N. Ben Sedrine

Hybridization of Zinc Oxide Tetrapods for Selective Gas Sensing Applications

In this work, the exceptionally improved sensing capability of highly porous three-dimensional (3-D) hybrid ceramic networks toward reducing gases is demonstrated for the first time. The 3-D hybrid ceramic networks are based on doped metal oxides (MexOy and ZnxMe1-xOy, Me = Fe, Cu, Al) and alloyed zinc oxide tetrapods (ZnO-T) forming numerous junctions and heterojunctions. A change in morphology of the samples and formation of different complex microstructures is achieved by mixing the metallic (Fe, Cu, Al) microparticles with ZnO-T grown by the flame transport synthesis (FTS) in different weight ratios (ZnO-T:Me, e.g., 20:1) followed by subsequent thermal annealing in air. The gas sensing studies reveal the possibility to control and change/tune the selectivity of the materials, depending on the elemental content ratio and the type of added metal oxide in the 3-D ZnO-T hybrid networks. While pristine ZnO-T networks showed a good response to H2 gas, a change/tune in selectivity to ethanol vapor with a decrease in optimal operating temperature was observed in the networks hybridized with Fe-oxide and Cu-oxide. In the case of hybridization with ZnAl2O4, an improvement of H2 gas response (to ∼7.5) was reached at lower doping concentrations (20:1), whereas the increase in concentration of ZnAl2O4 (ZnO-T:Al, 10:1), the selectivity changes to methane CH4 gas (response is about 28). Selectivity tuning to different gases is attributed to the catalytic properties of the metal oxides after hybridization, while the gas sensitivity improvement is mainly associated with additional modulation of the electrical resistance by the built-in potential barriers between n-n and n-p heterojunctions, during adsorption and desorption of gaseous species. Density functional theory based calculations provided the mechanistic insights into the interactions between different hybrid networks and gas molecules to support the experimentally observed results. The studied networked materials and sensor structures performances would provide particular advantages in the field of fundamental research, applied physics studies, and industrial and ecological applications.

Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

Infrared to vacuum-ultraviolet spectroscopic ellipsometry and far-infrared optical Hall-effect measurements are applied to conclude on successful p-type doping of InN films. A representative set of In-polar Mg-doped InN films with Mg concentrations ranging from 1.2×1016 cm−3 to 3.9×1021 cm−3 is investigated. The data are compared and discussed in dependence of the Mg concentration. Differences between n-type and p-type conducting samples are identified and explained. p-type conductivity in the Mg concentration range between 1.1×1018 cm−3 and 2.9×1019 cm−3 is indicated by the appearance of a dip structure in the infrared spectral region related to a loss in reflectivity of p-polarized light as a consequence of reduced LO phonon plasmon coupling, by vanishing free-charge carrier induced birefringence in the optical Hall-effect measurements, and by a sudden change in phonon-plasmon broadening behavior despite continuous change in the Mg concentration. By modeling the near-infrared-to-vacuum-ultraviolet ellip...

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22±0.01)m0 at 1.5 K to (0.36±0.03)m0 at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.

Effect of nitrogen on the GaAs0.9−xNxSb0.1 dielectric function from the near-infrared to the ultraviolet

We study the effect of nitrogen on the GaAs0.9−xNxSb0.1 (x=0.00, 0.65%, 1.06%, 1.45%, and 1.90%) alloy dielectric function by spectroscopic ellipsometry in the energy range from 0.73 to 4.75 eV. The compositional dependences of the critical points energies for the GaAs0.9−xNxSb0.1 are obtained. In addition to the GaAs intrinsic transitions E1, E1+Δ1, and E0′, the nitrogen-induced Γ-point optical transitions E0 and E+, together with a third transition E#, are identified. We find that with increasing the N content, the E0 transition shifts to lower energies while the E+ and E# transitions shift to higher energies. We suggest that the origin of the E0, E+, and E# transitions may be explained by the double band anticrossing (BAC) model, consisting of a conduction BAC model and a valence BAC model.

Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure

In this work we demonstrate by photoluminescence studies white light emission from a monolithic InGaN/GaN single quantum well structure grown by metal organic chemical vapour deposition. As-grown and thermally annealed samples at high temperature (1000 °C, 1100 °C and 1200 °C) and high pressure (1.1 GPa) were analysed by spectroscopic techniques, and the annealing effect on the photoluminescence is deeply explored. Under laser excitation of 3.8 eV at room temperature, the as-grown structure exhibits two main emission bands: a yellow band peaked at 2.14 eV and a blue band peaked at 2.8 eV resulting in white light perception. Interestingly, the stability of the white light is preserved after annealing at the lowest temperature (1000 °C), but suppressed for higher temperatures due to a deterioration of the blue quantum well emission. Moreover, the control of the yellow/blue bands intensity ratio, responsible for the white colour coordinate temperatures, could be achieved after annealing at 1000 °C. The room temperature white emission is studied as a function of incident power density, and the correlated colour temperature values are found to be in the warm white range: 3260–4000 K.

Effect of Mg doping on the structural and free-charge carrier properties of InN films

We study the structural and free-charge carrier properties of two sets of InN films grown by molecular beam epitaxy doped with different Mg concentrations from 1x1018 cm-3 to 3.9x1021 cm-3. We dete ...

