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Featured researches published by M. Tomak.


Journal of Physics D | 2008

Excitonic effects on the nonlinear optical properties of small quantum dots

İbrahim Karabulut; Haluk Şafak; M. Tomak

The excitonic effects on the nonlinear optical properties of small quantum dots with a semiparabolic confining potential are studied under the density matrix formalism. First, within the framework of the strong confinement approximation, we present the excitonic states and then calculate the excitonic effects on the nonlinear optical properties, such as second harmonic generation, third harmonic generation, nonlinear absorption coefficient and refractive index changes. We find the explicit analytical expressions between the corresponding nonlinear optical properties with and without considering the excitonic effects. It is seen that these analytical expressions are related only to ratios of the effective masses of electron and hole. These explicit expressions indicate that the excitonic effects on the corresponding nonlinear optical properties become more important with increasing orders of the optical susceptibilities. In addition, we suggest a scaling rule for the nth-order susceptibility as γ(n+1)/2. The effect of the confining potential frequency on the corresponding nonlinear optical properties is also studied. Our results show a remarkable dependence of nonlinear optical properties on both the excitonic effects and the confining potential frequency.


Physica E-low-dimensional Systems & Nanostructures | 2005

A parabolic quantum dot with N electrons and an impurity

Berna Gülveren; Ülfet Atav; Mehmet Şahin; M. Tomak

The two dimensional Thomas-Fermi approximation is applied to the problem of parabolic quantum dot composed of N electrons and an on-center impurity. Change induced by impurity on electron density, chemical potential and total energy is discussed and it is found that existence of impurity makes significant changes on the determination of above properties especially for the small number of electrons and strong confinements.


Journal of Physics and Chemistry of Solids | 1991

PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM WELLS

Mohammad K. Elsaid; M. Tomak

Abstract The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga1−xAlx As quantum well as a function of well width. The effect of a magnetic field is also considered.


Journal of Applied Physics | 2006

Intensity-dependent refractive index of a Pöschl-Teller quantum well

Hasan Yıldırım; M. Tomak

The linear and nonlinear changes in the refractive index of a Poschl-Teller quantum well are studied. The Poschl-Teller potential can easily become asymmetric by a correct choice of its parameter set. We use this feature to investigate the intensity-dependent refractive index of a GaAs quantum well within the density matrix formalism. Numerical results reveal large values of linear and nonlinear changes in the refractive index.


Solid State Communications | 1992

Photoionization of impurities in quantum wells

Mohammad K. Elsaid; M. Tomak

The dependence of photoionization cross-section on photon energy is calculated for shallow donors in quantum wells. The resulting spectra is completely different for light polarized along and perpendicular to the growth direction.


Applied Physics Letters | 2010

Bismuth doping of graphene

Olcay Üzengi Aktürk; M. Tomak

In this work, we have studied bismuth as a dopant in graphene using density functional theory (DFT). We find that bismuth is weakly physisorbed within DFT. On the other hand, we show that bismuth n-dopes graphene when it is substitutional. We observe that local density approximation results give higher substitutional energy than that of generalized gradient approximation. The electronic structure of graphene is changed when Bi is substitutional.


Modelling and Simulation in Materials Science and Engineering | 2005

Thermal and mechanical properties of Cu–Au intermetallic alloys

H H Kart; M. Tomak; Tahir Cagin

The thermal and mechanical properties of Cu, Au pure metals and their ordered intermetallic alloys of Cu3Au(L12), CuAu(L10) and CuAu3(L12) are studied by using the molecular dynamics simulation. The effects of temperature and concentration on the physical properties of CuxAu1−x are analysed. Sutton–Chen (SC) and quantum Sutton–Chen (Q-SC) many-body potentials are used. The simulation results such as cohesive energy, density, elastic constants, bulk modulus, heat capacity, thermal expansion, melting points and phonon dispersion curves are in good agreement with the available experimental data at the various temperatures. Q-SC potential parameter results are usually closer to experimental values than the ones predicted from SC potential parameters.


International Journal of Modern Physics C | 2005

QUANTUM GENETIC ALGORITHM METHOD IN SELF-CONSISTENT ELECTRONIC STRUCTURE CALCULATIONS OF A QUANTUM DOT WITH MANY ELECTRONS

Mehmet Şahin; Ülfet Atav; M. Tomak

In this study, we have calculated energy levels of an N-electron quantum dot. For this purpose, we have used two different techniques, matrix diagonalization and quantum genetic algorithm, to obtain simultaneous solutions of the coupled Schrodinger and Poisson equation in the Hartree approximation. We have determined single particle energy levels, total energy, chemical potential and capacitive energy. We have also compared the results, demonstrated the applicability of QGA to many-electron quantum systems and evaluated its effectiveness.


Physica Status Solidi B-basic Solid State Physics | 1997

Shallow Donors in a Quantum Well Wire: Electric Field and Geometrical Effects

M. Ulaş; H. Akbas; M. Tomak

Subband and shallow donor binding energies are calculated. The emphasis is given on the electric field effects for wires of different shapes. It is shown that the donor binding energy is sensitive to the interplay of the electric field and geometrical effects.


Solid State Communications | 1985

Polaron effects on the energy levels of hydrogenic impurities in GaAs/Ga1−xAlxAs quantum well structures

A. Erçelebi; M. Tomak

Abstract The effect of electron phonon-coupling on the binding energies of impurities in GaAs/Ga1−χAlχAs quantum well structures is calculated. The correction becomes sizeable as the electron gets more deeply bound.

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Hasan Yıldırım

Middle East Technical University

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Murat Tas

Middle East Technical University

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Olcay Üzengi Aktürk

Middle East Technical University

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S. Turgut

Middle East Technical University

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