M. Takizawa

Thickness-dependent electronic structure of ultrathin SrRuO3 films studied by in situ photoemission spectroscopy

In situ thickness-dependent photoemission spectroscopy (PES) has been performed on SrRuO3 (SRO) layers deposited on SrTiO3 substrates to study the structure-induced evolution of the electronic structure. The PES spectra showing the existence of two critical film thicknesses reveal that a metal-insulator transition occurs at a film thickness of 4–5 monolayers (ML) and the evolution of Ru 4d-derived states around the Fermi level (EF) saturates at about 15 ML. The observed spectral behavior well matches the electric and magnetic properties and thickness-dependent evolution of surface morphology of the ultrathin SRO films. These experimental results suggest the importance of the disorder associated with the unique growth-mode transition in SRO films.

Chemical potential shift and spectral-weight transfer in Pr1- xCaxMnO3 revealed by photoemission spectroscopy

We have studied the chemical potential shift and changes in the electronic density of states near the Fermi level (

Manifestation of correlation effects in the photoemission spectra of Ca1-xSrxRuO3

E_F

Valence changes associated with the metal-insulator transition in Bi1-xLaxNiO3

) as a function of carrier concentration in Pr

Temperature-dependent soft X-ray photoemission and absorption studies of charge disproportionation in La1-xSrxFeO3

_{1-x}

Strong localization of doped holes in La1-x Srx FeO3 from angle-resolved photoemission spectra

Ca

Thickness-dependent magnetic properties and strain-induced orbital magnetic moment inSrRuO3thin films

_x

Photoemission and x-ray absorption studies of valence states in (Ni,Zn, Fe,Ti)3O4 thin films exhibiting photoinduced magnetization

MnO

Photoemission study of TiO2/VO2 interfaces

_3

Chemical potential jump between the hole-doped and electron-doped sides of ambipolar high-Tc cuprate superconductors

(PCMO,