Spectroscopic analysis of LYSO:Ce crystals

Rare earth orthosilicates are among the most widely used scintillator materials in the last decades. Particularly, lutetium-yttrium oxyorthosilicate (LYSO) is known to exhibit great potentialities in the field of radiation detectors for medical imaging. Consequently, an in-depth knowledge of the material properties is of utmost interest for the mentioned applications. In this work the spectroscopic properties of commercial cerium doped lutetium-yttrium oxyorthosilicate crystals (LYSO:Ce) were investigated by Raman spectroscopy, steady state photoluminescence, photoluminescence excitation and time resolved photoluminescence. Site selective excitation was used under steady state (325nm) and pulsed (266nm) conditions to separately investigate the temperature dependence of the 5d→4f Ce1 and Ce2 luminescence, allowing to establish the thermal quenching dependence of the Ce2 optical center. In the case of the Ce1 optical center, a luminescence quantum efficiency of 78% was obtained from 14K to room temperature with 266nm photon excitation.

Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure

In this work, the effects of Si doping in GaAs nanowires (NWs) grown on GaAs (111)B by molecular beam epitaxy with different Si doping levels (nominal free carrier concentrations of 1 × 1016, 8 × 1016, 1 × 1018 and 5 × 1018 cm-3) are deeply investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), grazing incidence X-ray diffraction (GID), photoluminescence (PL) and cathadoluminescence (CL). TEM results reveal a mixture of wurtzite (WZ) and zinc-blende (ZB) segments along the NW axis independently of the Si doping levels. GID measurements suggest a slight increase of the ZB fraction with the Si doping. Low temperature PL and CL spectra exhibit sharp lines in the energy range 1.41-1.48 eV, for the samples with lower Si doping levels. However, the emission intensity increases and is accompanied by a clear broadening of the observed lines for the samples with higher Si doping levels. The staggered type-II band alignment only determines the optical properties of the lower doping levels in GaAs:Si NWs. For the higher Si doping levels, the electronic energy level structure of the NWs is determined by electrostatic fluctuating potentials intimately related to the amphoteric behavior of the Si dopant in GaAs. For the heavily doped NWs, the estimated depth of the potential wells is ∼96-117 meV. Our results reveal that the occurrence of the fluctuating potentials is not dependent on the crystalline phase and shows that the limitation imposed by the polytypism can be overcome.

Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers

AlxGa1-xN samples, with different AlN molar fractions, x = 0, 0.15, 0.77, and 1, grown by halide vapor phase epitaxy were implanted with Tm ions. Photoluminescence (PL) measurements revealed that after thermal annealing all the samples exhibit intraionic Tm3+ luminescence. In samples with x > 0, the low temperature emission is dominated by the lines that appear in the near infrared (NIR) spectral region, corresponding to the overlapped 1G4 → 3H5 and 3H4 → 3H6 multiplet transitions. A detailed spectroscopic analysis of NIR emission of the thulium implanted and annealed AlxGa1-xN layers is presented by using temperature dependent steady-state PL, room temperature PL excitation, and time resolved PL. The results indicate that the excitonic features sensitive to the alloy disorder are involved in the excitation population processes of the Tm3+ luminescence and the highest thermal stability for the NIR emission occurs for the AlN:Tm sample.

Defect luminescence in oxides nanocrystals grown by laser assisted techniques

Wide band gap oxides, such as ZnO, SnO2 and ZrO2, are functional materials with a wide range of applications in several important technological areas such as those including lighting, transparent electronics, sensors, catalysis and biolabeling. Recently, doping and co-doping of oxides with lanthanides have attracted a strong interest for lighting purposes, especially among them nanophosphors for bioassays. Tailoring the crystalline materials physical properties for such applications often requires a well-controlled incorporation of dopants in the material lattice and a comprehensive understanding of their role in the oxides matrices. These undoped or intentionally doped oxides have band gap energies exceeding 3.3 eV at room temperature and are known to exhibit optically active centers that span from the ultraviolet to the near infrared region. Typically, by using photon energy excitation above the materials band gap, high quality undoped materials display narrow emission lines near the band edge due to free and bound-exciton recombination, as well as shallow donor-acceptor recombination pairs. Additionally, broad emission bands are often observed in these wide band gap hosts, hampering some of the desired physical properties for further applications. Recognizing and understanding the role of the dopant-related defects when deliberately introduced in the oxide hosts, as well as their influence on the samples luminescence properties, constitutes a matter of exploitation by the scientific community worldwide. In this work, we investigate the luminescence properties of undoped and lanthanide doped oxide materials grown by laser assisted techniques. Laser assisted flow deposition (LAFD) and pulse laser ablation in liquids (PLAL) were used for the growth of ZnO, SnO2 and yttria stabilized ZrO2 (YSZ) micro and nanocrystals with different morphologies, respectively. Regarding the YSZ host, trivalent lanthanide ions were optically activated by in-situ doping and co-doping. The influence of the defect energy states on the optical properties of the different undoped and doped metal oxide hosts is investigated under ultraviolet and infrared excitation by means of photoluminescence and photoluminescence excitation.