). We illustrate the potential of RSM to detect composition and strain gradients independently. This information is extracted from the elongation of broadened reciprocal lattice points (RLP) in asymmetric x-ray reflections. Three InxGa1−xN/GaN (nominal x=0.25) samples with layer thickness of 60, 120, and 240 nm, were grown in a commercial metal-organic chemical vapor deposition reactor. The RSMs around the (105) reflection show that the strain profile is nonuniform over depth in InGaN. The directions of “pure” strain relaxation in the reciprocal space, for a given In content (isocomposition lines), are calculated based on elastic theory. Comparison between these directions and measured distributions of the RLP shows that the relaxation process does not follow a specific isocomposition line. The In mole fraction (x) increases as the films relax. At the start of growth all t...

Structural and optical properties of InGaN/GaN layers close to the critical layer thickness

In this work, we investigate structural and optical properties of metalorganic chemical vapor deposition grown wurtzite InxGa1−xN/GaN epitaxial layers with thicknesses that are close to the critical layer thickness (CLT) for strain relaxation. CLT for InxGa1−xN/GaN structures was calculated as a function of the InN content, x, using the energy balance model proposed by People and Bean [Appl. Phys. Lett. 47, 322 (1985)]. Experimentally determined CLT are in good agreement with these calculations. The occurrence of discontinuous strain relaxation (DSR), when the CLT is exceeded, is revealed in the case of a 120 nm thick In0.19Ga0.89N layer by x-ray reciprocal space mapping of an asymmetrical reflection. The effect of DSR on the luminescence of this layer is clear: The luminescence spectrum shows two peaks centered at ∼2.50 and ∼2.67 eV, respectively. These two components of the luminescence of the sample originate in regions of different strain, as discriminated by depth-resolving cathodoluminescence spectr...

Large-area high-throughput synthesis of monolayer graphene sheet by Hot Filament Thermal Chemical Vapor Deposition

We report hot filament thermal CVD (HFTCVD) as a new hybrid of hot filament and thermal CVD and demonstrate its feasibility by producing high quality large area strictly monolayer graphene films on Cu substrates. Gradient in gas composition and flow rate that arises due to smart placement of the substrate inside the Ta filament wound alumina tube accompanied by radical formation on Ta due to precracking coupled with substrate mediated physicochemical processes like diffusion, polymerization etc., led to graphene growth. We further confirmed our mechanistic hypothesis by depositing graphene on Ni and SiO2/Si substrates. HFTCVD can be further extended to dope graphene with various heteroatoms (H, N, and B, etc.,), combine with functional materials (diamond, carbon nanotubes etc.,) and can be extended to all other materials (Si, SiO2, SiC etc.,) and processes (initiator polymerization, TFT processing) possible by HFCVD and thermal CVD.

Compositional dependence of the strain-free optical band gap in InxGa1−xN layers

The effect of strain on the compositional and optical properties of a set of epitaxial single layers of InxGa1−xN was studied. Indium content was measured free from the effects of strain by Rutherford backscattering spectrometry. Accurate knowledge of the In mole fraction, combined with x-ray diffraction measurements, allows perpendicular strain (ezz) to be evaluated. Optical band gaps were determined by absorption spectroscopy and corrected for strain. Following this approach, the strain free dependence of the optical band gap in InxGa1−xN alloys was determined for x⩽0.25. Our results indicate an “anomalous,” linear, dependence of the energy gap on the In content, at room temperature: Eg(x)=3.39–3.57x eV. Extension of this behavior to higher concentrations is discussed on the basis of reported results.

Thermal conductivity of silicon bulk and nanowires: Effects of isotopic composition, phonon confinement, and surface roughness

We present a rigorous analysis of the thermal conductivity of bulk silicon (Si) and Si nanowires (Si NWs) which takes into account the exact physical nature of the various acoustic and optical phonon mechanisms. Following the Callaway solution for the Boltzmann equation, where resistive and nonresistive phonon mechanisms are discriminated, we derived formalism for the lattice thermal conductivity that takes into account the phonon incidence angles. The phonon scattering processes are represented by frequency-dependent relaxation time. In addition to the commonly considered acoustic three-phonon processes, a detailed analysis of the role of the optical phonon decay into acoustic phonons is performed. This optical phonon decay mechanism is considered to act as acoustic phonon generation rate partially counteracting the acoustic phonon scattering rates. We have derived the analytical expression describing this physical mechanism which should be included in the general formalism as a correction to the resisti...

