Mahmoud Ossaimee

Scaling issues for p-i-n carbon nanotube FETs: A computational study

Scaling study of p-i-n carbon nanotube field effect transistors (CNTFETs) is presented through numerical simulations based on a quantum-mechanical simulator. This simulator is based on a self-consistent solution of Poissons equation and the carrier transport equation. Finite element method is used for solving Poissons equation while the non-equilibrium Greens function (NEGF) formalism is used to model the carrier transport. The developed simulator is used to investigate the effects of the device parameters on the device performance.

Electron mobility in gate all around cylindrical silicon nanowires: A Monte Carlo study

Electron mobility in gated silicon nanowires is calculated using a Monte Carlo simulation that considers phonon and surface roughness scattering. Surface roughness scattering rates are calculated using Andos model. The eigenenergies and eigenfunctions required for scattering rate calculation are determined by self-consistent solution of the Schrödinger and Poisson equations. The effects of size quantization and transverse electric field on electron mobility are presented and discussed.

A simple treatment of quantum dissipative transport in carbon nanotube transistors

In this paper, we extend our simulation model for the ballistic transport in carbon nanotube field effect transistors (CNTFETs) to include carrier scattering and dissipative transport. A simplified quantum dissipative model is proposed based on the concept of Buttiker probes within the non-equilibrium Greens function (NEGF) formalism. We display a few of the simulation results and compare them with the ballistic transport case and with the results from more rigorous quantum models based on acoustic and optical phonon scattering models.