Silke Christiansen

Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells

We show that the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) can successfully be applied as a hole selective front contact in silicon heterojunction (SHJ) solar cells. In combination with a superior electron selective heterojunction back contact based on amorphous silicon (a-Si), mono-crystalline n-type silicon (c-Si) solar cells reach power conversion efficiencies up to 14.8% and high open-circuit voltages exceeding 660u2009mV. Since in the PEDOT:PSS/c-Si/a-Si solar cell the inferior hybrid junction is determining the electrical device performance we are capable of assessing the recombination velocity (vI) at the PEDOT:PSS/c-Si interface. An estimated vI of ~400u2009cm/s demonstrates, that while PEDOT:PSS shows an excellent selectivity on n-type c-Si, the passivation quality provided by the formation of a native oxide at the c-Si surface restricts the performance of the hybrid junction. Furthermore, by comparing the measured external quantum efficiency with optical simulations, we quantify the losses due to parasitic absorption of PEDOT:PSS and reflection of the device layer stack. By pointing out ways to better passivate the hybrid interface and to increase the photocurrent we discuss the full potential of PEDOT:PSS as a front contact in SHJ solar cells.

Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures

While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.

The Formation of Calcified Nanospherites during Micropetrosis Represents a Unique Mineralization Mechanism in Aged Human Bone

Osteocytes-the central regulators of bone remodeling-are enclosed in a network of microcavities (lacunae) and nanocanals (canaliculi) pervading the mineralized bone. In a hitherto obscure process related to aging and disease, local plugs in the lacuno-canalicular network disrupt cellular communication and impede bone homeostasis. By utilizing a suite of high-resolution imaging and physics-based techniques, it is shown here that the local plugs develop by accumulation and fusion of calcified nanospherites in lacunae and canaliculi (micropetrosis). Two distinctive nanospherites phenotypes are found to originate from different osteocytic elements. A substantial deviation in the spherites composition in comparison to mineralized bone further suggests a mineralization process unlike regular bone mineralization. Clearly, mineralization of osteocyte lacunae qualifies as a strong marker for degrading bone material quality in skeletal aging. The understanding of micropetrosis may guide future therapeutics toward preserving osteocyte viability to maintain mechanical competence and fracture resistance of bone in elderly individuals.

Plasmonic gold helices for the visible range fabricated by oxygen plasma purification of electron beam induced deposits

Electron beam induced deposition (EBID) currently provides the only direct writing technique for truly three-dimensional nanostructures with geometrical features below 50 nm. Unfortunately, the depositions from metal-organic precursors suffer from a substantial carbon content. This hinders many applications, especially in plasmonics where the metallic nature of the geometric surfaces is mandatory. To overcome this problem a post-deposition treatment with oxygen plasma at room temperature was investigated for the purification of gold containing EBID structures. Upon plasma treatment, the structures experience a shrinkage in diameter of about 18 nm but entirely keep their initial shape. The proposed purification step results in a core-shell structure with the core consisting of mainly unaffected EBID material and a gold shell of about 20 nm in thickness. These purified structures are plasmonically active in the visible wavelength range as shown by dark field optical microscopy on helical nanostructures. Most notably, electromagnetic modeling of the corresponding scattering spectra verified that the thickness and quality of the resulting gold shell ensures an optical response equal to that of pure gold nanostructures.

From Micro– to Macro–Raman Spectroscopy: Solar Silicon for a Case Study

The phenomenon of inelastic scattering of light by matter is referred as Raman spectroscopy named after Sir Chandrasekhara Venkata Raman who first observed it experimentally in 1928 [1]. Because only one photon out of 106-1012 incident photons is inelastically or Raman scattered, it took some time until lasers with high enough light intensities for efficient Raman excitation and very sensitive detectors for measuring the still low intensity Raman light were developed. Another important step in advancing Raman instrumentation was the efficient rejection of the very intense elastic scattered light, known as Rayleigh light, through a double or triple monochromator or filters [2].

