Mahmoud M. Asmar

Rashba Spin Orbit Interaction and Birefringent Electron Optics in Graphene

Electron optics exploits the analogies between rays in geometrical optics and electron trajectories, leading to interesting insights and potential applications. Graphene, with its two-dimensionality and photon-like behavior of its charge carriers, is the perfect candidate for the exploitation of electron optics. We show that a circular gate-controlled region in the presence of Rashba spin-orbit interaction in graphene may indeed behave as a Veselago electronic lens but with two different indices of refraction. We demonstrate that this birefringence results in complex caustics patterns for a circular gate, selective focusing of different spins, and the possible direct measurement of the Rashba coupling strength in scanning probe experiments.

Emergence of photoswitchable states in a graphene-azobenzene-Au platform.

The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in unpatterned graphene, but quasibound states can occur for potentials with closed integrable dynamics. Here, we report the observation of resonance states in photoswitchable self-assembled molecular(SAM)-graphene hybrid. Conductive AFM measurements performed at room temperature reveal strong current resonances, the strength of which can be reversibly gated on- and off- by optically switching the molecular conformation of the mSAM. Comparisons of the voltage separation between current resonances (∼ 70-120 mV) with solutions of the Dirac equation indicate that the radius of the gating potential is ∼ 7 ± 2 nm with a strength ≥ 0.5 eV. Our results and methods might provide a route toward optically programmable carrier dynamics and transport in graphene nanomaterials.

Spin-orbit interaction and isotropic electronic transport in graphene.

Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio (≃2) of the transport to elastic times for massless electrons signals the anisotropy of the scattering. We show that SOIs lead to a drastic decrease of this ratio, especially at low carrier concentrations, while the scattering becomes increasingly isotropic. As the strength of the SOI determines the energy (carrier concentration) where this drop is more evident, this effect could help evaluate these interactions through transport measurements in graphene systems with enhanced spin-orbit coupling.

Mass inversion in graphene by proximity to dichalcogenide monolayer

Proximity effects resulting from depositing a graphene layer on a TMD substrate layer change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. An effective Hamiltonian that describes different symmetry breaking terms in graphene, while preserving time reversal invariance, shows that an inverted mass band gap regime is possible. The competition of different perturbation terms causes a transition from an inverted mass phase to a staggered gap in the bilayer heterostructure, as seen in its phase diagram. A tight-binding calculation of the bilayer validates the effective model parameters. A relative gate voltage between the layers may produce such phase transition in experimentally accessible systems. The phases are characterized in terms of Berry curvature and valley Chern numbers, demonstrating that the system may exhibit quantum spin Hall and valley Hall effects.

Symmetry-breaking effects on spin and electronic transport in graphene

The decoration of graphene samples with adatoms or nanoparticles leads to the enhancement of spin-orbit interactions as well as to the introduction of symmetry-breaking effects that could have drastic effects on spin and electronic transport phenomena. We present an analysis based on symmetry considerations and examine the impact on the scattering matrix for graphene systems containing defects that enhance spin-orbit interactions, while conserving the electronic total angular momentum. We show that the appearance and dominance of skew scattering, and the related observation of valley and/or spin Hall effect in decorated graphene samples, suggests the set of symmetries that adatom perturbations should satisfy. We further show that detailed measurements of the transport and elastic times as a function of carrier concentration make it possible to not only extract the strength of the spin-orbit interaction, as suggested before, but also obtain the amplitude of the symmetry-breaking terms introduced. To examine how different terms would affect measurements, we also present calculations for typical random distributions of impurities with different perturbations, illustrating the detailed energy dependence of different observables

Minimal geometry for valley filtering in graphene

The possibility to effect valley splitting of an electronic current in graphene represents the essential component in the new field of valleytronics in such two-dimensional materials. Based on a symmetry analysis of the scattering matrix, we show that if the spatial distribution of multiple potential scatterers breaks mirror symmetry about the axis of incoming electrons, then a splitting of the current between two valleys is observed. This leads to the appearance of the valley Hall effect. We illustrate the effect of mirror symmetry breaking in a minimal system of two symmetric impurities, demonstrating the splitting between valleys via the differential cross sections and non-vanishing skew parameter. We further discuss the role that these effects may play in transport experiments.

Interface symmetry and spin control in topological-insulator–semiconductor heterostructures

Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface states appearing at the planar boundary between a topologically-trivial semiconductor (SE) and a TI are controlled by the symmetry of the interface. In contrast to the well-studied helical Dirac surface states, SE-TI interface states exhibit elliptical contours of constant energy and complex spin textures with broken helicity. We derive a general effective Hamiltonian for SE-TI junctions, and propose experimental signatures such as an out of plane spin accumulation under a transport current and the opening of a spectral gap that depends on the direction of an applied in-plane magnetic field.