Interpretation of double x-ray diffraction peaks from InGaN layers

The presence of two, or more, x-ray diffraction (XRD) peaks from an InGaN epilayer is sometimes regarded as an indicator of phase segregation. Nevertheless, detailed characterization of an InGaN/GaN bilayer by a combination of XRD and Rutherford backscattering spectrometry (RBS) shows that splitting of the XRD peak may be completely unrelated to phase decomposition. Wurtzite InGaN/GaN layers were grown in a commercial reactor. An XRD reciprocal space map performed on the (105) plane shows that one component of the partially resolved InGaN double peak is practically aligned with that of the GaN buffer, indicating that part of the layer is pseudomorphic to the GaN template. The other XRD component is shown to have the same indium content as the pseudomorphic component, from a consideration of the effect of strain on the c- and a-lattice constants. The composition deduced from XRD measurements is confirmed by RBS. Depth-resolving RBS channeling angular scans also show that the region closer to the GaN/InGaN ...

Hybridization of Zinc Oxide Tetrapods for Selective Gas Sensing Applications

In this work, the exceptionally improved sensing capability of highly porous three-dimensional (3-D) hybrid ceramic networks toward reducing gases is demonstrated for the first time. The 3-D hybrid ceramic networks are based on doped metal oxides (MexOy and ZnxMe1-xOy, Me = Fe, Cu, Al) and alloyed zinc oxide tetrapods (ZnO-T) forming numerous junctions and heterojunctions. A change in morphology of the samples and formation of different complex microstructures is achieved by mixing the metallic (Fe, Cu, Al) microparticles with ZnO-T grown by the flame transport synthesis (FTS) in different weight ratios (ZnO-T:Me, e.g., 20:1) followed by subsequent thermal annealing in air. The gas sensing studies reveal the possibility to control and change/tune the selectivity of the materials, depending on the elemental content ratio and the type of added metal oxide in the 3-D ZnO-T hybrid networks. While pristine ZnO-T networks showed a good response to H2 gas, a change/tune in selectivity to ethanol vapor with a decrease in optimal operating temperature was observed in the networks hybridized with Fe-oxide and Cu-oxide. In the case of hybridization with ZnAl2O4, an improvement of H2 gas response (to ∼7.5) was reached at lower doping concentrations (20:1), whereas the increase in concentration of ZnAl2O4 (ZnO-T:Al, 10:1), the selectivity changes to methane CH4 gas (response is about 28). Selectivity tuning to different gases is attributed to the catalytic properties of the metal oxides after hybridization, while the gas sensitivity improvement is mainly associated with additional modulation of the electrical resistance by the built-in potential barriers between n-n and n-p heterojunctions, during adsorption and desorption of gaseous species. Density functional theory based calculations provided the mechanistic insights into the interactions between different hybrid networks and gas molecules to support the experimentally observed results. The studied networked materials and sensor structures performances would provide particular advantages in the field of fundamental research, applied physics studies, and industrial and ecological applications.

Facile synthesis of hydrogenated reduced graphene oxide via hydrogen spillover mechanism

Here we demonstrate a single step approach for the facile reduction of graphene oxide (GO) to hydrogenated reduced graphene oxide (HRGO) under ambient conditions.

Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples

Er-related luminescence near 1.54 μm (∼805 meV) is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well as the influence of different nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spectrometry, different lattice sites for the optical active Er-related centers are identified.

Raman study of the A1(LO) phonon in relaxed and pseudomorphic InGaN epilayers

The behavior of the A1(LO) phonon mode of relaxed and pseudomorphic InxGa1−xN epilayers, at the surface, is investigated by Raman spectroscopy. This study involves relaxed and pseudomorphic samples, with a compositional range of 0.12⩽x<0.30 and 0.04<x⩽0.20, respectively. Raman measurements were performed under excitation at 3.71 eV. Due to the low depth penetration of the incident light (40 nm), the major contribution to Raman scattering comes from the surface, where strain and composition have been independently determined. For relaxed samples, a linear dependence of the A1(LO) phonon frequency is obtained, as theoretically expected for an one-mode behavior alloy: Ω0(x)=(736±1)-(149±2)x. In the case of pseudomorphic samples, the phonon frequency is almost composition independent up to x=0.11, probably due to the opposite effects of strain and alloying.