M.T. Hessmann

Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Micro-Raman spectroscopy has been used to investigate the acceptor distribution in highly p-doped silicon. As an example, the dopant distribution in crystalline thin-film layers, as developed for solar cells, was mapped. The method is based on the analysis of the Fano-type Raman peak shape which is caused by free charge carriers. For calibration of the Raman acceptor measurements (excitation at a wavelength of 532 nm), we used mono-crystalline reference samples whose acceptor concentration was determined by electrochemical capacitance voltage. We find a significant influence of light induced free charge carriers on the peak shape which results from typical Raman excitation. Thus, the selection of a suitable intensity is important to avoid a too low signal-to-noise ratio on the one hand and systematic errors due to light induced carriers on the other hand. Different evaluation methods, i.e., peak asymmetry versus peak width analysis, are compared in respect to interference caused by random noise of the spe...

Material Properties of Laser-Welded Thin Silicon Foils

An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1) laser spot welding with low constant feed speed, (2) laser line welding, and (3) keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD) to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.