M. R. Scholz

Giant Rashba splitting in graphene due to hybridization with gold

Graphene in spintronics is predominantly considered for spin current leads of high performance due to weak intrinsic spin-orbit coupling of the graphene π electrons. Externally induced large spin-orbit coupling opens the possibility of using graphene in active elements of spintronic devices such as the Das-Datta spin field-effect transistor. Here we show that Au intercalation at the graphene-Ni interface creates a giant spin-orbit splitting (~100 meV) of the graphene Dirac cone up to the Fermi energy. Photoelectron spectroscopy reveals the hybridization with Au 5d states as the source for this giant splitting. An ab initio model of the system shows a Rashba-split spectrum around the Dirac point of graphene. A sharp graphene-Au interface at the equilibrium distance accounts for only ~10 meV spin-orbit splitting and enhancement is due to the Au atoms in the hollow position that get closer to graphene and do not break the sublattice symmetry.Graphene in spintronics [1] has so far primarily meant spin current leads of high performance because the intrinsic spin-orbit coupling of its π electrons is very weak [2–4]. If a large spin-orbit coupling could be created by a proximity effect, the material could also form active elements of a spintronic device such as the Das-Datta spin field-effect transistor [5], however, metal interfaces often compromise the band dispersion of massless Dirac fermions [6]. Our measurements show that Au intercalation at the graphene-Ni interface creates a giant spin-orbit splitting (∼ 100 meV) in the graphene Dirac cone up to the Fermi energy. Photoelectron spectroscopy reveals hybridization with Au5d states as the source for the giant spin-orbit splitting. An ab initio model of the system shows a Rashba-split dispersion with the analytically predicted gapless band topology around the Dirac point of graphene and indicates that a sharp graphene-Au interface at equilibrium distance will account for only ∼ 10 meV spin-orbit splitting. The ab initio calculations suggest an enhancement due to Au atoms that get closer to the graphene and do not violate the sublattice symmetry.

Tolerance of topological surface states towards magnetic moments: Fe on Bi2Se3.

We study the effect of Fe impurities deposited on the surface of the topological insulator Bi(2)Se(3) by means of core-level and angle-resolved photoelectron spectroscopy. The topological surface state reveals surface electron doping when the Fe is deposited at room temperature and hole doping with increased linearity when deposited at low temperature (~8 K). We show that in both cases the surface state remains intact and gapless, in contradiction to current belief. Our results suggest that the surface state can very well exist at functional interfaces with ferromagnets in future devices.

Ir(111) surface state with giant Rashba splitting persists under graphene in air.

Spin currents which allow for a dissipationless transport of information can be generated by electric fields in semiconductor heterostructures in the presence of a Rashbatype spin-orbit coupling. The largest Rashba effects occur for electronic surface states of metals but these cannot exist but under ultrahigh vacuum conditions. Here, we reveal a giant Rashba effect (αR ≈ 1.5 · 10 −10 eVm) on a surface state of Ir(111). We demonstrate that its spin splitting and spin polarization remain unaffected when Ir is covered with graphene. The graphene protection is, in turn, sufficient for the spinsplit surface state to survive in ambient atmosphere. We discuss this result along with evidences for a topological protection of the surface state.

Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water

The long-term stability of functional properties of topological insulator materials is crucial for the operation of future topological insulator based devices. Water and oxygen have been reported to be the main sources of surface deterioration by chemical reactions. In the present work, we investigate the behavior of the topological surface states on Bi2X3 (X = Se, Te) by valence-band and core level photoemission in a wide range of water and oxygen pressures both in situ (from 10(-8) to 0.1 mbar) and ex situ (at 1 bar). We find that no chemical reactions occur in pure oxygen and in pure water. Water itself does not chemically react with both Bi2Se3 and Bi2Te3 surfaces and only leads to slight p-doping. In dry air, the oxidation of the Bi2Te3 surface occurs on the time scale of months, in the case of Bi2Se3 surface of cleaved crystal, not even on the time scale of years. The presence of water, however, promotes the oxidation in air, and we suggest the underlying reactions supported by density functional calculations. All in all, the surface reactivity is found to be negligible, which allows expanding the acceptable ranges of conditions for preparation, handling and operation of future Bi2X3-based devices.

Anisotropic effect of warping on the lifetime broadening of topological surface states in angle-resolved photoemission from Bi2 Te3

We analyze the strong hexagonal warping of the Dirac cone of Bi2Te 3 by angle-resolved photoemission. AlongM, the dispersion deviates from a linear behavior meaning that the Dirac cone is warped outwards and not inwards. We show that this introduces an anisotropy in the lifetime broadening of the topological surface state which is larger alongK. The result is not consistent with an explanation by nesting properties. Based on the theoretically predicted modifications of the ground-state spin texture of a strongly warped Dirac cone, we propose spin-dependent scattering processes as explanation for the anisotropic scattering rates. These results could help paving the way for optimizing future spintronic devices using topological insulators and controlling surface-scattering processes via external gate voltages.