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Makoto Segawa

Toshiba

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Publication

Featured researches published by Makoto Segawa.

international solid-state circuits conference | 1986

A 18ns 8KW × 9b NMOS RAM

Makoto Segawa; Shoji Ariizumi; Y. Suzuki; T. Kondo; T. Ando; K. Ochii; F. Masuoka

An 8K×9 NMOS SRAM using a shared-word line and one-eighth activated row decoder circuit, achieving 18ns access times and 500mW active power dissipation, will be reported. The SRAM was fabricated in 1.5μm double-poly, double-metal process.

Archive | 1984

Redundancy circuit for a semiconductor memory device

Makoto Segawa; Shoji Ariizumi

Archive | 1984

Static memory having load polysilicon resistors formed over driver FET drains

Shoji Ariizumi; Makoto Segawa

Archive | 1981

MOS Transistor circuit with a power-down function

Makoto Segawa; Shoji Ariizumi

Archive | 1980

MOS Static RAM layout with polysilicon resistors over FET gates

Shoji Ariizumi; Makoto Segawa

Archive | 1988

PROTECTED MOS TRANSISTOR CIRCUIT

Youichi Suzuki; Makoto Segawa; Shoji Ariizumi; Takeo Patent Division Kondo; Fujio Patent Division Masuoka

Archive | 1982

MOSFET buffer circuit with an improved bootstrapping circuit

Makoto Segawa; Shoji Ariizumi

Archive | 1991

Semiconductor memory device and its topography

Youichi Suzuki; Makoto Segawa

Archive | 1990

Semiconductor memory device with improved output to differential data lines

Kenichi Nakamura; Makoto Segawa

Archive | 1985

Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device

Shoji Ariizumi; Makoto Segawa

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Shoji Ariizumi

Toshiba

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Youichi Suzuki

Toshiba

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Kenichi Nakamura

Toshiba

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Shigeto Mizukami

Toshiba

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Yasumitsu Nozawa

Toshiba

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Yasushi Kameda

Toshiba

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Fujio Patent Division Masuoka

Toshiba

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Takayuki Harima

Toshiba

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Takeo Patent Division Kondo

Toshiba

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Akihiro Mishima

Toshiba

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