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Dive into the research topics where Makoto Iida is active.

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Featured researches published by Makoto Iida.


Journal of Crystal Growth | 1997

Relationship between grown-in defects and thermal history during CZ Si crystal growth

Kiyotaka Takano; Makoto Iida; Eiichi Iino; Masanori Kimura; Hirotoshi Yamagishi

Abstract An abrupt change of the crystal growth rate at temperatures in the range 1150–1080°C affects the annihilation or the agglomeration of grown-in defects such as flow pattern defects (FPD), crystal originated particles (COP), laser scattering defects (LSTD) and the defects measured by an optical precipitate profiler (OPPDs). Moreover, it is demonstrated that the densities of FPDs and LSTDs correlate with each other, and also with the cooling rate in such a temperature range. These relationships were investigated by growing several silicon single crystals in 10 kinds of hot-zone (HZ) configurations designed by using a numerical simulation. The cooling rate from 1412°C, the melting point of silicon, to 1150°C does not seem to be so important for the generation or the annihilation of these defects.


Archive | 1998

Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same

Makoto Iida; Eiichi Iino; Masanori Kimura; Shozo Muraoka; Hideki Yamanaka


Archive | 1999

Nitrogen doped single crystal silicon wafer with few defects and method for its production

Makoto Iida; Masanori Kimura; Shozo Muraoka; Masaro Tamatsuka


Archive | 1999

Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it

Makoto Iida; Masaro Tamatsuka; Masanori Kimura; Shozo Muraoka


Archive | 1999

Silicon single crystal wafer and method for producing silicon single crystal wafer

Masaro Tamatsuka; Akihiro Kimura; Katsuhiko Miki; Makoto Iida


Archive | 1997

Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same

Kiyotaka Takano; Makoto Iida; Eiichi Iino; Masanori Kimura; Hirotoshi Yamagishi


Archive | 1996

Silicon single crystal having no crystal defect in circumference of water and its production

Makoto Iida; Eiichi Iino; Masaki Kimura; Kiyotaka Takano; Hirotoshi Yamagishi; 浩利 山岸; 雅規 木村; 誠 飯田; 栄一 飯野; 清隆 高野


Archive | 2001

Silicon wafer, silicon epitaxial wafer, anneal wafer and method for producing them

Makoto Iida; Masanori Kimura


Archive | 1997

Production of silicon single crystal having low crystal defect and silicon single crystal wafer produced therewith

Makoto Iida; Eiichi Iino; Masaki Kimura; Shozo Muraoka; Satoshi Suzuki; 雅規 木村; 正三 村岡; 聡 鈴木; 誠 飯田; 栄一 飯野


Archive | 2000

Silicon single crystal wafer and production method thereof and soi wafer

Makoto Iida; Masanori Kimura

Collaboration


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Masanori Kimura

East Tennessee State University

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Shozo Muraoka

East Tennessee State University

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Eiichi Iino

East Tennessee State University

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Masaro Tamatsuka

East Tennessee State University

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Hirotoshi Yamagishi

East Tennessee State University

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Kiyotaka Takano

East Tennessee State University

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Akihiro Kimura

East Tennessee State University

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Masahiro Sakurada

East Tennessee State University

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Takatoshi Nagoya

East Tennessee State University

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Yoshinori Hayamizu

East Tennessee State University

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