Hybrid Silicon Nanowires: From Basic Research to Applied Nanotechnology

Silicon nanowires (SiNWs) have attracted particular attention in nanotechnology applica‐ tions due to their unique advantages with respect to electrical, optical and thermoelec‐ tric properties compared to the planar thin films [1-3]. SiNWs show strong absorption of visible light in thin layers, which makes them attractive for the use in novel thin film concepts as in photovoltaics [4]. Like all the one-dimensional (1D) nanostructures, SiNWs have a large surface to volume ratio and thus surface-dominated properties that can be tuned, e.g. by suitable surface functionalization to be applied in sensitive sensors [5, 6]. Surface functionalization affects the overall electrical properties of SiNWs as dop‐ ants surface concentration, surface recombination rate, density of surface states, etc.[2, 7-10]. Atop Silicon atoms on SiNW surfaces can be terminated with a wide variety of molecules bearing covalent interfacial bonds i.e. Si-C [2, 7-10], Si-N [11] and Si-O [12]. Up to now we essentially exploited the Si-C bonds that permit a thorough control of the SiNW surface yielding a strongly reduced tendency to the undesirable oxidation of the SiNWs [2]. With such surface functionalization methods at hand, control and prediction of the electrical transport properties have become so viable that functionalized SiNWs can be considered as auspicious nanoscale building blocks in future high-performance nano-devices in the areas of electronics, opto-electronics, photovoltaics and sensing [13-18]. In this chapter we present a chemically-based surface functionalization method

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the devices active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 [Formula: see text] alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments-chemical etching and alumina deposition-reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Development of an optimal filter substrate for the identification of small microplastic particles in food by micro-Raman spectroscopy

AbstractWhen analysing microplastics in food, due to toxicological reasons it is important to achieve clear identification of particles down to a size of at least 1xa0μm. One reliable, optical analytical technique allowing this is micro-Raman spectroscopy. After isolation of particles via filtration, analysis is typically performed directly on the filter surface. In order to obtain high qualitative Raman spectra, the material of the membrane filters should not show any interference in terms of background and Raman signals during spectrum acquisition. To facilitate the usage of automatic particle detection, membrane filters should also show specific optical properties. In this work, beside eight different, commercially available membrane filters, three newly designed metal-coated polycarbonate membrane filters were tested to fulfil these requirements. We found that aluminium-coated polycarbonate membrane filters had ideal characteristics as a substrate for micro-Raman spectroscopy. Its spectrum shows no or minimal interference with particle spectra, depending on the laser wavelength. Furthermore, automatic particle detection can be applied when analysing the filter surface under dark-field illumination. With this new membrane filter, analytics free of interference of microplastics down to a size of 1xa0μm becomes possible. Thus, an important size class of these contaminants can now be visualized and spectrally identified.n Graphical abstractA newly developed aluminium coated polycarbonate membrane filter enables automatic particle detection and generation of high qualitative Raman spectra allowing identification of small microplastics

Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods

Vertical oriented GaN microrods were grown by metal-organic vapor phase epitaxy with four different n-type carrier concentration sections above 1019 cm−3 along the c-axis. In cathodoluminescence investigations carried out on each section of the microrod, whispering gallery modes can be observed due to the hexagonal symmetry. Comparisons of the spectral positions of the modes from each section show the presence of an energy dependent mode shift, which suggest a carrier-induced refractive index change. The shift of the high energy edge of the near band edge emission points out that the band gap parameter in the analytical expression of the refractive index has to be modified. A proper adjustment of the band gap parameter explains the observed whispering gallery mode shift.

Mode Matching for Optical Antennas

The emission rate of a point dipole can be strongly increased in the presence of a well-designed optical antenna. Yet, optical antenna design is largely based on radio-frequency rules, ignoring, e.g., Ohmic losses and non-negligible field penetration in metals at optical frequencies. Here, we combine reciprocity and Poyntings theorem to derive a set of optical-frequency antenna design rules for benchmarking and optimizing the performance of optical antennas driven by single quantum emitters. Based on these findings a novel plasmonic cavity antenna design is presented exhibiting a considerably improved performance compared to a reference two-wire antenna. Our work will be useful for the design of high-performance optical antennas and nanoresonators for diverse applications ranging from quantum optics to antenna-enhanced single-emitter spectroscopy and sensing.